HIGH FREQUENCY SILICON OSCILLATOR Search Results

HIGH FREQUENCY SILICON OSCILLATOR Result Highlights (5)

Part	Manufacturer	Description
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

HIGH FREQUENCY SILICON OSCILLATOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF5160 Abstract: F5160 MRF*5160 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial	OCR Scan	F5160 MRF3866 MRF5160 MRF5160 F5160 MRF*5160	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.	OCR Scan	MRF313 56-590-65/4B VK200-20/4B MRF313	PDF
transistor c5 Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor Text: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.	Original	2N3866 transistor c5 transistor c3-12 c4 ic rf amplifier high frequency transistor	PDF
2N3866A Abstract: 2n3866 Transistor 2N3866 Text: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.	Original	2N3866 2N3866A 28-April Transistor 2N3866	PDF
2M4427 Abstract: TRANSISTOR 2SC 635 Text: 7 = 3 /- 2 3 MOTOROLA SC XSTRS/R F 4bE D b3b7ES4 00T404S <4 H I I O T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Lin e 1 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, frequency multiplier, or oscillator	OCR Scan	00T404S 2M4427 2M4427 TRANSISTOR 2SC 635	PDF
2N3866 Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55 Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains	OCR Scan	2N3866 2N4427 2N2708 2N918 BFY90 OT-23 ZTX325 zetex ztx327 Zetex bfy90 Transistor 2N3866 2N2102 BSY55	PDF
2N4036 Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427 Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details	OCR Scan	2N918 2N2708 BUY92 BUY91 BUY90 2N4036 2N4037 TP-39 TRANSISTOR BC140 transistor 2N2219 ZT Ferranti 2N2102 2N2405 2N3866 2N4427	PDF
High frequency transistors Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91 Text: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes	OCR Scan	BFY90 175mW 2N918 2N2708 O1000 2N3571 2N3572 2N2102 2N4036 High frequency transistors RF diodes 2n3570 ZT92 2N4036 ZT91	PDF
2N5177 Abstract: No abstract text available Text: SGI Silicon Group Inc. 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . ^Output power: 20 watt (typ) 100 - 500 MHz Frequency range:	OCR Scan	2N5177 2N5177	PDF
2N3866A Abstract: Transistor 2N3866 2N3866 RF 2N3866 15-September Text: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.	Original	2N3866 2N3866A 2N3866 2N3866A Ju20mA 2N3866) 2N3866A) 360mA 200MHz Transistor 2N3866 RF 2N3866 15-September	PDF
to106 Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v Text: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating	Original	NTE108 NTE108-1 NTE108 200MHz -20dB) 500MHz to106 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v	PDF
2SC2217 Abstract: 2SC2367 NE21935 Ic 9148 Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up	OCR Scan	NE21900 NE21903 NE21908 NE21935 NE219 NE21900) S12S21\| NE21900, E21903, E21908, 2SC2217 2SC2367 NE21935 Ic 9148	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA M R F5943 The RF Line DIE SOURCE SAME AS 2N5943 N PN S ilico n High Frequency Tran sistor Iq = 400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial	OCR Scan	F5943 IS21P 2N5943 IS21I2	PDF
oscillatore 1ghz Abstract: NTE108 NPN Transistor TO92 Text: NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise	Original	NTE108 NTE108 140kHz 60MHz 200MHz 500MHz oscillatore 1ghz NPN Transistor TO92	PDF

STCL1100 Abstract: STCL1120 STCL1160 Text: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby current ■ Push-pull, CMOS compatible frequency	Original	STCL1100 STCL1120 STCL1160 OT23-5L STCL1160	PDF
NEC 10F Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.	OCR Scan	devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book	PDF
RF POWER TRANSISTOR NPN 3GHz Abstract: NTE2662 S21E Text: NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high	Original	NTE2662 NTE2662 RF POWER TRANSISTOR NPN 3GHz S21E	PDF
transistor tic 2250 Abstract: tic 2250 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRFQ17 The RF Line DIE S O U R C E SA M E AS BFQ17 IMPN Silicon High Frequency Transistor lc = 300 m A S U R F A C E M OUNT HIGH FR EQ U EN C Y TR AN SISTO R NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial	OCR Scan	MRFQ17 BFQ17 transistor tic 2250 tic 2250	PDF
2n4427 MOTOROLA Abstract: 2N4427 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use	OCR Scan	2N4427 2n4427 MOTOROLA 2N4427	PDF
High frequency silicon oscillator Abstract: STCL1120 STCL1100 STCL1160 13337 Text: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby	Original	STCL1100 STCL1120 STCL1160 OT23-5L High frequency silicon oscillator STCL1160 13337	PDF
high frequency transistor Abstract: No abstract text available Text: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: • POSC = 630 mW Typical at 7.5 GHz	Original	2SC2951 2SC2951 high frequency transistor	PDF
STCL1100 Abstract: STCL1120 STCL1160 Text: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby	Original	STCL1100 STCL1120 STCL1160 OT23-5L STCL1160	PDF
Untitled Abstract: No abstract text available Text: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Not recommended for new design Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby	Original	STCL1100 STCL1120 STCL1160 OT23-5L	PDF
high frequency transistor Abstract: S21C2 Text: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization	Original	ASI10819 S21C2 high frequency transistor S21C2	PDF

HIGH FREQUENCY SILICON OSCILLATOR Search Results

HIGH FREQUENCY SILICON OSCILLATOR Result Highlights (5)

HIGH FREQUENCY SILICON OSCILLATOR Datasheets Context Search

MRF5160

Untitled

transistor c5

2N3866A

2M4427

2N3866

2N4036

High frequency transistors

2N5177

2N3866A

to106

2SC2217

Untitled

oscillatore 1ghz

STCL1100

NEC 10F

RF POWER TRANSISTOR NPN 3GHz

transistor tic 2250

2n4427 MOTOROLA

High frequency silicon oscillator

high frequency transistor

STCL1100

Untitled

high frequency transistor