Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HFI50N06 Search Results

    HFI50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BVDSS = 60 V RDS on = 18 mΩ HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW50N06  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI50N06 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		HFW50N06 HFI50N06 HFW50N06 PDF