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    HEMT Price and Stock

    Broadcom Limited HEMT-3301

    EMITTER IR 940NM 100MA RADIAL
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    Omega Engineering HEMTIN-040G-6

    TRANSITION JUNCTION T/C PROBE, M
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    DigiKey HEMTIN-040G-6 Bulk 1
    • 1 $82.49
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    Avnet Americas HEMTIN-040G-6 Bulk 8 Weeks 1
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    Newark HEMTIN-040G-6 Bulk 1
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    RS HEMTIN-040G-6 Bulk 5 Weeks 1
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    Omega Engineering HEMTSS-062U-6

    HIGH TEMPERATURE MOLDED TRANSITION JUNCTION STYLE THERMOCOUPLE PROBES (0.010" TO 0.125" DIAMETER) - Bulk (Alt: HEMTSS-062U-6)
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    Avnet Americas HEMTSS-062U-6 Bulk 4 Weeks 1
    • 1 $67.82505
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    Newark HEMTSS-062U-6 Bulk 1
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    Omega Engineering HEMTSS-062U-12

    HIGH TEMPERATURE MOLDED TRANSITION JUNCTION STYLE THERMOCOUPLE PROBES (0.010" TO 0.125" DIAMETER) - Bulk (Alt: HEMTSS-062U-12)
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    Avnet Americas HEMTSS-062U-12 Bulk 4 Weeks 1
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    Newark HEMTSS-062U-12 Bulk 1
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    Omega Engineering HEMTIN-125U-6

    HIGH TEMPERATURE MOLDED TRANSITION JUNCTION STYLE THERMOCOUPLE PROBES (0.010" TO 0.125" DIAMETER) - Bulk (Alt: HEMTIN-125U-6)
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    Avnet Americas HEMTIN-125U-6 Bulk 4 Weeks 1
    • 1 $68.20035
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    Newark HEMTIN-125U-6 Bulk 1
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    Find more HEMT price and stock on Findchips.com

    HEMT Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HEMT-1001 Agilent Technologies 940 nm High Radiant Emitter Original PDF
    HEMT1001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT-3300 Agilent Technologies T-1 3/4 670 nm High Radiant Intensity Emitter Original PDF
    HEMT3300 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT-3301 Agilent Technologies 940 nm High Radiant Emitter Original PDF
    HEMT-3301 Avago Technologies 940 nm High Radiant Emitter Original PDF
    HEMT3301 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT6000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    HEMT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


    OCR Scan     		TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic PDF

    9701455-S-J1

    Abstract: APH184C
    Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps


    OCR Scan     		APH184C APH184C SA051 9701455-S-J1 9701455-S-J1 PDF

    SA051

    Abstract: HEMT Amplifier
    Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA


    OCR Scan     		APH212C APH212C SA051 006/J-2 SA051 HEMT Amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: ##?rV K-Band Medium Power HEMT Amplifier_APH196C Features • RF frequency: 17 to 30 GHz • Linear gain: >16 dB • PldB: >22 dBm Typical • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4 Vdc at 400 mA


    OCR Scan     		APH196C APH196C SA025 006/J-2 PDF

    ALH140C

    Abstract: UM 3842 MN1400
    Text: TRYw Ka-Band HEMT Low-Noise Amplifier ALH140C Features • RF Frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Biasable from either side of chip • PldB: 15 dB


    OCR Scan     		ALH140C ALH140C compat2500 m1930 006/J-2 UM 3842 MN1400 PDF

    GaAs S2p

    Abstract: hemt .s2p
    Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V


    Original     		TGF2023-01 TGF2023-01 DC-18 0007-inch EAR99 GaAs S2p hemt .s2p PDF

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		TGF2023-02 TGF2023-02 DC-18 0007-inch EAR99 PDF

    TOSHIBA HEMT

    Abstract: TGI7785-120L
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		TGI7785-120L -25dBc 44dBm 20dBm 7-AA06A) TOSHIBA HEMT TGI7785-120L PDF

    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


    OCR Scan     		PDF

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi PDF

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153 PDF

    microwave MARCONI

    Abstract: H40P NN12 P35-5123-000-200 MARCONI power
    Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm


    Original     		P35-5123-000-200 26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz. 463/SM/02579/000 microwave MARCONI H40P NN12 MARCONI power PDF

    ATF-38143

    Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70


    Original     		ATF-38143 OT-343 SC-70) 5968-7868E ATF-38143 ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20 PDF

    H40P

    Abstract: NN12 P35-5135-000-200
    Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers


    Original     		P35-5135-000-200 28GHz 27dBm P35-5135-000-200 28GHz 463/SM/02574/000 H40P NN12 PDF

    Marconi

    Abstract: MARCONI amplifier NN12 MARCONI power
    Text: P35-5122-000-200 HEMT DRIVER AMPLIFIER 8.5 – 10.5GHz Features • • • 26dBm Output Power @6V 18dB Typical Gain Small 2.49 x 1.4mm Die Size Description The P35-5122-000-200 is a high performance 8.5-10.5GHz Gallium Arsenide driver amplifier. This product is


    Original     		P35-5122-000-200 26dBm P35-5122-000-200 100mA, 170mA 462/SM/02348/000 Marconi MARCONI amplifier NN12 MARCONI power PDF

    MARCONI amplifier

    Abstract: 84-1LMI NN12 P35-5112-000-200
    Text: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.


    Original     		P35-5112-000-200 P35-5112-000-200 462/SM/02343/200 MARCONI amplifier 84-1LMI NN12 PDF

    SPF 455

    Abstract: SPF-1576 SPF 455 H 5 SPF-1676
    Text: SPF-1576, -1676 2-26 GHz Low Noise HEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available


    OCR Scan     		SPF-1576, SPF-1576 SPF 455 SPF 455 H 5 SPF-1676 PDF

    GD-30

    Abstract: No abstract text available
    Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4934CM MGF4934CM 12GHz GD-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation


    Original     		RF3934 RF3934 DSB070828 PDF

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223 PDF

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original     		MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581 PDF

    l8113

    Abstract: integrated switch negative voltage generator 100Nf Pins l8113
    Text: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a


    Original     		L8113 L8113 QW-R123-002 integrated switch negative voltage generator 100Nf Pins l8113 PDF

    TRW Microwave Detector

    Abstract: TRW MICROWAVE
    Text: APH239C K-Band Power HEMT Amplifier GaAs Telecom Products Features • RF frequency: 37 to 43 GHz • Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 16 dB • Built-in power detector Self-biased first stage • Unconditionally stable


    OCR Scan     		APH239C APH239C 4730x1440 E2/5042, 9701455-S-J1 9701455-1018-SJ1 TRW Microwave Detector TRW MICROWAVE PDF