nec 1678
Abstract: UPC1678G PC1678G top marking UPC1678G
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC1678G 2.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON MMIC DESCRIPTION The /xPC1678G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering HF through UHF band with middle output power.
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uPC1678G
/xPC1678G
uPC1678G-E1
nec 1678
PC1678G
top marking UPC1678G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1678G 2.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON MMIC DESCRIPTION The ¿¡PC1678G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering HF through UHF band with middle output power.
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uPC1678G
PC1678G
678G-E1
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PC2709T
Abstract: PC2710TB HF mark 6pin
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.
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PC2776TB
PC2776TB
PC2709T
PC2710TB
HF mark 6pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ESC R IPTIO N The ¿iPC2776TB is a silicon monolithic integrated circuits designed as w ideband amplifier. impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band.
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uPC2776TB
iPC2776TB
iPC2776T
iPC2776T.
VP15-00-3
WS60-00-1
C10535E)
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PC2776TB
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band. This 1C is packaged in super
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uPC2776TB
PC2776TB
PC2776T
//PC2776TB
iPC2776T.
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transistor kp 303
Abstract: VP15-00-3 transistor 14026
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super
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PC2776TB
PC2776TB
PC2776T
PC2776T.
transistor kp 303
VP15-00-3
transistor 14026
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2SC1969
Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.
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2SC1969
Gpe12dB
27MHz,
27MHz
2SC1969
2sc1969 transistor
transistor 2sC1969
HF power amplifier
f-27MHz
27mhz transistor
2sc196
12v power amplifiers
27mhz
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IC 30427
Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.
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RD06HHF1
30MHz
30MHz
RD06HHF1
IC 30427
IC 30427 M
transistor d 1557
1518 B FET TRANSISTOR
30427
25.ID5
mosfet HF amplifier
Pch MOS FET
mosfet vgs 5v
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transistor d 1557
Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.
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RD06HHF1
30MHz
30MHz
RD06HHF1
transistor d 1557
transistor 45 f 123
mosfet HF amplifier
MITSUBISHI RF POWER MOS FET
RF POWER TRANSISTOR 30MHz
RD06HHF
hf power transistor mosfet
j4 92
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2sc2166
Abstract: No abstract text available
Text: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.
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2SC2166
27MHz,
CH2SC2166
27MHz
2sc2166
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Product Selector Guide
Abstract: NI-400S-2S
Text: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high
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MMRF2004NBR1ï
MMRF2006NT1ï
1230S--4L2L
NI--780GS--4L
NI--880XGS--2L
NI--1230H--4S
NI--1230S--4S4S
OM--780--2L
OM--780G--2L
OM--780--4L
Product Selector Guide
NI-400S-2S
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27MHz rf transmitter
Abstract: 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282
Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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NTE282
27MHz,
400mA
100mA
-15mA,
-100mA
400mW,
27MHz
27MHz rf transmitter
27mhz transmitter
27mhz transmitter circuit
npn power transistor ic 400ma
NTE282
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27MHz rf transmitter
Abstract: 27mhz transmitter circuit NTE282
Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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NTE282
27MHz,
400mA
100mA
400mW,
27MHz
27MHz rf transmitter
27mhz transmitter circuit
NTE282
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES
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0017bfi0
2SC3241
30MHz,
15-j1
2SC3241
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2SC1969
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'
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2SC1969
2SC1969
27MHz
O-220
27MHz.
150mA
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2SC2086
Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES
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2SC2086
2SC2086
27MHz
50S5
transistor U4
NPN Silicon Epitaxial Planar Transistor to92
2sc2086 transistor
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arco 406
Abstract: No abstract text available
Text: ARF521 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.
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ARF521
150MHz
150MHz.
81MHz
470nH
VK200-4B
ARF521
arco 406
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2SC2097 equivalent
Abstract: 2sc2097 transistor 2SC2097
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES
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2SC2097
2SC2097
30MHz
30MHz,
2k3k5k10k
2SC2097 equivalent
transistor 2SC2097
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TRANSISTOR 2sC1945
Abstract: 2sc1945 2sC1945 NPN ABE 710
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES D im ensions in mm
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2SC1945
2SC1945
27MHz
T0-220
27MHz.
TRANSISTOR 2sC1945
2sC1945 NPN
ABE 710
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KTC3192
Abstract: transistor KTC3192 hFE kec
Text: KTC3192 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz). MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Collector-Base Voltage
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KTC3192
KTC3192
transistor KTC3192
hFE kec
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KTC4079
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4079 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC -Œ SYMBOL Collector-Base Voltage
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KTC4079
KTC4079
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2sc2166
Abstract: 2SC2166 equivalent
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES
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2SC2166
2SC2166
2SC2166 equivalent
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Untitled
Abstract: No abstract text available
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:
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NTE236
27MHz,
O220AB
NTE236
O220AB
27MHz
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transistor marking code HF
Abstract: HF MARKING sot23 marking code RY SOT KTC3879 HF marking transistor sot-23 sot-23 marking hf NPN Silicon Epitaxial Planar Transistor MARKING sot23 235 marking code RR Transistor sot23
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3879 Pb Lead-free z High power gain. APPLICATIONS z High frequency application. z HF,VHF band amplifier appilication. SOT-23 ORDERING INFORMATION Type No. Marking
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KTC3879
OT-23
BL/SSSTC110
transistor marking code HF
HF MARKING sot23
marking code RY SOT
KTC3879
HF marking transistor sot-23
sot-23 marking hf
NPN Silicon Epitaxial Planar Transistor
MARKING sot23 235
marking code RR Transistor sot23
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