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    HFE IS TRANSISTOR Search Results

    HFE IS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    HFE IS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors hFE rankings codes hFE rankings codes FThe hFE values of ROHM transistors are classified as shown below, and the hFE code is marked on each product. The hFE of the TO-220FP and TO-220FN are classified as shown below, and the hFE code is marked on each product.


    Original     		O-220FP O-220FN PDF

    marking codes SOT23 SS

    Abstract: marking 7T
    Text: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs


    OCR Scan     		CMPT3904 CMPT3906 T3904, T3906 OT-23 100MHz marking codes SOT23 SS marking 7T PDF

    D1980

    Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated


    OCR Scan     		2SD1980F5 SC-63) D1980 2SD1980 K35kQ R2se300Q 2SD1980F5 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 damper diode darlington npn transistor t f5 j PDF

    2SA1312

    Abstract: No abstract text available
    Text: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)


    Original     		MMBTSC3324LT1 OT-23 2SA1312 100Hz, 2SA1312 PDF

    lowest noise audio NPN

    Abstract: 2SA1312 hFE is transistor
    Text: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)


    Original     		MMBTSC3324LT1 OT-23 2SA1312 100Hz, lowest noise audio NPN 2SA1312 hFE is transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 5.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE


    Original     		2SD892, 2SD892A 2SD892 2SD892A PDF

    2SD893

    Abstract: 2SD893A
    Text: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE


    Original     		2SD893, 2SD893A 2SD893 2SD893 2SD893A PDF

    D1980

    Abstract: diode marking F5
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated


    OCR Scan     		2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5 PDF

    103 transistor

    Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)


    OCR Scan     		2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor PDF

    2SD1834

    Abstract: No abstract text available
    Text: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA


    OCR Scan     		2SD1834 OT-89, SC-62) 2SD1834; A/500 2SD1834 2SD1834, PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20000.


    Original     		2SD893, 2SD893A 2SD893 PDF

    B1316

    Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
    Text: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •


    OCR Scan     		2SB1316F5 SC-63) B1316 2SB1316F5 DIODE B1316 B-1316 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking PDF

    D2318

    Abstract: No abstract text available
    Text: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,


    OCR Scan     		2SD2318F5 SC-63) D2318 2SD2318F5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 ● ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE


    Original     		2SD893, 2SD893A 2SD893 2SD893A PDF

    b1316

    Abstract: B131-6
    Text: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated


    OCR Scan     		2SB1316F5 SC-63) B1316 2SB1316F5 2SB1316F5, B131-6 PDF

    dual sot363

    Abstract: CMKT5089M10 C9M0
    Text: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is


    Original     		CMKT5089M10 OT-363 CMKT5089M10 21-November dual sot363 C9M0 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity


    OCR Scan     		2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 001470b PDF

    2SD2318F5

    Abstract: No abstract text available
    Text: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D 2 3 18 *Q , where ★ is hFE code and □ is lot number • high DC current amplification, typically hFE = 1000 • low collector saturation voltage,


    OCR Scan     		2SD2318F5 SC-63) 2SD2318F5 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA


    Original     		MMBTSA1505LT1 -400mA OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA


    Original     		MMBTSA1505LT1 -400mA OT-23 PDF

    113 marking code PNP transistor

    Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
    Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3


    OCR Scan     		2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 113 marking code transistor T146 transistor PNP transistor 2SB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W ^, where ★ is hFE code Darlington connection provides high hFE = 50,000 (typically) at 100 mA • 2SD1383K (SMT3)


    OCR Scan     		2SD1383K SC-59) 2SD1383K; 2SD1383K 2SD1383K, PDF

    2SC3245

    Abstract: 2SA1285 2SC3245A
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3245,2SC3245A FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3245.2SC3245A is a silicon NPN epitaxial type transistor. «&5.1MAX Designed with high voltage, high hFE, high fr, low Cob and excellent hFE


    OCR Scan     		2SC3245 2SC3245A 2SC3245A 2SA1285 2SA1285A. 200MHz, 150to800 900mW 270Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA


    Original     		MMBTSA1505 -400mA OT-23 PDF