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    Hi-Tech Resistors Pvt Ltd HIA H2IFS* 2KV 56R 5%

    HIA H2IFS* 2KV 56R 5%
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    Verical HIA H2IFS* 2KV 56R 5% 9,000 1,527
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    Hi-Tech Resistors Pvt Ltd HIA H2IFS*2KV 270R +/-5%

    HIA H2IFS*2KV 270R +/-5%
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    Verical HIA H2IFS*2KV 270R +/-5% 2,000 1,527
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    HIAH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sharp lt024

    Abstract: lt024 lt024* sharp LT090 amorphous silicon photodiode LT024 LASER LTO15
    Text: 1 Internal Structure of Laserx Diodes x x x x x x x x x x x Fig. Multicoating of Chip Facet To achieve hiah oDtical Dower outDut in the LT024 series, LTO1 5 series, LTO1 7 series and LT090 series, x 17-1 x x x x reflective multilayer film composed of amorphous


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    PDF LT024 LT090 sharp lt024 lt024 lt024* sharp amorphous silicon photodiode LT024 LASER LTO15

    LQ1OPX21

    Abstract: SHE25
    Text: . , ‘REPARED BY : DATE .e I APPROVED BY : SPEC No. LD8204A SHARP DATE L QUID CRYSTAL DISPLAY GROUP FILE No. ISSUE : Feb .17 .1996 PAGE : 13 pages APPLICABLE GROUP Liquid Crystal Display SHARP CORPORATION Group SPECIFICATION DEVICE SPECIFICATION FOR TFT-LCD Module


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    PDF LD8204A LQ1OPX21 LQ1OPX21 SHE25

    metal detector diagram PI

    Abstract: A760 AIA760 JUA760DM MA760
    Text: MA760 Hiah Soeed Differential Comparator FAIRCHILD A Schlum berger C om pany Linear Division C omparators Description Connection Diagram 8-Lead Metal Package Top View The /¿A760 is a differential voltage com parator offering considerable speed im provem ent over the /aA710 family


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    PDF MA760 /aA710 juA760 metal detector diagram PI A760 AIA760 JUA760DM

    RC144DPI-D

    Abstract: RC96DPi-D diode OA 71 DD300N RC96ATI ROCKWELL "eye pattern generator"
    Text: RC144ATI Rockwell RC144ATÌ Desktop Integrated Hiah Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi desktop integrated data/fax/voice modem device set families support US or world-wide operation over a dial-up telephone line.


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    PDF RC144ATI RC144ATÌ RC144ATi) 6550A-UART J22198 RC144DPI-D RC96DPi-D diode OA 71 DD300N RC96ATI ROCKWELL "eye pattern generator"

    Untitled

    Abstract: No abstract text available
    Text: High Precision Operational Amplifier MM1278 M ITSUM I Hiah Precision Operational Âmoiifier Monolithic IC M M 1 278 This IC is a dual-type operational amplifier, with tw o built-in operational amplifiers, and achieves extremely low offset voltage with a single power supply. The input offset voltage and the input offset voltage


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    PDF MM1278 100ki2 10ki2

    Untitled

    Abstract: No abstract text available
    Text: ECL10KH * V l ' n Hiah-Soeed • »» »■ ■ » I 1« « Em itter-Coupled Logic Fam ily 1 1 /^ 4 A lw i\# ■ U 4 - I PRELIMINARY | in f o r m a t io n A 4 This docum ent contains spe! cifications and inform ation ■ Quad OR/NOR Gate


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    PDF ECL10KH MC10H101 TheMC10H101 50-ohm

    m510

    Abstract: M51008A m5m51008afp
    Text: MITSUBISHI LS Is M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 51008A FP , VP. RV are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 131072 w ord by 8 - b i t which are fabricated usina hiah - performance triple polysilicon CMOS


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    PDF M5M51008AFP RV-85VL -85VLL 1048576-BIT 131072-WORD 1008A m510 M51008A

    IRFK2D450

    Abstract: IR E78996 IRFK2F450
    Text: Bulletin E2794 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • Hiah Current Capability, J UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. v F Description -The HEX-pak™ utilises the well-proven HEXFET™ die, combining


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    PDF E2794 IRFK2D450 IRFK2F450 E78996. O-240 sensitive250 IRFK2D450JRFK2F450 IR E78996

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N4405* PNP Silicon Small-Signal Transistor c k y s t a io n c s 2805 Veterans Hiahwav d e s i g n e d fo r g e n e r a l- p u r p o s e s w it c h in g a n d a m p lif ie r a p p lic a t io n s . S u / f 74 Ronkorkoma, N.Y. 1177u


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    PDF 2N4405* 1177u

    LT3350

    Abstract: a42e
    Text: Hiah Resolution LED Arrays SHARP CORP S1E » m f l l f l OTTf l DD0 7 5 0 b 7flM M S R P J 101-Dot High Resolution LT3350 I Model No. LT3350 Red LT3350 LED Array GaAsP I Features 1. 101-dot array 2. Dynamic drive type 3. Directly visible, 1.52mm in width Unit: mm


