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    HIGH POWER SUITABLE X-BAND AMPLIFIER Search Results

    HIGH POWER SUITABLE X-BAND AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER SUITABLE X-BAND AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X-band Gan Hemt

    Abstract: FMA3015 MIL-HDBK-263 9-GHz
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 52mmx3 FMA3015 FMA3015-000 FMA3015-000SQ FMA3015-000S3 DS081118 FMA3015-000SB X-band Gan Hemt MIL-HDBK-263 9-GHz

    X-band Gan Hemt

    Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
    Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090727 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip

    Untitled

    Abstract: No abstract text available
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 fma3010
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090612 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 D20BT470K1EX
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 D20BT470K1EX

    CHA6105

    Abstract: monolithic amplifier MAR monolithic amplifier MAR-6
    Text: CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA6105 is a monolithic three-stage medium power amplifier designed for X band applications. This device is suitable for systems requiring a high compression level.


    Original     		PDF CHA6105 8-12GHz CHA6105 8-12GHz 700mA DSCHA61059090-31 monolithic amplifier MAR monolithic amplifier MAR-6

    RF7301

    Abstract: RF7302 RF7304 RF1136 RF730x RF1126 RF2815 RF730 RF1450 QFN footprint
    Text: RFMD. CDMA Front End Portfolio The CDMA mobile device marketplace provides many opportunities for front end suppliers to participate in this stable and growing market. The ongoing transition from voice-centric RF730x Family CDMA power amplifiers, high performance, ease


    Original     		PDF RF730x RF2815 RF1450 16-pin RF7301 RF7302 RF7304 RF1136 RF1126 RF2815 RF730 RF1450 QFN footprint

    fca173

    Abstract: BA891 Philips DC Power Amplifier 380 CGY2014TT HTSSOP20 Philips DATA Handbook system
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Apr 11 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES GENERAL DESCRIPTION


    Original     		PDF CGY2014TT CGY2014TT 403506/01/pp16 fca173 BA891 Philips DC Power Amplifier 380 HTSSOP20 Philips DATA Handbook system

    Power Amplifier GSM

    Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave


    Original     		PDF CGY2015 CGY2015 HVQFN16 SCA74 403506/01/pp24 Power Amplifier GSM smd transistor A1 HB SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier

    fca173

    Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES


    Original     		PDF CGY2014TT CGY2014TT 403506/02/pp16 fca173 h2lb FCA175 BA891 philips rf manual HTSSOP20

    smd diode HB

    Abstract: BA891 CGY2014ATW HTSSOP20 philips application
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION


    Original     		PDF CGY2014ATW CGY2014ATW 403506/01/pp12 smd diode HB BA891 HTSSOP20 philips application

    Untitled

    Abstract: No abstract text available
    Text: NJM2585 WIDE BAND 3-INPUT 1-OUTPUT 3-CIRCUIT VIDEO AMPLIFIER pGENERAL DESCRIPTION The NJM2585 is a wide band 3-input 1-output 3-circuit video amplifier. It is suitable for Y, Pb, and Pr signal because frequency range is 50MHz. The NJM2585 is suitable for AV receiver, STB, and other high


    Original     		PDF NJM2585 NJM2585 50MHz. NJM2585L 50MHz SDIP22 100KHz NJM2586

    BGY280

    Abstract: ldc15 HVSON10 PCF5079 PCF5079HK PCF5079T TSSOP10 Murata SFG LDC15H180J1747 1PS79SB62
    Text: INTEGRATED CIRCUITS DATA SHEET PCF5079 Dual-band power amplifier controller for GSM, PCN and DCS Product specification File under Integrated Circuits, IC17 2001 Nov 21 Philips Semiconductors Product specification Dual-band power amplifier controller for GSM, PCN and DCS


    Original     		PDF PCF5079 SCA73 403506/01/pp28 BGY280 ldc15 HVSON10 PCF5079 PCF5079HK PCF5079T TSSOP10 Murata SFG LDC15H180J1747 1PS79SB62

    logic control of conveyor

    Abstract: TDA9886 X7253D ALL BAND TV TUNER IC dvb SSOP16 TDA9888TS TDA9889TS analog tv demodulator TDA9888
    Text: INTEGRATED CIRCUITS DATA SHEET TDA9888TS; TDA9889TS DVB selective AGC amplifier Product specification Supersedes data of 2002 Oct 23 2004 Nov 02 Philips Semiconductors Product specification DVB selective AGC amplifier TDA9888TS; TDA9889TS • Tuner Automatic Gain Control TAGC detector for


