High Voltage 8 and 16 Amp
Abstract: HVSSeries
Text: Product Brief High Voltage 8 and 16 Amp Schottky Rectifier Series CSHD8 Series 8 Amp 60V, 100V and 200V in the DPAK package CSHDD16 Series (16 Amp) 40V thru 200V Dual Common Cathode in the D2PAK package Typical Electrical Characteristics Central Semiconductor’s CSHD8 series (8 Amp)
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CSHDD16
High Voltage 8 and 16 Amp
HVSSeries
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KVA-500
Abstract: SB98107 4530 bussmann
Text: Bussmann Buss High Voltage Fuses HV Series 1000 - 10,000 Volts HVA 1000 Volts Amps 1/16 1/8 1/4 1/10 2/10 3/10 3/8 1/2 CATALOG SYMBOL: HVA, HVB, HVJ, HVL, HVR, HVT, HVU, HVW, AND HVX NON-TIME DELAY 1000 TO 10,000 VOLTS • Non-Time Delay fuses for high voltage instruments and circuits.
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SB98107
KVA-500
SB98107
4530 bussmann
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LQFP32
Abstract: LQFP44 ST72324BL
Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application
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ST72324BLxx-Auto
10-bit
LQFP32
LQFP44
16-bit
ST72324BL
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sinus inverter 12V -230V
Abstract: SCT 280 Digital TV transmitter receivers block diagram electromagnetic pulse generator kit icp multiplexer 24 pin MCC 4D mcc 95 08101b scr speed control dc motor TRANSISTOR BC 187 LQFP32
Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application
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ST72324BLxx-Auto
10-bit
LQFP32
LQFP44
16-bit
sinus inverter 12V -230V
SCT 280
Digital TV transmitter receivers block diagram
electromagnetic pulse generator kit
icp multiplexer 24 pin
MCC 4D
mcc 95 08101b
scr speed control dc motor
TRANSISTOR BC 187
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HS-5 310
Abstract: No abstract text available
Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Preliminary Data Features ● ● ● ● ● Memories – 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with
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ST72324BLxx-Auto
10-bit
HS-5 310
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
I/O15)
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CY62157DV18
Abstract: CY62157DV20 CY62157EV18
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
I/O15)
CY62157DV20
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A
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CY62157EV18
CY62157DV18
CY62157DV20
48-ball
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Untitled
Abstract: No abstract text available
Text: Positronic Industries connectpositronic.com continued from previous page . . . 8-16 AWG [10.0-1.0mm2] removable solder and crimp power, 0.125 inch [3.18 mm] diameter straight and right angle 90° solder printed board mount, power, shielded, high voltage
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ltadb
Abstract: LTACY Marking LTC2602 BD01 LTC1661 LTC2612 LTC2622 A1 marking code amplifier
Text: LTC2602/LTC2612/LTC2622 Dual 16-/14-/12-Bit Rail-to-Rail DACs in 8-Lead MSOP U FEATURES DESCRIPTIO • The LTC 2602/LTC2612/LTC2622 are dual 16-,14- and 12-bit, 2.5V-to-5.5V rail-to-rail voltage-output DACs, in a tiny 8-lead MSOP package. They have built-in high performance output buffers and are guaranteed monotonic.
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LTC2602/LTC2612/LTC2622
16-/14-/12-Bit
2602/LTC2612/LTC2622
12-bit,
LTC2602:
16-Bits
LTC2612:
14-Bits
LTC2622:
12-Bits
ltadb
LTACY Marking
LTC2602
BD01
LTC1661
LTC2612
LTC2622
A1 marking code amplifier
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BS616LV8021
Abstract: BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608
Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BS616LV8021 DESCRIPTION FEATURES The BS616LV8021 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from
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BS616LV8021
BS616LV8021
70/100ns
au6LV8021
100ns
-40oC
R0201-BS616LV8021
BS616LV8021AC
BS616LV8021AI
100PF
BGA-48-0608
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rcf art
Abstract: CTS256 JEDEC to 243 ST LQFP32 LQFP44 LQFP64 ST72321 ST72324 jrc 2218 ST72P3
Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ Memories – 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and
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ST72325xxx-Auto
rcf art
CTS256
JEDEC to 243 ST
LQFP32
LQFP44
LQFP64
ST72321
ST72324
jrc 2218
ST72P3
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MCU24-1
Abstract: AN1709 LQFP32 LQFP44 LQFP48 LQFP64 SDIP42 ST72321 ST72324 ST72325
Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features Memories • 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and in-circuit
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ST72325xxx-Auto
16-bit
MCU24-1
AN1709
LQFP32
LQFP44
LQFP48
LQFP64
SDIP42
ST72321
ST72324
ST72325
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synergy microwave vco
Abstract: adf4150hv ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31
Text: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: 6 V to 30 V RF bandwidth to 4.4 GHz Programmable divide-by-1/2/4/8 or 16 outputs
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ADF4150HV
ADF4150HV
-220-WHHD.
32-Lead
CP-32-11)
ADF4150HVBCPZ
ADF4150HVBCPZ-RL7
EVAL-ADF4150HV-EB1Z
EVAL-ADF4150HV-EB1ZU1
synergy microwave vco
ADu7020
VCO 1ghz from synergy part no DCYS100-200-12
RF 1022 E
Top Octave Synthesizer
1.5GHZ VCO
cmos 4093
ADF4156
DB31
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BGA-48-0608
Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 DESCRIPTION FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
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BS616UV2021
BS616UV2021
70/100ns
-40oC
R0201-BS616UV2021
BGA-48-0608
BS616UV2021AC
BS616UV2021AI
BS616UV2021DC
BS616UV2021DI
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TBA 1404
Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 DESCRIPTION FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
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BS616LV2021
BS616LV2021
70/100ns
R0201-BS616LV2021
TBA 1404
BGA-48-0608
BS616LV2021AC
BS616LV2021AI
BS616LV2021DC
BS616LV2021DI
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CY62157DV18
Abstract: CY62157DV20 CY62157EV18
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V
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CY62157EV18
CY62157DV18
CY62157DV20
CY62157DV20
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Untitled
Abstract: No abstract text available
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V
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CY62157EV18
CY62157DV18
CY62157DV20
48-ball
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CY62157DV18
Abstract: CY62157DV20 CY62157EV18
Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V
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CY62157EV18
CY62157DV18
CY62157DV20
CY62157DV20
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Untitled
Abstract: No abstract text available
Text: G5RL-U/-K PCB Power Relay 16 A High Switching Current, General-purpose Latching Relay • Creepage distance 8 mm between coil and contacts. • 10 kV Impulse withstand voltage. • Ambient Operating Temperature 85°C • Suitable for TV-8 rating. SPST-NO (1a
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K265-E1-03
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Untitled
Abstract: No abstract text available
Text: G5RL-U/-K PCB Power Relay 16 A High Switching Current, General-purpose Latching Relay • Creepage distance 8 mm between coil and contacts. • 10 kV Impulse withstand voltage. • Ambient Operating Temperature 85°C • Suitable for TV-8 rating. SPST-NO (1a
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K265-E1-01
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Untitled
Abstract: No abstract text available
Text: G5RL-U/-K PCB Power Relay 16 A High Switching Current, General-purpose Latching Relay • Creepage distance 8 mm between coil and contacts. • 10 kV Impulse withstand voltage. • Ambient Operating Temperature 85°C • Suitable for TV-8 rating. SPST-NO (1a
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K265-E1-04
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