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    HIGH POWER DIODE AXIAL GAAS Search Results

    HIGH POWER DIODE AXIAL GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    LBEE5ZZ2XS-846 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH POWER DIODE AXIAL GAAS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		TSML1000, TSML1020, TSML1030, TSML1040 TSML1020 TSML1000 TSML1030 TEMT1000 J-STD-020 PDF

    smd diode GW

    Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
    Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 smd diode GW TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode, PDF

    Untitled

    Abstract: No abstract text available
    Text: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 PDF

    smd diode GW

    Abstract: No abstract text available
    Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 smd diode GW PDF

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N PDF

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode PDF

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090 PDF

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent PDF

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 PDF

    L0242

    Abstract: No abstract text available
    Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C


    OCR Scan     		LD242 BP103, BPX63 E7800" L0242 L0242 PDF

    triac zd 607

    Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
    Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes


    Original     		The32-246622 H1-O03EA0-0510020NM triac zd 607 transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A PDF

    pin diode gamma detector

    Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
    Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6


    OCR Scan     		OT-23 OT-23 OT-143 MA4T6365XX pin diode gamma detector Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes PDF

    J920

    Abstract: BP103
    Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime


    OCR Scan     		LD242 BP103, BPX63 CT018) LD242 -LE78MM J920 BP103 PDF

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M PDF

    Untitled

    Abstract: No abstract text available
    Text: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location


    OCR Scan     		023Sbà LD242 PDF

    BPX63

    Abstract: ld242
    Text: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )


    OCR Scan     		LD242 BP103, BPX63 LD242 -LE7800f> -ME7800< BPX63 PDF

    Untitled

    Abstract: No abstract text available
    Text: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings


    OCR Scan     		LD242 PDF

    Untitled

    Abstract: No abstract text available
    Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process


    OCR Scan     		LD242 GET06625 BP103, BPX63, SFH464, SFH483 0HSD1S37 /lE100mA 0H801037 PDF

    CE109

    Abstract: No abstract text available
    Text: OSE-2W4 INFRARED EMITTING DIODE The OSR-2W4 is a axial lead type infrared emitting diode is made with GaAlAs/GaAs substrate LED die. DIMENSIONS Unit: m/m .Ui01. FEATURES • High Luminous intensity 2 A5±0.1 WATER CLEAR 7 /TIN P LA T IN G TIN PLA T IN G \


    OCR Scan     		PDF

    MEXICO LF 2A 250V 313 FUSE

    Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
    Text: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and


    Original     		EC102-A MEXICO LF 2A 250V 313 FUSE MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv PDF

    GaAs 850 nm Infrared Emitting Diode

    Abstract: No abstract text available
    Text: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process Operating and Storage Temperature Range T0 p. Ts tg . -40° Junction Temperature (Tj) Reverse Voltage (VR) .


    OCR Scan     		PDF

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159 PDF

    SFH4057

    Abstract: No abstract text available
    Text: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Long Lifetime Operating and Storage Temperature Range Tqp, Tstq .-40° to +80°C Junction Temperature ( T j) .80°C


    OCR Scan     		PDF