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    HARDNESS TESTER Search Results

    HARDNESS TESTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    Water-Quality-Tester Renesas Electronics Corporation Water Quality Tester Reference Design Visit Renesas Electronics Corporation
    ACS04KMSR-03 Renesas Electronics Corporation Rad-Hard Hex Inverter Visit Renesas Electronics Corporation
    ACS04DMSR-03 Renesas Electronics Corporation Rad-Hard Hex Inverter Visit Renesas Electronics Corporation
    ISL70003ASEHEV1Z Renesas Electronics Corporation Rad Hard 9A Buck Regulator Evaluation Board Visit Renesas Electronics Corporation
    HS7B-2510RH-Q Renesas Electronics Corporation Rad-Hard High Slew Rate Operational Amplifier Visit Renesas Electronics Corporation

    HARDNESS TESTER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CQFj 44

    Abstract: CQFJ 68 lead CQFJ
    Text: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through


    Original     		WS128K32-25G2SMX 128Kx32 1x106 1x1014 1x1011 1x1012 1x10-10 WS128K32-25AR 128Kx32 CQFj 44 CQFJ 68 lead CQFJ PDF

    203A665

    Abstract: J122 SMD TRANSISTOR 314 j122
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		203A665 1x106 1x1014 1x109 1x10-11 1x1012 5962H98615 40-Lead AS9000, 203A665 J122 SMD TRANSISTOR 314 j122 PDF

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040) PDF

    A1760

    Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE PDF

    BAE Systems

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML PDF

    transistor B885

    Abstract: 201A072 225A837 B885
    Text: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		201A072 225A837 1x106 1x1014 1x109 1x10-11 1x1012 5962H99541 40-Lead AS9000, transistor B885 201A072 225A837 B885 PDF

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833 PDF

    transistor m285

    Abstract: transistor C013 SMD A137 transistor k450 cm c013 transistor f630
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		167A690 182A934 5962H92153 36-Lead 28-Lead MIL-STD-1835, CDIP2-T28 1x106 1x1014 1x109 transistor m285 transistor C013 SMD A137 transistor k450 cm c013 transistor f630 PDF

    transistor B885

    Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		209A542 40-Lead 1x106 1x1014 1x109 1x10-11 AS9000, transistor B885 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML PDF

    238A792

    Abstract: No abstract text available
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792 PDF

    198A854

    Abstract: BAE Systems DQ72
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		198A854 1x106 1x1014 1x109 1x10-11 1x1012 308-Lead AS9000, 198A854 BAE Systems DQ72 PDF

    a3050

    Abstract: 86-65-3 D0950
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		198A854 308-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, a3050 86-65-3 D0950 PDF

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650 PDF

    190A325

    Abstract: C710 D 5962h96877
    Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		190A325 198A592 5962H96877 40-Lead 32-Lead 1x106 1x1014 1x109 1x10-11 C710 D 5962h96877 PDF

    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day


    Original     		HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600 PDF

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4 PDF

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems PDF

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


    Original     		238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE PDF

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050 PDF

    4031

    Abstract: OP27RP
    Text: Preliminary SEi - Radiation Hardened OP27RP Low Noise, Precision Operational Amplifier Features: • RAD-PAK technology hardened against natural space radiation • Total dose hardness typ 100 krad Si ; dependent upon orbit • Package: -8 pin RAD-PAK flat pack


    Original     		OP27RP 80nVp-p 126dB F8-01 99Rev0 4031 OP27RP PDF

    212A625

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		212A625 1x106 100Krads 1x1014 1x109 1x10-11 1x1012 AS9000, 212A625 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1,2nm RICMOS process • Total Dose Hardness through 1x106 rad SiOz • Neutron Hardness through 1x1 O'* cm 2 OTHER • Access Time of 25 ns (typical)


    OCR Scan     		1x106 1x109 PDF

    RAD HARD TRENCH TRANSISTOR

    Abstract: No abstract text available
    Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER


    OCR Scan     		1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 RAD HARD TRENCH TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)


    OCR Scan     		1x10e 1x101 36-Lead 28-Lead HC6856 1E-10 PDF