S918T
Abstract: S918TR
Text: S918T/S918TR TELEFUNKEN Semiconductors MOSMIC MOS Monolithic Integrated Circuit MOSFET–IC For TV-Tuner Prestage With 12 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications
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S918T/S918TR
S918T
D-74025
S918TR
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Untitled
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF POWER MOS FET Revision date:27th/Apr.’02 ELETROSTATIC SENSITIVE DEVICES RD30HUF1 Silicon MOSFET Power Transistor,520MHz 30 W DESCRIPTION RD30HUF1 is a MOS FET type transistor specifically designed for
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RD30HUF1
520MHz
RD30HUF1
520MHz
25deg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:27th/Apr.’02 ELETROSTATIC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor, 175MHz 30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for
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RD30HVF1
175MHz
RD30HVF1
25deg
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transistor t06
Abstract: 828 TRANSISTOR equivalent
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
48MAX
53MAX
transistor t06
828 TRANSISTOR equivalent
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RA07M4047MS
Abstract: rara RA07M4047M
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4047 RA07M4047M 07M4047MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
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RA07M4047M
RA07M4047MSA
07M4047
400-470MHz
RA07M4047MSA
470-MHz
RA07M4047MS
rara
RA07M4047M
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GP 819
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
GP 819
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier
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806-870MHz
RA03M8087M
870-MHz
RA03M8087M
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563647 345636478 RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier
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400-470MHz
RA07N4047M
470-MHz
RA07N4047M
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456786 1234567865 345678659 RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
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378-430MHz
RA07M3843M
430-MHz
RA07M3843M
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RA07M1317MS
Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M1317 RA07M1317M 07M1317MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
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RA07M1317M
RA07M1317MSA
07M1317
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
RA07M1317M
RF TRANSISTOR 1 WATT
07M1317
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marking GG
Abstract: RA07M3843M RA07M3843M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843 RA07M3843M 07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
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RA07M3843M
07M3843
378-430MHz
RA07M3843M
430-MHz
marking GG
RA07M3843M-101
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GRM39
Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
GRM39
GRM708
diode GP 829
6030D
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566785 345667859 RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
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889-941MHz
RA03M8894M
941-MHz
RA03M8894M
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transistor t06
Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
transistor t06
RD00HHS1-101
lal04na1r0
t06 TRANSISTOR
LAL04NAR39
TRANSISTOR 7533 A
LAL04NA
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RA07M4452M
Abstract: generator 4.20 mA
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
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RA07M4452M
RA07M4452MSA
07M4452
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452M
generator 4.20 mA
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RD09MUP2
Abstract: TRANSISTOR D 1765 720 L 0619 1788
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 720
L 0619
1788
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RD20HMF1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers
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RD20HMF1
900MHz
RD20HMF1
900MHz-band
900MHz
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LAL04NA
Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
LAL04NA
RD00HHS1-101
transistor t06
DD 127 D TRANSISTOR
mosfet HF amplifier
S 170 MOSFET TRANSISTOR
MITSUBISHI RF POWER MOS FET
T06 transistor
FET 355
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RD16HHF1
Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
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RD16HHF1
30MHz
RD16HHF1
30MHz
RD 15 hf mitsubishi
RD16HHF1-101
RD16HHF
MITSUBISHI RF POWER MOS FET
transistor d 1680
mosfet HF amplifier
RD16HHF1 application notes
RD16H
marking L1 fet
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A 1469 mosfet
Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
Pch MOS FET
S 170 MOSFET TRANSISTOR
100OHM
mosfet 800 v
MITSUBISHI RF POWER MOS FET
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536378 345363789 RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
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68-88MHz
RA07H0608M
88-MHz
RA07H0608M
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MAR 544 MOSFET TRANSISTOR
Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically
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4th/Mar/02
RD70HVF1
75MHz70W
520MHz50W
RD70HVF1
175MHz
520MHz
MAR 544 MOSFET TRANSISTOR
J 6920 FET
MAR 740 MOSFET TRANSISTOR
LA 7814
RD70HVF
7907 mitsubishi
7386 mos
transistor d 2689
MOSFET 2095 transistor
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rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
rd01mus1 applications
3M Touch Systems
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16HHF1
Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
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RD16HHF1
30MHz
RD16HHF1
30MHz
16HHF1
TRANSISTOR D 471
RD 15 hf mitsubishi
transistor d 1680
MOSFET 606
transistor d 1564
mosfet HF amplifier
p 471 mosfet
RD16HHF
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