2SD1258
Abstract: No abstract text available
Text: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering
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2SD1258
100-c
2SD1258
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D2158
Abstract: 2SD2158 2SD2158A 5d215
Text: Power T ransisto 1,^38054 GG113Ô7 mb • P N C 2 SD2158, 2SD2158A 2SD2158, 2SD2158A Silicon NPN Triple-Diffused Planar Type High DC Current Gain Iife , Power Amplifier ■ Features • High DC current gain (Hfe) • Good linearity of DC current gain (hFE)
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GG113Ã
5D2156,
2SD2158A
2SD2158,
2SD2158
D2158
2SD2158A
5d215
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2SD1834
Abstract: T100
Text: 2SD1834 Transistors Medium Power Transistor 60V, 1A 2SD1834 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0
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2SD1834
2SD1834
T100
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2SD1834
Abstract: No abstract text available
Text: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit
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2SD1834
R1010A
2SD1834
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2SD1834
Abstract: T100 05 marking code transistor ROHM
Text: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit
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2SD1834
R1010A
2SD1834
T100
05 marking code transistor ROHM
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2SC3616
Abstract: 200F NEC PA33 nec 200f
Text: NPN SILICON TRANSISTOR 2SC3616 DESCRIPTION The 2SC3616 is designed fo r general-purpose applications requiring High DC Current Gain. This is suitable fo r all kind of driving, instead of Darlington Transistor, or muting. FEATURES • High DC Current Gain.
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2SC3616
2SC3616
200F NEC
PA33
nec 200f
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2SD1834
Abstract: No abstract text available
Text: Medium Power Transistor 60V, 1A 2SD1834 Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. Dimensions (Unit : mm) MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit
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2SD1834
R1010A
2SD1834
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2SD2120
Abstract: No abstract text available
Text: Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions • Darlington connection Contains bias resistance, damper diode . · High DC current gain. · Less dependence of DC current gain on temperature.
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EN3239
2SD2120
2SD2120]
2SD2120
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )
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2SD1259,
2SD1259A
2SD1259
001bb47
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2SD111
Abstract: 2SD1776 2SD1776A
Text: 2SD1776, 2SD1776A P o w e r T ra n s is to rs 2SD1776, 2SD1776A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain h FE , Package Dim ensions Power A m plifier • Features • High DC current gain (hn;) • Good linearity of DC current gain (hi E)
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2SD1776,
2SD1776A
2SD1776
2SD1776A
2SD1772/A)
2SD111
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Untitled
Abstract: No abstract text available
Text: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS
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ST13007
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2SD1755
Abstract: VUO60
Text: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)
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2SD1755
2SD1747/A)
2SD1755
VUO60
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2SD1774
Abstract: 2SD1774A LTO 100 F
Text: Power Transistors 2SD1774, 2SD1774A 2 S D 1 7 7 4 , 2SD1174A Silicon N P N Trip le-D iffu sed Planar Type High DC C urrent Gain Package D im ensions Power A m plifier Ii f e , U n it ! mm • Features 10-5 ± 0 ,5 • High DC current gain (hFE) s • Good linearity of DC current gain
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2SD1774,
2SD1774A
2SD1174A
2SD1774
2SD1774_
2SD1774A~
2SD1770/A)
2SD1774A
LTO 100 F
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2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
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2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
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2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
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2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
100mV
2SD2144S
SC-72
T146
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2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
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2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
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2SD2120
Abstract: No abstract text available
Text: Ordering number: EN 3239 2SD2120 No.3239 SA I YO NPN Epitaxial Planar Silicon Transistor i General Driver Applications F eatures •Darlington connection Contains bias resistance, damper diode • High DC current gain *Less dependence of DC current gain on temperature
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2SD2120
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TF-450
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching
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ZTX1047A
NY11725
JS70S7Ã
TF-450
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e50p
Abstract: 2SB1639 2SD2318
Text: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.
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2SD2318
2SB1639.
SC-63
100ms
e50p
2SB1639
2SD2318
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B13007D
Abstract: JESD97 STB13007DT4 T0-263
Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode
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STB13007DT4
T0-263)
2002/93/EC
B13007D
JESD97
STB13007DT4
T0-263
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Untitled
Abstract: No abstract text available
Text: Ordering num ber:E N 2 5 0 7 _ 2SD1953 NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers Features . Darlington connection . High DC current gain . Low dependence of DC current gain on temperature
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2SD1953
20V/1
100jiA
4227TA
M507-1/3
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Untitled
Abstract: No abstract text available
Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode
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STB13007DT4
T0-263)
2002/93/EC
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freewheeling diode 5A
Abstract: B13007D JESD97 STB13007DT4 T0-263
Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode
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STB13007DT4
2002/93/EC
T0-263)
freewheeling diode 5A
B13007D
JESD97
STB13007DT4
T0-263
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Untitled
Abstract: No abstract text available
Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)
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2SD2114K
500mA
SC-59
R1120A
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