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    HE601 Search Results

    HE601 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    BLM21HE601SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM21HE601BH1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SH1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
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    HE601 Price and Stock

    TDK Corporation MMZ1608SHE601ATD25

    FERRITE BEAD 600 OHM 0603 1LN
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    TAIYO YUDEN FBTH1608HE601-T

    FERRITE BEAD 600 OHM 0603 1LN
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    DigiKey FBTH1608HE601-T Digi-Reel 8,078 1
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    Murata Manufacturing Co Ltd BLM18HE601SH1D

    FERRITE BEAD 600 OHM 0603 1LN
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    DigiKey BLM18HE601SH1D Digi-Reel 7,349 1
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    BLM18HE601SH1D Cut Tape 7,349 1
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    Mouser Electronics BLM18HE601SH1D 2,881
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    Murata Manufacturing Co Ltd BLM21HE601BH1L

    FERRITE BEAD 600 OHM 0805 1LN
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    DigiKey BLM21HE601BH1L Digi-Reel 4,846 1
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    BLM21HE601BH1L Cut Tape 4,846 1
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    Mouser Electronics BLM21HE601BH1L 3,402
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    Murata Manufacturing Co Ltd BLM21HE601SN1L

    FERRITE BEAD 600 OHM 0805 1LN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLM21HE601SN1L Reel 3,000 3,000
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    Avnet Americas BLM21HE601SN1L Reel 15 Weeks 3,000
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    Mouser Electronics BLM21HE601SN1L 5,630
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    TTI BLM21HE601SN1L Reel 3,000
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    HE601 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HJ41C

    Abstract: Y2 MARKING marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.


    Original
    HE6010 HJ41C HJ41C O-252 183oC 217oC 260oC Y2 MARKING marking Y1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    HE6014 HJ882 HJ882 O-252 Tota60 183oC 217oC 260oC PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    HE6015 HJ772 HJ772 O-252 200oC 183oC 217oC 260oC 245oC PDF

    HJ772

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    HE6015 HJ772 HJ772 O-252 PDF

    HJ50

    Abstract: vce 500v NPN Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6016 Issued Date : 1996.04.12 Revised Date : 2002.02.26 Page No. : 1/3 HJ50 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ50 is designed for line operated audio output amplifier switch mode power supply drivers and other switching applications.


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    HE6016 O-252 HJ50 vce 500v NPN Transistor PDF

    HJ882

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    HE6014 HJ882 HJ882 O-252 PDF

    HJ340

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6012-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ340 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.


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    HE6012-B HJ340 HJ340 PDF

    HJ127

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2003.01.17 Page No. : 1/3 HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings Ta=25°C


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    HE6017 HJ127 O-252 HJ127 PDF

    HJ772

    Abstract: H*772
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    HE6015 HJ772 HJ772 O-252 H*772 PDF

    HJ882

    Abstract: HE6014 HJ882Q
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    HE6014 HJ882 HJ882 O-252 HE6014 HJ882Q PDF

    hj882

    Abstract: HE601 a5 marking
    Text: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator,


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    HE6014 HJ882 HJ882 O-252 10sec HE601 a5 marking PDF

    HJ42C

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6013-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.


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    HE6013-B HJ42C HJ42C PDF

    HJ41C

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2002.03.04 Page No. : 1/3 HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.


    Original
    HE6010 HJ41C HJ41C O-252 PDF

    HJ210

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications.


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    HE6011-B HJ210 HJ210 PDF

    hj772

    Abstract: Y2 MARKING
    Text: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2008.06.19 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator,


    Original
    HE6015 HJ772 HJ772 O-252 217oC 260oC 10sec Y2 MARKING PDF

    A1 marking code amplifier

    Abstract: HJ42C
    Text: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.


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    HE6013 HJ42C HJ42C O-252 183oC 217oC 260oC A1 marking code amplifier PDF

    HJ1109

    Abstract: HJ1609
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier. • Complementary pair with HJ1609. Absolute Maximum Ratings Ta=25°C


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    HE6019-B HJ1109 HJ1609. HJ1109 HJ1609 PDF

    HE6018-B

    Abstract: HJ1109 HJ1609 HJ-160
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6018-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1609 NPN EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier. • Complementary pair with HJ1109. Absolute Maximum Ratings Ta=25°C


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    HE6018-B HJ1609 HJ1109. HE6018-B HJ1109 HJ1609 HJ-160 PDF