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    HGTP12N60 Search Results

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    HGTP12N60 Price and Stock

    Rochester Electronics LLC HGTP12N6001

    HGTP12N6001
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    Rochester Electronics LLC HGTP12N60A4

    IGBT 600V 54A TO-220-3
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    onsemi HGTP12N60A4

    IGBT 600V 54A TO-220-3
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    Win Source Electronics HGTP12N60A4 5,200
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    onsemi HGTP12N60C3

    IGBT 600V 24A TO-220-3
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    FLIP ELECTRONICS HGTP12N60C3D

    IGBT 600V 24A TO-220-3
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    DigiKey HGTP12N60C3D Tube 400
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    Find more HGTP12N60 price and stock on Findchips.com

    HGTP12N60 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTP12N60A4 Fairchild Semiconductor 600 V, SMPS N-Channel IGBT Original PDF
    HGTP12N60A4 Fairchild Semiconductor 600V SMPS Series N-Channel IGBT Original PDF
    HGTP12N60A4 Intersil 600V, SMPS Series N-Channel IGBT Original PDF
    HGTP12N60A4D Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60A4D Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60A4D Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60A4D_NL Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60B3 Fairchild Semiconductor 27A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTP12N60B3 Fairchild Semiconductor 27A, 600V, UFS N-Channel IGBT Original PDF
    HGTP12N60B3 Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP12N60B3 Intersil 27A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTP12N60B3 Intersil Obsolete Product Datasheet Scan PDF
    HGTP12N60B3 Intersil 27 A, 600V, UFS Series N-Channel lGBTs Scan PDF
    HGTP12N60B3D Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60B3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP12N60B3D Intersil 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60B3D Intersil 27 A, 600V, UFS Series N-Channel lGBTs with Anti-Parallel Hyperfast Diode Scan PDF
    HGTP12N60C3 Fairchild Semiconductor 24 A, 600 V, N-Channel IGBT Original PDF
    HGTP12N60C3 Fairchild Semiconductor 24A,600V, UFS Series N-Channel IGBTs Original PDF
    HGTP12N60C3 Harris Semiconductor 24A, 600V, UFS Series N-Channel IGBTs Original PDF

    HGTP12N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    p12n60c3

    Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
    Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123 PDF

    G12N60b3

    Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
    Text: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A PDF

    IGBT 12n60a4D

    Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. IGBT 12n60a4D 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTG*N60A4D ta49337 PDF

    12n60a4

    Abstract: IGBT 12n60a4 HGT1S12N60A4S HGTG12N60A4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334
    Text: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334 PDF

    P12N60C3

    Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60
    Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the


    Original     		HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC P12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60 PDF

    g12n60d1

    Abstract: AN7254 AN7260 HGTP12N60D1
    Text: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss


    Original     		HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1 PDF

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. PDF

    p12n60c3

    Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C
    Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the


    Original     		HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 150oC. 230ns 150oC p12n60c3 S12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C PDF

    HGT1S12N60C3DRS

    Abstract: 12N60CD
    Text: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance


    Original     		HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS HGT1S12N60C3DRS 12N60CD PDF

    TB334

    Abstract: HGT1S12N60C3R HGT1S12N60C3RS HGTP12N60C3R LD26 RURP1560 TO-262AA Package equivalent
    Text: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 150oC 250ns TB334 HGT1S12N60C3R HGT1S12N60C3RS HGTP12N60C3R LD26 RURP1560 TO-262AA Package equivalent PDF

    12n60c3d

    Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
    Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    Original     		HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c3d TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188 PDF

    12N60C3

    Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
    Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12N60C3 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c PDF

    HGTP12N60B3D

    Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGTP12N60B3D 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D PDF

    TA49188

    Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
    Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    Original     		HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns TA49188 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 PDF

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGTG12N60A4D TB334 PDF

    HGT1S12N60B3S

    Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60 PDF

    12n60b3d

    Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    OCR Scan     		12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 12n60b3d 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334 PDF

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ PDF

    12n60c3

    Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D
    Text: HGTP12N60C3D, HGT1S12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		HGTP12N60C3D, HGT1S12N60C3DS TA49123. TA49188. TA4918ration 12n60c3 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D PDF

    12n60c3d

    Abstract: IGBT 12n60c3D
    Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­


    OCR Scan     		HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D PDF

    Untitled

    Abstract: No abstract text available
    Text: u a q q ic HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance


    OCR Scan     		HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS PDF

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan     		HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent PDF