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    HFET1102 Search Results

    HFET1102 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HFET-1102 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF

    HFET1102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    14CL 40

    Abstract: ET1102 et 1102 HFET-1101 HFET-1102 2N6680 HPAC-100A HFET1102 14cl ET 2314
    Text: NEW 2N6680 H E W L E T T PACKARD HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz a HIGH OUTPUT POWER


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    PDF 2N6680 HFET-1101) HFET-1102 2N6680) HFET-1102) HFET-1102 14CL 40 ET1102 et 1102 HFET-1101 2N6680 HPAC-100A HFET1102 14cl ET 2314

    TRANSISTOR noise figure measurements

    Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
    Text: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER


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    PDF 2N6680 HFET-1101) HFET-1102 2N6680) HFET-1102) HFET-1102 TRANSISTOR noise figure measurements Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite

    HFET-1101

    Abstract: HP 1102 HPAC-100A 2N6680 b836 HFET-1102 TXVBF-1102 TXVF-1102 HFET1102 GM 1101
    Text: H E W L E T T PACKARD COM PON EN TS HIGH RELIABILITY MICROWAVE GaAS FETS 2N6680 TXV 2N6680 TXVB TXVF-1102 TXVBF-1102 D e s c r ip t io n Hewlett-Packard is capable of executing alternative programs based upon individual customer’s specifi­ cations. TA B LE I


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    PDF 2N6680 TXVF-1102 TXVBF-1102 2N6680 HFET-1101) HFET-1102. HFET-1101 HP 1102 HPAC-100A b836 HFET-1102 TXVBF-1102 HFET1102 GM 1101