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    HIGH VOLTAGE PNP POWER TRANSISTOR Search Results

    HIGH VOLTAGE PNP POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE PNP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 250mm2 QW-R208-024

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz 2SA1201L-x-AB3-R 2SA1201G-x-AB3-R OT-89 QW-R204-024 QW-R208-024

    MJD200

    Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G

    MJD200

    Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


    Original     		PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175

    2SA1261

    Abstract: 2SC3157
    Text: JMnic Product Specification 2SA1261 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SC3157 APPLICATIONS ・For high voltage ,high speed and power switching applications


    Original     		PDF 2SA1261 O-220 2SC3157 O-220) -100V; 2SA1261 2SC3157

    NTE14

    Abstract: "PNP Transistor" TRANSISTOR pc 135
    Text: NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		PDF NTE14 750mW 100mA 500mA, NTE14 "PNP Transistor" TRANSISTOR pc 135

    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications


    Original     		PDF 2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T

    PBHV8115Z

    Abstract: PBHV9115Z SC-73 MARKING CODE SMD IC
    Text: PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9115Z OT223 SC-73) PBHV8115Z. AEC-Q101 PBHV9115Z PBHV8115Z SC-73 MARKING CODE SMD IC

    TRANSISTOR SMD MARKING CODE 108

    Abstract: PBHV9215Z V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72
    Text: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9215Z OT223 SC-73) PBHV8215Z. AEC-Q101 PBHV9215Z TRANSISTOR SMD MARKING CODE 108 V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72

    2SA1020

    Abstract: 2SC2655 2sc2655 SOT
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 OT-89 250mm2 QW-R208-021 2SC2655 2sc2655 SOT

    2SA1513

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1513 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High current capability ・Low collector saturation voltage APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2SA1513 2SA1513

    transistors bf

    Abstract: UL 821
    Text: BF 821, BF 823 High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max


    Original     		PDF OT-23 O-236) UL94V-0 transistors bf UL 821

    Untitled

    Abstract: No abstract text available
    Text: STA3073F PNP Silicon Transistor Applications PIN Connection • Power amplifier application  High current switching application Features  :  : High collector breakdown voltage VCEO=-120V Low collector saturation voltage VCE sat =-0.5V(Max.) SOT-89


    Original     		PDF STA3073F -120V OT-89 KSD-T5B032-000

    mje243 transistor

    Abstract: MJE253 MJE243 equivalent MJE243
    Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE243 MJE253 MJE243, r14525 MJE243/D mje243 transistor MJE253 MJE243 equivalent MJE243

    4030p

    Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 OT-223 4030Plaws NJT4030P/D 4030p NJT4030P NJT4030PT1G NJT4030PT3G

    pnp 500v

    Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


    Original     		PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA pnp 500v vbe 10v, vce 500v NPN Transistor NTE175

    D45H1B

    Abstract: L-033 regulator
    Text: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP D45H1B D45H1B transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage V C e o = 10V Min * High Current Power Transistors


    OCR Scan     		PDF D45H1B L-033 regulator

    Untitled

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol


    OCR Scan     		PDF KSB1022 KSD1417

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistor BFN 20 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 21 PNP


    OCR Scan     		PDF VPS05162 Q62702-F1058 OT-89 EHP00595

    Untitled

    Abstract: No abstract text available
    Text: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage


    OCR Scan     		PDF KSA1220/1220A KSC2690/KSC2690A KAS1220 KAS1220A