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onsemi HGTD7N60C3S9A IGBT 600V 14A TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTD7N60C3S9A	Cut Tape	2,000		1	1 $2.65 10 $1.708 100 $2.65 1000 $0.86871 10000 $0.86871	Buy Now
	HGTD7N60C3S9A	Digi-Reel	2,000		1	1 $2.65 10 $1.708 100 $2.65 1000 $0.86871 10000 $0.86871	Buy Now
	HGTD7N60C3S9A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	HGTD7N60C3S9A		5,000		273	1 - 10 - 100 - 1000 $1.2431 10000 $1.2431	Buy Now
Rochester Electronics	HGTD7N60C3S9A		5,000		1	1 $1.17 10 $1.17 100 $1.1 1000 $0.9945 10000 $0.9945	Buy Now
Rochester Electronics LLC HGTD7N60C3S9A INSULATED GATE BIPOLAR TRANSISTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTD7N60C3S9A	Bulk			249	1 - 10 - 100 - 1000 $1.22 10000 $1.22	Buy Now
Fairchild Semiconductor Corporation HGTD7N60C3S9A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	HGTD7N60C3S9A		1,079			1 $2.0008 10 $2.0008 100 $2.0008 1000 $0.8253 10000 $0.8253	Buy Now
Rochester Electronics	HGTD7N60C3S9A		249		1	1 $1.17 10 $1.17 100 $1.1 1000 $0.9945 10000 $0.9945	Buy Now
ComSIT USA	HGTD7N60C3S9A		67,816			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HGTD7N60C3S9A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HGTD7N60C3S9A		Fairchild Semiconductor	14 A, 600 V, UFS N-Channel IGBT		Original	PDF
HGTD7N60C3S9A		Intersil	14A, 600V, UFS Series N-Channel IGBTs		Scan	PDF

HGTD7N60C3S9A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G7N60C3 Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660 Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 g7n60c HGTD7N60C3S9A LD26 RHRD660	PDF
G7N60C3 Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660 Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 G7N60 g7n60c HGTD7N60C3S9A RHRD660	PDF
G7N60C3 Abstract: No abstract text available Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3	PDF
g7n60c Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660 Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC	Original	HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
G7N60 Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660 Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60 G7N60C3 G7N60C HGTD7N60C3S9A LD26 RHRD660	PDF
g7n60c Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660 Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs January 1997 Features Packaging • 14A, 600V at TC = 25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC	Original	HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660	PDF
Untitled Abstract: No abstract text available Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C	OCR Scan	HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3	PDF
G7N60C3 Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660 Text: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	OCR Scan	HGTD7N60C3S HGTP7N60C3 TA49115. HGTD7N60C3S, HGTP7N60C3 G7N60C3 g7n60c G7N60 TA49115 HGTD7N60C3S9A LD26 RHRD660	PDF