CGA-6618Z
Abstract: CGA6618 CGA-6618 CGA6618ZSB CGA6618ZSQ ETC1-1-13
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618Z
1000MHz
1000MHz
CGA-6681Z
Technolo-9421
CGA6618ZSB
CGA-6618Z
CGA6618
CGA-6618
CGA6618ZSB
CGA6618ZSQ
ETC1-1-13
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macom marking
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed
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CGA-6618Z
1000MHz
CGA-6618Z
CGA-6681Z
DS120502
CGA6618ZSB
macom marking
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Untitled
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed
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CGA-6618Z
1000MHz
1000MHz
CGA-6681Z
DS120502
CGA6618ZSB
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CGA-6681Z
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618Z
1000MHz
CGA-6618Z
CGA-6681Z
DS091119
CGA6618ZSB
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CGA6618Z
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000 MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618Z
CGA-6618Z
1000MHz
CGA-6681Z
CGA6618ZSB
CGA6618ZSQ
CGA6618ZSR
CGA6618Z
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CGR0218Z
Abstract: CGR-0218Z CGR0218ZSR CGA6618 CGR0218ZSB CGR0218ZSQ CGR0218ZTR13 CGR0218ZTR7 RF MICRO DEVICES SOIC-8
Text: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
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CGR-0218Z
210MHz
CGR-0218Z
DS091015
CGR0218ZSB
CGR0218ZSQ
CGR0218ZSR
CGR0218Z
CGR0218ZSR
CGA6618
CGR0218ZSB
CGR0218ZSQ
CGR0218ZTR13
CGR0218ZTR7
RF MICRO DEVICES SOIC-8
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Untitled
Abstract: No abstract text available
Text: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
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CGR-0218Z
210MHz
CGR-0218Z
DS091015
CGR0218ZSB
CGR0218ZSQ
CGR0218ZSR
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MARKING G5D
Abstract: HS350 PG2314T5N
Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
MARKING G5D
HS350
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CAPACITOR 33PF
Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT
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FPD1000AS
31dBm
42dBm
-52dBc
21dBm
FPD1000AS
14GHz)
EB1000AS-AD
CAPACITOR 33PF
8653 p
T491B105M035AS7015
ATC600S680
atc600s2r0bw
TP 220 bjt
Tyco 108-18
capacitor 1mf
BC 251 transistor
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12-PIN
Abstract: HS350 PG2301T5L
Text: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2301T5L is a GaAs HBT MMIC power amplifier for Bluetooth Class 1, and other ISM band applications. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2301T5L
PG2301T5L
12-pin
HS350
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301T5L POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2301T5L
PG2301T5L
12-pin
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nec 2412
Abstract: 2412 nec 60788
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2315T5T 2.4 GHz SINGLE BAND POWER AMPLIFIER FOR W-LAN DESCRIPTION The μPG2315T5T is GaAs HBT MMIC power amplifier which were developed for W-LAN. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2315T5T
PG2315T5T
16-pin
nec 2412
2412 nec
60788
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MARKING G5D
Abstract: PG2314T5N defects NEC 0745 PG10624EJ02V0DS HS350 Bluetooth class 1
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
MARKING G5D
defects
NEC 0745
PG10624EJ02V0DS
HS350
Bluetooth class 1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
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Collector Contact Optimization in GaAs HBT Manufacturing
Abstract: No abstract text available
Text: Collector Contact Optimization in GaAs HBT Manufacturing Lam Luu-Henderson, Daniel Weaver, Heather Knoedler, Shiban Tiku [email protected] Skyworks Solutions, Inc. Newbury Park, CA 91320 Keywords: Collector, Resistance, GaAs HBT, AuGe, Ni, Alloy Abstract
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SXT-289
Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
Pate02
016REF
118REF
041REF
EDS-101157
transistor 289
marking 25 mmic sot-89
MMIC "SOT 89" marking
Xa2 marking
Xa2 TRANSISTOR
xamp 034
XA2 MMIC
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marking 25 mmic sot-89
Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking 25 mmic sot-89
RF transistor marking IN SOT-89
MARKING 30 SOT89 DBM
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MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
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Untitled
Abstract: No abstract text available
Text: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
IS-95
EDS-101427
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Untitled
Abstract: No abstract text available
Text: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1318
SPA-1318
EDS-101429
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MCH18
Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
SPA-1118Z
EDS-101427
MCH18
MCR03
SPA-1118Z
TAJB106K020R
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200 watt schematics power amp
Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
SPA-1118Z
EDS-101427
200 watt schematics power amp
MCH18
MCR03
SPA-1118Z
TAJB106K020R
Sirenza Microdevices al
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msl 9350
Abstract: jack P4 GSM900 RF3802 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833
Text: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications
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RF3802
RF3802
EIA-481.
msl 9350
jack P4
GSM900
RF3802PCBA-410
RF3802PCBA-411
marking code c45 23
C4833
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
IS-95
EDS-101427
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