IC350
Abstract: H2N6718L
Text: HI-SINCERITY Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No. : 1/5 MICROELECTRONICS CORP. H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications.
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Original
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HE6218
H2N6718L
H2N6718L
850mW
183oC
217oC
240oC
260oC
IC350
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PDF
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transistor mark code t1
Abstract: H2N3904
Text: HI-SINCERITY Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/5 MICROELECTRONICS CORP. H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92
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Original
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HE6218
H2N3904
H2N3904
183oC
217oC
260oC
transistor mark code t1
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PDF
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H2N3904
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2002.04.03 Page No. : 1/4 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings
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Original
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HE6218
H2N3904
H2N3904
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PDF
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H2N6718L
Abstract: Switching transistor 50115
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 1/4 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications.
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Original
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HE6218
H2N6718L
H2N6718L
850mW
Switching transistor 50115
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PDF
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