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    HE60 Search Results

    HE60 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    BLM21HE601SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM21HE601BH1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SH1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
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    HE60 Price and Stock

    TDK Corporation MMZ1608SHE601ATD25

    FERRITE BEAD 600 OHM 0603 1LN
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    DigiKey MMZ1608SHE601ATD25 Cut Tape 9,395 1
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    MMZ1608SHE601ATD25 Digi-Reel 9,395 1
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    MMZ1608SHE601ATD25 Reel 4,000 4,000
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    Avnet Americas MMZ1608SHE601ATD25 Reel 15 Weeks 4,000
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    Mouser Electronics MMZ1608SHE601ATD25 18,769
    • 1 $0.21
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    Newark MMZ1608SHE601ATD25 Cut Tape 3,350 10
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    • 100 $0.101
    • 1000 $0.085
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    TME MMZ1608SHE601ATD25 4,000
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    Avnet Abacus MMZ1608SHE601ATD25 19 Weeks 4,000
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    TAIYO YUDEN FBTH1608HE601-T

    FERRITE BEAD 600 OHM 0603 1LN
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    DigiKey FBTH1608HE601-T Digi-Reel 8,078 1
    • 1 $0.33
    • 10 $0.233
    • 100 $0.1602
    • 1000 $0.10573
    • 10000 $0.10573
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    Avnet Americas FBTH1608HE601-T Reel 7 Weeks 4,000
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    Mouser Electronics FBTH1608HE601-T 9,931
    • 1 $0.31
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    • 100 $0.156
    • 1000 $0.101
    • 10000 $0.085
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    TTI FBTH1608HE601-T Reel 4,000
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    Murata Manufacturing Co Ltd BLM18HE601SH1D

    FERRITE BEAD 600 OHM 0603 1LN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLM18HE601SH1D Digi-Reel 7,349 1
    • 1 $0.28
    • 10 $0.198
    • 100 $0.1362
    • 1000 $0.09032
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    BLM18HE601SH1D Cut Tape 7,349 1
    • 1 $0.28
    • 10 $0.198
    • 100 $0.1362
    • 1000 $0.09032
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    BLM18HE601SH1D Reel 4,000 4,000
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    Avnet Americas BLM18HE601SH1D Reel 9 Weeks 4,000
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    • 10000 $0.06707
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    Mouser Electronics BLM18HE601SH1D 2,881
    • 1 $0.27
    • 10 $0.148
    • 100 $0.131
    • 1000 $0.081
    • 10000 $0.068
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    Newark BLM18HE601SH1D Cut Tape 330 10
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    • 10 $0.148
    • 100 $0.13
    • 1000 $0.11
    • 10000 $0.11
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    TME BLM18HE601SH1D 4,000
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    • 10000 $0.0635
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    Avnet Abacus BLM18HE601SH1D 11 Weeks 4,000
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    Chip1Stop BLM18HE601SH1D Cut Tape 2,745
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    • 1000 $0.0648
    • 10000 $0.0624
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    Adam Technologies Inc 25CH-E6-04

    CONN RCPT HSG 4POS 2.50MM
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    DigiKey 25CH-E6-04 Bulk 6,253 1
    • 1 $0.1
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    • 100 $0.0358
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    Mouser Electronics 25CH-E6-04
    • 1 $0.1
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    • 100 $0.034
    • 1000 $0.028
    • 10000 $0.024
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    RS 25CH-E6-04 Bulk 12 Weeks 1,000
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    • 1000 $0.025
    • 10000 $0.025
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    Adam Technologies Inc 25CH-E6-03

    CONN RCPT HSG 3POS 2.50MM
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    DigiKey 25CH-E6-03 Bulk 5,436 1
    • 1 $0.1
    • 10 $0.027
    • 100 $0.0218
    • 1000 $0.01776
    • 10000 $0.01611
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    Mouser Electronics 25CH-E6-03
    • 1 $0.1
    • 10 $0.042
    • 100 $0.027
    • 1000 $0.02
    • 10000 $0.016
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    RS 25CH-E6-03 Bulk 12 Weeks 1,000
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    HE60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HE600X0302S AVX High Voltage Ceramic Capacitor Original PDF
    HE6032 auris-GmbH Quartz SMD, Epoxy Original PDF
    HE6034 auris-GmbH Quartz SMD, Epoxy Original PDF
    HE6035 auris-GmbH Quartz SMD, Epoxy Original PDF

    HE60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HE6035

    Abstract: No abstract text available
    Text: Quartz SMD, Epoxy HE6035/2 HE6035/4 Features: - Application: Bluetooth, wireless LAN - Ultra-thin and small leadress type - Automatic mounting is enabled by emboss taping - Reflow soldering - RoHS conform Specifications Symbol f Df/f CL HE6035 12.000MHz ~ 40.000MHz


    Original
    HE6035/2 HE6035/4 HE6035 000MHz 30ppm 50ppm 500mW HE6035 PDF

    HE6009

    Abstract: HJ122
    Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.


    Original
    HE6009 HJ122 HJ122 O-252 HE6009 PDF

    HJ41C

    Abstract: Y2 MARKING marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.


