HGT1S12N60B3S9A Search Results

HGT1S12N60B3S9A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HGT1S12N60B3S9A		Fairchild Semiconductor	27A, 600V, UFS N-Channel IGBT		Original	PDF

HGT1S12N60B3S9A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G12N60b3 Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A Text: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	PDF	HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
HGT1S12N60B3S Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60 Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60
Untitled Abstract: No abstract text available Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. TA49171.
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
G12N60 Abstract: 4410 mosfet G12N60b3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 TA49171 Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	Original	PDF	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60 4410 mosfet G12N60b3 HGT1S12N60B3S9A HGTP12N60B3D TB334 TA49171
G12N60B3 Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60 Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the	Original	PDF	HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 150oC. 112ns 150oC TB334 G12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
717 MOSFET Abstract: No abstract text available Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the	Original	PDF	HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 150oC. 1-800-4-HARRIS 717 MOSFET