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    PDF LT3350 LT3350 101-Dot 00075D 110X110 a42e

    G001S

    Abstract: No abstract text available
    Text: H igh Perform ance 256K.X 16 CMOS DRAM H AS4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e


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    PDF AS4C256K16F0 2S6KX16 4C256K16F0-50) 40-pin S4CZ56K16F0-60JC 16F0-50TC l-30002-A. G001S

    Untitled

    Abstract: No abstract text available
    Text: MA715QB Hiah Soeed Operational Amplifier FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 10-Lead Can Top View The mA715QB is a high speed, high gain, monolithic oper­


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    PDF MA715QB MIL-STD-883 10-Lead mA715QB /jA715QB juA715QB

    Fairchild uA711

    Abstract: No abstract text available
    Text: juA711 Dual Hiah SDeed Differential Comparator FAIRCHILD A S chlum berger C om pany Linear Division Com parators Connection Diagram 10-Lead Metal Package Top View Description The /uA711 is a dual high speed differential com parator featuring high accuracy, fast response times, large input


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    PDF juA711 10-Lead /uA711 juA711C /iA711 Fairchild uA711

    CB20

    Abstract: No abstract text available
    Text: 9111 Series H.D. 2.0mm 0.079" Futurebus(+)5 Row s Shroud □upi in Material: Housing: High Temperature Plastic UL94V-0. Electrical Characteristics: Operating Temperature: -65°C ~+125°C. Features: * 2mm hiah density futurebus+ male shroud. * Available pin count from 30-390.


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    PDF UL94V-0. CB20H3: CB20

    Untitled

    Abstract: No abstract text available
    Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­


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    PDF bq4850Y 512Kx8 304-bit 32-pin

    CAD15-CAD8

    Abstract: No abstract text available
    Text: PCI1250A PC CARD CONTROLLER XCPS014 -D E C E M B E R 1997 * Peripheral Component Interconnect PCI Power Management Compliant • Supports Zoom Video With Internal Buffering • ACP11.0 Compliant • Programmable Output Select for CLKRUN • Packaged in 256-Pin BGA


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    PDF PCI1250A XCPS014 256-Pin 82365SL-DF 16-Bit on1997 S-PBGA-N256) 4040185/A CAD15-CAD8

    Untitled

    Abstract: No abstract text available
    Text: MTE Advance Information D • SöböMSb D GG2G5 3 3f l b ■ lllir n lll MNHS January 1991 NATRA M H S M 67202 HI-REL DATA SHEET 1kX 9 CMOS PARALLEL FIFO FEATURES EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE RETRANSMIT CAPABILITY BI-DIRECTIONAL APPLICATIONS


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    PDF QQQ2Q72

    srm2264lct

    Abstract: No abstract text available
    Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


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    PDF SRM2264LTio/i2 64K-BIT SRM2264Lio/i2 SRM2264LTio 100ns SRM2264LT 120ns SRM2264LTio/i2 28-pin srm2264lct

    Untitled

    Abstract: No abstract text available
    Text: electronic June 1992 M 67203 HI-REL DATA SHEET 2k X 9 CMOS PARALLEL FIFO FEATURES . FIRST-IN FIRST-OUT DUAL PORT MEMORY . FAST ACCESS TIME : 35 TO 55 ns . . EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY


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    PDF

    S9900

    Abstract: AMI 9900 FAMILY 89980 DI-22 IC2 Bus Addresses S9980A S9981 W-15 TF 745-A 02E-08
    Text: PRELIMINARY DATA SHEET S9980A/S9981 AMERICAN MICROSYSTEMS, INC. 16-BIT MICROPROCESSOR Features □ □ □ □ □ □ □ □ □ □ □ □ 16-Bit In stru ctio n W o rd F u ll M inicom pu ter In stru ctio n Set C a p ab ility In c lu d in g M u ltip ly and D ivid e


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    PDF S9980A/S9981 16-BIT 40-Pin S9980A S9981 0320-033F 0780-07FF S9900 AMI 9900 FAMILY 89980 DI-22 IC2 Bus Addresses W-15 TF 745-A 02E-08

    KM681001-25

    Abstract: KM681001-20 KM681001-35 tl2245 KM681001
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)


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    PDF KM681001 KM681001-20 KM681001-25 KM681001 KM681001P: 32-DIP-400 32-SQJ-400 576-bit KM681001-20 KM681001-35 tl2245

    MR27V3266D

    Abstract: LA5A6
    Text: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by


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    PDF MR27V3266D MR27V3266D 32Mbit x16bit x32bit 66MHz 50MHz LA5A6

    KM68V257CP15

    Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
    Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)


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    PDF KM68V257C 32Kx8 KM68V257C-15 KM68V257C-17 KM68V257C-20 KM68V257CP 28-DIP-300 KM68V257CJ 28-SOJ-300 KM68V257C KM68V257CP15 KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


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    PDF KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory