smd 2f
Abstract: IRFN9140
Text: Provisional Data Sheet No. PD-9.1553A HEXFET POWER MOSFET IRFN9140 P-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
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IRFN9140
smd 2f
IRFN9140
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smd 2f
Abstract: IRFN9240 Diode smd 2f ir mosfet smd package smd diode 44 smd diode 2F 7A
Text: Provisional Data Sheet No. PD-9.1554A HEXFET POWER MOSFET IRFN9240 P-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
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IRFN9240
smd 2f
IRFN9240
Diode smd 2f
ir mosfet smd package
smd diode 44
smd diode 2F 7A
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IRFN350
Abstract: 1-002 J
Text: Provisional Data Sheet No. PD-9.1551 HEXFET POWER MOSFET IRFN350 N-CHANNEL Ω HEXFET 400 Volt, 0.315Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN350
IRFN350
1-002 J
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smd diode 39a
Abstract: N CHANNEL MOSFET 10A 1000V IRFNG40
Text: Provisional Data Sheet No. PD-9.1555 HEXFET POWER MOSFET IRFNG40 N-CHANNEL Ω HEXFET 1000 Volt, 3.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFNG40
smd diode 39a
N CHANNEL MOSFET 10A 1000V
IRFNG40
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IRFY130C
Abstract: IRFY130CM
Text: Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1286C
IRFY130CM
IRFY130C
IRFY130CM
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9418a
Abstract: IRFN450
Text: Provisional Data Sheet No. PD-9.418A HEXFET POWER MOSFET IRFN450 N-CHANNEL Ω HEXFET 500 Volt, 0.415Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN450
9418a
IRFN450
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DIODE SMD 10A
Abstract: mosfet 400 V 10A IRFN340
Text: Provisional Data Sheet No. PD-9.1550 HEXFET POWER MOSFET IRFN340 N-CHANNEL Ω HEXFET 400 Volt, 0.55Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN340
DIODE SMD 10A
mosfet 400 V 10A
IRFN340
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IRFN250
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1549 HEXFET POWER MOSFET IRFN250 N-CHANNEL Ω HEXFET 200 Volt, 0.100Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN250
IRFN250
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IRFY044C
Abstract: IRFY044CM
Text: Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1285C
IRFY044CM
IRFY044C
IRFY044CM
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IRFN150
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N-CHANNEL Ω HEXFET 100 Volt, 0.060Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN150
IRFN150
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IRFY430C
Abstract: IRFY430CM
Text: Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1291B
IRFY430CM
IRFY430C
IRFY430CM
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diode.18
Abstract: IRFN240
Text: Provisional Data Sheet No. PD-9.1548 HEXFET POWER MOSFET IRFN240 N-CHANNEL Ω HEXFET 200 Volt, 0.18Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN240
diode.18
IRFN240
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IRFY140C
Abstract: IRFY140CM
Text: Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1287B
IRFY140CM
IRFY140C
IRFY140CM
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smd diode 307
Abstract: IRFN140
Text: Provisional Data Sheet No. PD-9.1546 HEXFET POWER MOSFET IRFN140 N-CHANNEL Ω HEXFET 100 Volt, 0.077Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN140
smd diode 307
IRFN140
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IRFY240C
Abstract: IRFY240CM
Text: Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1289B
IRFY240CM
IRFY240C
IRFY240CM
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smd DIODE 44A
Abstract: smd 44A IRFN044
Text: Provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N-CHANNEL Ω HEXFET 60 Volt, 0.040Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFN044
smd DIODE 44A
smd 44A
IRFN044
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44 LS 95
Abstract: IRFY440C IRFY440CM
Text: Provisional Data Sheet No. PD 9.1292B IRFY440CM HEXFET POWER MOSFET N-CHANNEL Product Summary 500 Volt, 0.85Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1292B
IRFY440CM
44 LS 95
IRFY440C
IRFY440CM
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
AN-966.
-250V
AN-964D
HEXFET III - A new Generation of Power MOSFETs
irf 1490
AN-964D
irfc9024
AN-966
1000V P-channel MOSFET
application new hexfet
AN966
transistor 9527
IRFC210
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
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5S45S
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi
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IRFY9240CM
-200Volt,
5545S
DD24541
5S45S
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dts200
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi
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SMD diode JB
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1546 International IOR Rectifier HEXFET POWER MOSFET IRFN140 N -C H A N N E L Product Summary 100 Vblt, 0.077» HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi
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IRFN140
0D24flb4
SMD diode JB
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1546 International IQ R Rectifier HEXFET POWER MOSFET IRFN140 N -C H A N N E L Product Summary 100 Volt, 0.0770 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors.The effi
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Untitled
Abstract: No abstract text available
Text: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi
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JANTX2N6766
JANTXV2N6766
MIL-PRF-19500/543]
IRF250]
D025132
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