6508 RAM
Abstract: HM-6508-9 HM3-6508-9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508 HM-6508B-9
Text: HM-6508 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous
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HM-6508
HM-6508
20mW/MHz
180ns
6508 RAM
HM-6508-9
HM3-6508-9
HM1-6508-9
HM1-6508B-9
HM3-6508B-9
HM-6508B-9
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harris 6508
Abstract: HM-6508
Text: HM-6508/883 S E M I C O N D U C T O R 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM
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HM-6508/883
MIL-STD-883
HM-6508/883
20mW/MHz
180ns
100kHz
300oC
harris 6508
HM-6508
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74c920
Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's
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pin diagram AMD FX 9590
Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Text: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic
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K29793
NZ21084
RS39191
pin diagram AMD FX 9590
Transistor AF 138
laser sharp measurement
d6406
pby 283 diode data book
SN74298
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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LA 6508
Abstract: HM-6508-9 HM-6508 HM-6508-5 HM-6508B-8 HM-6508B-9 HM-6508-8 6508-5 6508 ram
Text: ¡2 HARRIS HM-6508 1024 x 1 CMOS RAM Features P in o u t • • • • • • • • • TO P VIEW Low Standby P o w e Max. Low Operating P o w e r . 20m W /M H z Max.
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HM-6508
20mW/MHz
180ns
HM-6508-5
HM-6508-9
HM-6508-8
HM-6508
LA 6508
HM-6508-9
HM-6508-5
HM-6508B-8
HM-6508B-9
HM-6508-8
6508-5
6508 ram
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harris 6508
Abstract: No abstract text available
Text: HM-6508 HARRIS S E M I C O N D U C T O R 102 4x 1 CMOS RAM March 1997 Features Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high per
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HM-6508
HM-6508
harris 6508
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Untitled
Abstract: No abstract text available
Text: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •
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HM-6508
180ns
HM-6508
00bfl244
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Untitled
Abstract: No abstract text available
Text: S HM-6508/883 HARRIS S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Description Features • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. • Low Power S ta n d b y .50^W Max
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HM-6508/883
MIL-STD-883
180ns
HM-6508/883
47ki2
100kHz
00bfl252
00bfi2S3
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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1024X1
Abstract: No abstract text available
Text: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM
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HM-6508/883
1024x1
HM-6508/883
lt-STD-1835,
GDIP1-T16
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U010B
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TS * •» * T D E I M30HS71 Ü010b40 3 I D 4 H M -6 5 0 Q h a rris 1024 x 1 CMOS RAM Pinout Features TOP VIEW .50|iW Max. • Low Operating P o w e r . 2 0 m W /M H z Max.
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M30HS71
010b40
180ns
U010B
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Untitled
Abstract: No abstract text available
Text: ¡ f i H U S E M I C O N D U C T O R U A R R HS-6508RH IS Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s
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HS-6508RH
1024x1
HS1-6508RH
25mW/MHz
300ns
HS9-6508RH
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1024x1 static ram
Abstract: No abstract text available
Text: HS-6508RH ¡13 H A R R IS U U S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s
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HS-6508RH
1024x1
HS1-6508RH
25mW/MHz
300ns
1024x1 static ram
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365089
Abstract: LA 6508
Text: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max
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HM-6508
HM-6508
365089
LA 6508
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Untitled
Abstract: No abstract text available
Text: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.
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HM-6508
1024x1
HM-6508
180ns
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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Untitled
Abstract: No abstract text available
Text: MCM6508 MCM6518 H , _ 1024 x 1 BIT STATIC RANDOM ACCESS MEMORY T he M C M 6508 and M C M 6518 are fu lly sta tic 1 02 4x 1 R A M s fabricated using CM O S silicon gate tec h n o lo g y . They o ffe r lo w p ow er o pe ratio n fro m a single + 5 V supp ly w ith data rete ntion to 2.0 V. The
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MCM6508
MCM6518
16-pin
MC146805.
CMOS3-33
MCM6508
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6508+(RAM)
Abstract: 6508
Text: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.
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HM-6508/883
MIL-STD-883
HM-6508/883
180ns
HM6508/883
100kHz
6508+(RAM)
6508
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Untitled
Abstract: No abstract text available
Text: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM
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HM-6508/883
1024x1
Mil-Std-883
HM-6508/883
180ns
MIL-STD-1835,
GDIP1-T16
MIL-M-38510
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Untitled
Abstract: No abstract text available
Text: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.
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HM-6508/883
HM-6508/883
IL-STD-883
100kHz
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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Halbleiterbauelemente DDR
Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)
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R-1035
Halbleiterbauelemente DDR
transistor vergleichsliste
u82720
Datenblattsammlung
VEB mikroelektronik
aktive elektronische bauelemente ddr
mikroelektronik datenblattsammlung
je 3055 Motorola
mikroelektronik DDR
Transistor Vergleichsliste DDR
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Untitled
Abstract: No abstract text available
Text: S m a rris HM -6508/883 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to Mii-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tand .
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Mii-Std-883
20mW/MHzMax.
180ns
3j-65
tMH-M-38510
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