    Original
    HE6010 HJ41C HJ41C O-252 183oC 217oC 260oC Y2 MARKING marking Y1 transistor PDF

    HE6009

    Abstract: HJ122 Y2 MARKING
    Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.


    Original
    HE6009 HJ122 O-252 HJ122 200oC 183oC 217oC 260oC 245oC HE6009 Y2 MARKING PDF

    y2 marking

    Abstract: A1 marking code amplifier HJ3669 a5 marking
    Text: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.


    Original
    HE6029 HJ3669 HJ3669 O-252 183oC 217oC 260oC y2 marking A1 marking code amplifier a5 marking PDF

    HE6035

    Abstract: No abstract text available
    Text: Quartz SMD HE6035/2 HE6035/4 Features: - Application: Bluetooth, wireless LAN - Ultra-thin and small leadless type - Automatic mounting is enabled by emboss taping Specifications Symbol f Äf/f CL HE6035 11.000MHz ~ 40.000MHz ±20ppm ~ ±50ppm 10pF ~ 30pF


    Original
    HE6035/2 HE6035/4 HE6035 000MHz 20ppm 50ppm HE6035 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    HE6014 HJ882 HJ882 O-252 Tota60 183oC 217oC 260oC PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    HE6015 HJ772 HJ772 O-252 200oC 183oC 217oC 260oC 245oC PDF

    HJ112

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 1/4 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications.


    Original
    HE6030 HJ112 HJ112 O-252 PDF

    HJ3669

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6029-B Issued Date : 1997.10.24 Revised Date : 2000.11.01 Page No. : 1/3 HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.


    Original
    HE6029-B HJ3669 HJ3669 PDF

    HLB121J

    Abstract: VCB-55
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6027 Issued Date : 1996.11.11 Revised Date : 2001.05.01 Page No. : 1/3 HLB121J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121J is a medium power transistor designed for use in


    Original
    HE6027 HLB121J HLB121J VCB-55 PDF

    HJ772

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    HE6015 HJ772 HJ772 O-252 PDF

    HJ50

    Abstract: vce 500v NPN Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6016 Issued Date : 1996.04.12 Revised Date : 2002.02.26 Page No. : 1/3 HJ50 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ50 is designed for line operated audio output amplifier switch mode power supply drivers and other switching applications.


    Original
    HE6016 O-252 HJ50 vce 500v NPN Transistor PDF

    HJ3953

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6021-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amp, Features • High fT: fT =400MHz


    Original
    HE6021-B HJ3953 400MHz HJ3953 PDF

    Untitled

    Abstract: No abstract text available
    Text: HE600 FEATURES • • • • • • • • • • • 120/240VAC 3∅, 4W SECONDARY SURGE "LIGHTNING" ARRESTER Industrial/Commercial Version MOV Circuit Design Made in America utilizing American Components Cost Effective Reliable Solid-State Protection


    Original
    HE600 120/240VAC HE600 8x20uS) 100uA PDF

    HE600

    Abstract: SPD600 automatic irrigation system lightning arrester HE4803 HE500 HE510 High Voltage Power Systems metal oxide varistor 500V high voltage surge arrester
    Text: HE600 120/240VAC 3∅ ∅, 4W FEATURES • • • • • • • • • • • SECONDARY SURGE "LIGHTNING" ARRESTER Industrial/Commercial Version MOV Circuit Design Made in America utilizing American Components Cost Effective Reliable Solid-State Protection


    Original
    HE600 120/240VAC HE600 8x20uS) 100uA SPD600 automatic irrigation system lightning arrester HE4803 HE500 HE510 High Voltage Power Systems metal oxide varistor 500V high voltage surge arrester PDF

    A1 marking code amplifier

    Abstract: HJ117
    Text: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.


    Original
    HE6031 HJ117 O-252 HJ117 183oC 217oC 260oC A1 marking code amplifier PDF

    HJ112

    Abstract: A1 marking code amplifier HE6030
    Text: HI-SINCERITY Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications.


    Original
    HE6030 HJ112 HJ112 O-252 200oC 183oC 217oC 260oC 245oC A1 marking code amplifier HE6030 PDF

    HJ10387

    Abstract: A1 marking code amplifier Y2 MARKING HE6028
    Text: HI-SINCERITY Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications.


    Original
    HE6028 HJ10387 HJ10387 O-252 200oC 183oC 217oC 260oC 245oC A1 marking code amplifier Y2 MARKING HE6028 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6001 Issued Date : 1996.02.26 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ31C is designed for use in general purpose amplifier and switching applications.


    Original
    HE6001 HJ31C HJ31C O-252 183oC 217oC 260oC PDF

    HE6020-B

    Abstract: HJ1538 120Vmin
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6020-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1538 PNP EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amp. Features • High fT: fT=400MHz


    Original
    HE6020-B HJ1538 400MHz -120Vmin HE6020-B HJ1538 120Vmin PDF

    HJ882

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    HE6014 HJ882 HJ882 O-252 PDF

    HJ340

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6012-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ340 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.


    Original
    HE6012-B HJ340 HJ340 PDF

    HJ127

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2003.01.17 Page No. : 1/3 HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings Ta=25°C


    Original
    HE6017 HJ127 O-252 HJ127 PDF