    Original     		PDF TDA9888TS; TDA9889TS TDA9886) SCA76 R25/03/pp22 logic control of conveyor TDA9886 X7253D ALL BAND TV TUNER IC dvb SSOP16 TDA9888TS TDA9889TS analog tv demodulator TDA9888

    AN96051

    Abstract: OM5801 LQFP 48 Package Box OQ2538HP LQFP48 OQ2538HP OQ2538U capa safety CGY2100 136E05
    Text: INTEGRATED CIRCUITS DATA SHEET OQ2538HP; OQ2538U SDH/SONET STM16/OC48 main amplifiers Product specification Supersedes data of 1998 Oct 14 File under Integrated Circuits, IC19 2000 Sep 29 Philips Semiconductors Product specification SDH/SONET STM16/OC48 main amplifiers


    Original     		PDF OQ2538HP; OQ2538U STM16/OC48 OQ2538HP 403510/03/pp28 AN96051 OM5801 LQFP 48 Package Box OQ2538HP LQFP48 OQ2538U capa safety CGY2100 136E05

    article.

    Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
    Text: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the


    Original     		PDF

    OQ2538HPB-S

    Abstract: LQFP 48 Package Box OQ2538HP SMA diode marking BP 83291
    Text: INTEGRATED CIRCUITS DATA SHEET OQ2538HP; OQ2538U SDH/SONET STM16/OC48 main amplifiers Product specification Supersedes data of 1998 Oct 14 File under Integrated Circuits, IC19 2000 Sep 29 Philips Semiconductors Product specification SDH/SONET STM16/OC48 main amplifiers


    Original     		PDF OQ2538HP; OQ2538U STM16/OC48 LQFP48 OQ2538U/S1 OQ2538U OQ2538HPB-S LQFP 48 Package Box OQ2538HP SMA diode marking BP 83291

    bgy284e

    Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
    Text: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with


    Original     		PDF BGY284E UAA3587E BGY284E, 1800/1ly. BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587

    ErFA11032

    Abstract: 100-240VAC ErFA11 optical fiber DSF 2 Wavelength Laser Diode erfa amplifier 2606 APC 2010 1480nm optical amplifier automatic pump CONTROL
    Text: Data Sheet ErFA 11000 Series Mar. 2010 Desktop type Erbium doped fiber amplifier Applications z Suitable for lab applications, test-bed experiments z C-band z L-band Product type: ErFA 11021B,11022,11023, 11031B,11032,11101, 11501,11053 Descriptions ErFA11000 series are desktop type Erbium doped fiber amplifiers EDFAs for


    Original     		PDF 11021B 11031B ErFA11000 1480nm 980nm P10CA750-04 ErFA11032 100-240VAC ErFA11 optical fiber DSF 2 Wavelength Laser Diode erfa amplifier 2606 APC 2010 1480nm optical amplifier automatic pump CONTROL

    SKY77778-51

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77778-51 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz , and TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz), AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE) The SKY77778-51 Power Amplifier Module (PAM) is a fully matched, 10-pad surface mount (SMT)


    Original     		PDF SKY77778-51 10-pad

    uPG101

    Abstract: internal circuit diagram of choke G100B 101B ICL7660 mmic n5 UPG101B
    Text: A r p . i CA TION NO TE APPLICATION THE WIDE BAND AM PLIFIERS /¿PG1 00B/^PG101B NOTE 1. GENERAL juPG100B/101 B is the GaAs MMIC GaAs Microwave Monolithic Integrated Circuit developed as the low noise wide band amplifier/medium power wide band amplifier.


    OCR Scan     		PDF uPG100B uPG101B juPG100B/101 jUPG101 1987M uPG101 internal circuit diagram of choke G100B 101B ICL7660 mmic n5

    KDS0B

    Abstract: kds-0b s150t
    Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER SLWS041 - D ECE M B ER 1997 I • Low-Noise Amplifier for Each Band • • I • RF Mixer for Each Band With Image Rejection Configuration for High Band Suitable for Portable Dual-Band/Dual-Mode Cellular Telephones IS136


    OCR Scan     		PDF TRF1500 SLWS041 IS136) 48-Pin 800-MHz 1900-MHz KDS0B kds-0b s150t

    Untitled

    Abstract: No abstract text available
    Text: TRF1500 DUAL-BAND/DUAL-MODE PCS RECEIVER ^ • • • • _ SLWSQ41A-JANUARY 1998 Low-Noise Amplifier for Each Band RF Mixer for Each Band With Image Rejection Configuration for High Band IF Amplifier for Both Low and High Bands


    OCR Scan     		PDF TRF1500 SLWSQ41A-JANUARY IS136) 48-Pin 800-MHz 1900-M F1500