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    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Search Results

    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9409

    Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
    Text: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow


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    PDF AN9409 1-800-4-HARRIS AN9409 transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


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    PDF AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic

    CD4016BEX

    Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
    Text: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF BR-027 82CXXX CD4016BEX MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE

    HRF3205L

    Abstract: mosfet HRF3205
    Text: HRF3205, HRF3205L, HRF3205S S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 100A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS HRF3205L mosfet HRF3205

    AN9321

    Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055
    Text: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


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    PDF AN9512 1-800-4-HARRIS AN9321 S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055

    TA17404

    Abstract: AN7254 RFM4N35 RFM4N40 RFP4N35 RFP4N40 TB334
    Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs [[ /Title /Title These are N-channel enhancement-mode silicon-gate RFM4N ( power field effect transistors designed for applications such 35,


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    PDF RFM4N35, RFM4N40, RFP4N35, RFP4N40 TA17404. RFM4N35 O-204AA AN7254 AN7260. TA17404 RFM4N35 RFM4N40 RFP4N35 RFP4N40 TB334

    IGPT CIRCUIT

    Abstract: HIP5600 HARRIS TO-220 400V to 6V DC Regulator TO 220 Package FUSE 1A 250V T zener diode configuration HIP5600 HIP5600IS2 V275LA10B HIP5600IS MO-169
    Text: HIP5600 S E M I C O N D U C T O R Thermally Protected High Voltage Linear Regulator January 1996 Features Description • • • • • • • • The HIP5600 is an adjustable 3-terminal positive linear voltage regulator capable of operating up to either


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    PDF HIP5600 HIP5600 400VDC 280VRMS. 50VDC 400VDC 50VRMS 280VRMS 1-800-4-HARRIS IGPT CIRCUIT HIP5600 HARRIS TO-220 400V to 6V DC Regulator TO 220 Package FUSE 1A 250V T zener diode configuration HIP5600IS2 V275LA10B HIP5600IS MO-169

    TA17424

    Abstract: AN7254 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334
    Text: RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFM7N35, RFM7N40, RFP7N35, RFP7N40 TA17424. AN7254 AN7260. TA17424 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


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    PDF RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10

    MAC202

    Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
    Text: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3


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    PDF ADC12130CIN 12-Bit LM2587 LM2594N50 LM50CIM3 LM6171BIN LP2980IM5-50 CA3338E HFA1103IP HIP4080AIP MAC202 led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC

    7n10le

    Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
    Text: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected


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    PDF RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 1-800-4-HARRIS 7n10le AN7254 AN7260 RFD7N10LE pspice model for ttl TC247

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


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    PDF RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055

    TA17425

    Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
    Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,


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    PDF O204AA, O220AB) RFM6N45, RFP6N45, RFP6N50 AN7254 AN7260 TA17425 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


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    PDF RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


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    PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bSE » • 43D5271 DDMflbb? 543 H H A S H H A R R IS SEMICONDUCTOR P R ELIM IN A R Y Features 1 M The HIP1031 is a High Side Driver Power Integrated Circuit designed to switch power supply voltage to an output load. It is the equivalent of a P N P pass transistor operated as a


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    PDF HIP1031 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V


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    PDF 43G2E71 HGTB12N60D1C TS-001AA O-220) 100ns 60jia ICL7667

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


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    PDF M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c

    Untitled

    Abstract: No abstract text available
    Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor October 1998 Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF RFM4N35, RFM4N40, RFP4N35, RFP4N40 TB334 TA17404. AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model


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    PDF RFD14N06, RFD14N06SM, RFP14N06 T0-220AB 100i2 O-251AA 1-800-4-HARRIS

    T0-262AA

    Abstract: No abstract text available
    Text: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


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    PDF RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS T0-262AA

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


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    PDF RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


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    PDF HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V

    Untitled

    Abstract: No abstract text available
    Text: H A F R F R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM IS s e m i c o n d u c t o r 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


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    PDF RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS