D45H1A
Abstract: 1462, TRANSISTOR
Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP D45H1A D45H1A transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage v c e o = 15V Min * High Current Power Transistors * DC Current Gain
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D45H1A
1462, TRANSISTOR
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2N6438
Abstract: 2N6338 2N6340 2N6436 2N6437
Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage
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2N6338
2N6340
2N6436
2N6437
2N6438
VCC-80V
2N6340
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2SA1513
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SA1513 Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING
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2SA1513
2SA1513
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2SA1513
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SA1513 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING PIN
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2SA1513
2SA1513
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Untitled
Abstract: No abstract text available
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
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10 amp npn power transistors
Abstract: pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833
Text: PRODUCT announcement Low VCE SAT Power Transistors in a Tiny Leadless Module CTLT853-M833 6 Amp/200V (NPN) CTLT953-M833 5 Amp/140V (PNP) TLM833 Sample Devices features available • High Voltage (200V NPN, 140V PNP) upon request. • High Current (IC = 6.0A NPN, 5.0A PNP)
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CTLT853-M833
Amp/200V
CTLT953-M833
Amp/140V
TLM833
T-223
10 amp npn power transistors
pnp 200v
Central Electronic
Central Semiconductor
datasheets 140v NPN
CTLT853-M833
CTLT953-M833
TLM833
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2SA1513
Abstract: No abstract text available
Text: JMnic Product Specification 2SA1513 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High current capability ・Low collector saturation voltage APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION
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2SA1513
2SA1513
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800V PNP
Abstract: 2SC3507 2SC3577
Text: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)
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2SG3577
2SC3507)
800V PNP
2SC3507
2SC3577
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marking codes transistors a1 sot-89
Abstract: transistor marking 551 sot-89 2STF2550 marking codes transistors sot-223 2STN2550 JESD97 P025H
Text: 2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power SOT-89 and SOT-223 packages
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2STF2550
2STN2550
OT-89
OT-223
OT-89
OT-223
2STF2550
2STN2550
marking codes transistors a1 sot-89
transistor marking 551 sot-89
marking codes transistors sot-223
JESD97
P025H
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2SB1145
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·For high current driver and power driver applications
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2SB1145
O-220F
O-220F)
-120V
2SB1145
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2SB1145
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications
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2SB1145
O-220F
O-220F)
-100A;
-120V
2SB1145
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JE253
Abstract: JE243 JE233
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —
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MJE243,
MJE253
JE253
JE243
JE233
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D45H1B
Abstract: L-033 regulator
Text: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP D45H1B D45H1B transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage V C e o = 10V Min * High Current Power Transistors
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D45H1B
L-033 regulator
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2SB1145
Abstract: TO-220f Package base driver darlington
Text: JMnic Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications PINNING PIN
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2SB1145
O-220F
O-220F)
-100A;
-120V
2SB1145
TO-220f Package
base driver darlington
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1347
2SD2029
2SB1347
2SD2029
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2SB1317
Abstract: 2SD1975
Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1317
2SD1975
2SB1317
2SD1975
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2SB825
Abstract: 2SD1061
Text: SavantIC Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter
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2SB825
O-220
2SD1061
2SB825
2SD1061
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2SB825
Abstract: 2SD1061
Text: Inchange Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter
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2SB825
O-220
2SD1061
2SB825
2SD1061
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2SC3527
Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS
Text: 2SC3527 Power Transistors 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit • Features mm 5.2max. 15.5m ax • High speed switching • High collector-base voltage V cbo • Good linearity of DC current gain ( h FF.)
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2SC3527
50/60H
2SC3527
HIGH VOLTAGE high current POWER PNP TRANSISTORS
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NTE290A
Abstract: NTE289A NTE290 NTE290AMCP NTE289AMP NTE290A PNP
Text: NTE289A NPN & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: D High Breakdown Voltage: V(BR)CEO = 80V Min D High Current: IC = 500mA D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE289A
NTE290A
500mA
400mA,
NTE289AMP
NTE289A
NTE290AMCP
NTE290A
NTE290
NTE290A PNP
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B9D TRANSISTOR
Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
Text: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR
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S8550LT1
OT--23
225mWTamb
150mA
500mA
500mA,
B9D TRANSISTOR
PNP Transistor b9d
transistor B9C
B9C transistor
PNP Epitaxial Silicon Transistor sot-23
S8550LT1
hfe pnp transistor
500ma 40v pnp
sot23/B9C transistor
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Q62702-D1337
Abstract: BDP948 BDP950 Q62702-D1335 947 SOT-223
Text: BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Type Marking Ordering Code Pin Configuration
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BDP948,
BDP950
Q62702-D1335
OT-223
Q62702-D1337
Nov-28-1996
Q62702-D1337
BDP948
BDP950
Q62702-D1335
947 SOT-223
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TIP147T
Abstract: TIP142T
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ ■ STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS GENERAL PURPOSE SWITCHING
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
O-220
TIP147T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages . • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Pin Configuration II o 1= B II
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BDP947
BDP948,
BDP950
Q62702-D1337
OT-223
Q62702-D1335
B35bQ5
D121D27
235b05
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