GAP100
Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
Text: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300
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GAP60
GAP60CS
GAP75
GAP100
GAP300
GAP300
Germanium Power Diodes
GAP75
10E-15
Germanium power
Photodiodes Germanium PIN
TO46
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VOW2201
Abstract: HCPL-2211 sop5 package
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOCOUPLERS Optoelectronics - High Speed Optocouplers in Multiple Packages High Speed High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses • Reinforced insulation
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RES4-9337-2726
VMN-SG2129-1403
VOW2201
HCPL-2211
sop5 package
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vishay 6N136
Abstract: TLP2630 application not tlp559 AVAGO 2200 A 2630 DIP8 PC9D10 mosFET K 2611 A 4503 A 4503 ic K6N135
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Optoelectronics - High Speed Optocouplers in Multiple Packages AND TEC I INNOVAT O L OGY High Speed N HN OPTOCOUPLERS O 19 62-2012 High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses
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VMN-SG2129-1205
vishay 6N136
TLP2630 application not
tlp559
AVAGO 2200
A 2630 DIP8
PC9D10
mosFET K 2611
A 4503
A 4503 ic
K6N135
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LM6629
Abstract: No abstract text available
Text: LMH6629 LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown Literature Number: SNOSB18E LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown General Description Features The LMH6629 is a high-speed, ultra low-noise amplifier designed for applications requiring wide bandwidth with high
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LMH6629
LMH6629
SNOSB18E
LM6629
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diode 1n4009
Abstract: 1N4009
Text: 1N4009 Ultra high speed diode. Working inverse voltage 25 V. 3.72 Diodes High-Speed/. Page 1 of 1 Enter Your Part # Home Part Number: 1N4009 Online Store 1N4009 Diodes Ultra high speed diode. Working inverse voltage 25 V. Transistors Integrated Circuits
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1N4009
1N4009
DO-35
com/1n4009
diode 1n4009
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vhc04
Abstract: 74HC04 74VHC04 74VHC04M 74VHC04MTC 74VHC04N 74VHC04SJ M14A M14D MTC14
Text: 74VHC04 Hex Inverter Features General Description • High Speed: tPD = 3.8ns typ. at VCC = 5V ■ High noise immunity: VNIH = VNIL = 28% VCC (min.) The VHC04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent
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74VHC04
VHC04
74HC04
74VHC04
74HC04
74VHC04M
74VHC04MTC
74VHC04N
74VHC04SJ
M14A
M14D
MTC14
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Untitled
Abstract: No abstract text available
Text: 74VHCT04A Hex Inverter Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent
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74VHCT04A
VHCT04A
74HCT04
74VHCT04A
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74VHCT04AM
Abstract: 74VHCT04AMTC 74VHCT04AMTCX 74VHCT04AMX 74VHCT04ASJ M14A M14D VHCT04A 74HCT04 74VHCT04A
Text: 74VHCT04A Hex Inverter tm Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent
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74VHCT04A
VHCT04A
74HCT04
74VHCT04A
74VHCT04AM
74VHCT04AMTC
74VHCT04AMTCX
74VHCT04AMX
74VHCT04ASJ
M14A
M14D
74HCT04
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GAP300
Abstract: 10E-15 GPD optoelectronics GAP100
Text: GPD GAP60 GAP60CS GAP75 GAP100 GAP300 High Speed InGaAs Photodiodes High Responsivity High Shunt Resistance Low Capacitance: High Speed Planar Design for High Reliability GPD Optoelectronics Corp. GPDOS00002 GAP60 GAP60CS GAP75 GAP100 GAP300 E sWBfl GAP60/CS
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GAP60
GAP60CS
GAP75
GAP100
GAP300
GPDOS00002
GAP60/CS
850nm
1300nm
1550nm
GAP300
10E-15
GPD optoelectronics
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2SK221
Abstract: DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3
Text: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode. •
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44TbBD5
2SK220Â
2SK221Â
2SK221
DIODE T25 4 io
2SK220
H241
HITACHI 2SK* TO-3
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2SK298
Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Text: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.
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G013024
2SK298
2SK299
2SK299
J-10
diode vu
J10 DIODE
HITACHI 2SK* TO-3
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2SK221
Abstract: 2SK220 H241 HITACHI 2SK* TO-3
Text: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL M O S FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.
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44TbBD5
2SK220Â
2SK221Â
2SK221
2SK220
H241
HITACHI 2SK* TO-3
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PDF
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2sk298
Abstract: 2SK299 3tb 40 Hitachi Scans-001
Text: 44<ib205 G013024 blE D IHIT4 4bT 2SK298,2SK299 HITACHI/C OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.
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G013024
2SK298
2SK299
2SK299
3tb 40
Hitachi Scans-001
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2SK299
Abstract: 2SK298 HITACHI 2SK* TO-3
Text: 44Tb2G5 G013G24 4bT • H I T 4 blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQU EN CY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. •
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2SK298
2SK299
44Tb2G5
G013G24
DD13QEb
2SK299
HITACHI 2SK* TO-3
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Untitled
Abstract: No abstract text available
Text: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED56
TIED56
Equi1218)
9L53PL375)
5J7I023S
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PDF
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Untitled
Abstract: No abstract text available
Text: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED56
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Untitled
Abstract: No abstract text available
Text: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED59
TIED59
TIED56
000D524
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PDF
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Untitled
Abstract: No abstract text available
Text: TIED56 Avalanche Photodiode Taxas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED56
TIED56
000D524
IH375)
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PDF
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2SK351
Abstract: Hitachi Scans-001 HITACHI 2SK* TO-3
Text: HH'ìbSGi G013D37 016 • H I T 4 2SK351 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II«. |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching. •
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G013D37
2SK351
Hitachi Scans-001
HITACHI 2SK* TO-3
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2SK260
Abstract: 2SK259 t7y25 HITACHI 2SK* TO-3
Text: blE D MM'JbHQS 0013Ü22 bT? • H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING . HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Con
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2SK259Â
2SK260Â
2SK260
2SK259
t7y25
HITACHI 2SK* TO-3
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PDF
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2SK399
Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.
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2SJ113
2SK399
2SJ113
44TB2
diode lo2a
GG13
J-10
Hitachi Scans-001
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PDF
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2SK351
Abstract: HITACHI 2SK* TO-3
Text: HH'ìbSGi G013D37 016 • H I T 4 2SK351 H IT AC HI / OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II« . |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching.
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g013d37
2SK351
HITACHI 2SK* TO-3
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PDF
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sj56
Abstract: No abstract text available
Text: MMTbSDS OÜIETG! 103 • H I T H blE D HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. (/c= 1M Hz) • Enhancement-Mode. • Suitable for Sw itching Regulator,
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates
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H11N1
H11N2
H11N3
ST1603
ST2028
ST2029
ST2030
ST2032
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