Untitled
Abstract: No abstract text available
Text: CNCONNECTOR High frequency connectors HIT Features ●Crimping method and shape AIT Shielding meshed wires are crimped with the N-type crimp shape, which prevents the deflection and coming off of the meshed wires. HCM ●Superb high-frequency characteristics
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CN-SAS1290
BCM-61T-4
SCM-61T-4
MP-CN-BCM61
MP-CN-SCM61
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6bb1
Abstract: No abstract text available
Text: SETS-LC ACS8515 SETS Protection Switch for Line Cards ADVANCED COMMUNICATIONS PRELIMINARY Features Description The ACS8515 is a highly integrated, single-chip solution for "hit-less" protection switching of SEC clocks from Master and Slave SETS clock cards in a
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ACS8515
100nF
ACS8515
6bb1
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Untitled
Abstract: No abstract text available
Text: HITCONNECTOR Board-to-wire HIT Features ●Multi-circuit structure, Miniaturized AIT Current products available are up to 180-circuit. Although this connector is multi-circuit, it was miniaturized by narrow pitch. The insertion force in the mating operation of one time is
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180-circuit.
SNAC3-A021T-M0
SNAC3-A031T-M0
SNAC-A061T-M2
SNAC-A081T-M2
SNAC-A091T-M2
MK/SNAC3-A021-064
MK/SNAC3-A031-064
MK/SNAC-A061-28
MK/SNAC-A081-28
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Untitled
Abstract: No abstract text available
Text: HITCONNECTOR Board-to-wire HIT Features ●Multi-circuit structure, Miniaturized AIT Current products available are up to 180-circuit. Although this connector is multi-circuit, it was miniaturized by narrow pitch. The insertion force in the mating operation of one time is
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180-circuit.
SNAC3-A021T-M0
SNAC3-A031T-M0
SNAC-A061T-M2
SNAC-A081T-M2
SNAC-A091T-M2
MK/SNAC3-A021-064
MK/SNAC3-A031-064
MK/SNAC-A061-28
MK/SNAC-A081-28
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transistor b941
Abstract: transistor b561 transistor b1416 B941 b1416 B2269 data transistor type bf 224 242557 transistor bf 244 B1321
Text: Pentium PROCESSORS AT iCOMP INDEX 735T90 610T75 MHz WITH VOLTAGE REDUCTION TECHNOLOGY SmartDie TM Product Specification Y Compatible with Large Software Base MS-DOS Windows OS 2 UNIX Y 4 Mbyte Pages for Increased TLB Hit Rate Y 32-Bit CPU with 64-Bit Data Bus
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735T90
610T75
32-Bit
64-Bit
X805025075
X805026090
AP-479
AP-480
transistor b941
transistor b561
transistor b1416
B941
b1416
B2269
data transistor type bf 224
242557
transistor bf 244
B1321
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PDF
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what is cache memory
Abstract: emcp 603EV
Text: Cache What you will Learn Cache • What are the 603ev caches? • How the caches process fetch, load, and store • What is write-through and write-back? • What is snooping? • How data cache processes a snoop hit • How to enable cache from hard reset
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603ev
what is cache memory
emcp
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catalogue
Abstract: jigo products SCR 131- 6 WJ 59 SCR 131- 6 WJ 69 SCR 131- 6 WJ 68 SCR 131- 6 WJ 60 LC1-D32 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 ST3PA
Text: JiGO PRODUCTS CATALOGUE it all began in 1987…. The founder hit upon the electrical business in 1987 in the financial hub of eastern India, Kolkata. In midst of severe competition and tough markets, their values and committment towards quality and customer service set them apart from
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JG-GV3-M06
JG-GV3-M07
JG-GV3-M08
JG-GV3-M10
JG-GV3-M14
JG-GV3-M20
JG-GV3-M25
JG-GV3-M40
JG-GV3-M63
JG-GV3-M80
catalogue
jigo products
SCR 131- 6 WJ 59
SCR 131- 6 WJ 69
SCR 131- 6 WJ 68
SCR 131- 6 WJ 60
LC1-D32
SCR 131- 6 WJ 67
SCR 131- 6 WJ 65
ST3PA
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PDF
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2454 transistor
Abstract: IN 5358 IT 245 transistor 1047 SmartDie transistor y-217 gel 335 tms 374 X8050360150 243292
Text: Preliminary Mobile Pentium Processor with MMX Technology SmartDie® Product Specification • Support for MMX™ Technology ■ Low Voltage CMOS Silicon Technology ■ Compatible with Large Software Base ■ 4 Mbyte Pages for Increased TLB Hit — MS-DOS*, Windows*, OS/2*, UNIX*
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32-Bit
64-Bit
X8050366166
X8050360150
2454 transistor
IN 5358
IT 245
transistor 1047
SmartDie
transistor y-217
gel 335
tms 374
X8050360150
243292
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PDF
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hit 215
Abstract: No abstract text available
Text: e E S A E L E R E PR HIT 1920-10 PTE 31042* 10 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Description The 1920-10 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances
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50-Ohm
1-877-GOLDMOS
1301-PTE
hit 215
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79015P
Abstract: 74HC14T ria PD6 sf hd62 xo 403 me 4Z701 KC332 R36118 ad 0803 pc dio-48
Text: Mainboard 1 of 33 HA#[3.31] 3,5 24 24 ST PCLK# SLP# INT R NMI 5 8,10 10 T CK T DO T DI T MS T RST # T PREQ# T PRDY# RS#[0.2] 24 A20M# CPU_FERR# 24 IGNNE# PW RGOOD 10 SMI# HT RDY# HIT # HITM# DEFER# 3,5 3,5 3,5 3,5 BREQ0# BPRI# BNR# HLOCK# ADS# V_CPU R579
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1000P
CORE/13A
PK/15A
I3443
1005-4R
71-31C
79015P
74HC14T
ria PD6
sf hd62
xo 403 me
4Z701
KC332
R36118
ad 0803
pc dio-48
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PDF
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a15 csa 100u 27p
Abstract: CLEVO SK TME 86 LAN-RTL8193C RA27E 74hc141 vt82c686a 78l05 so8 RTL819 VT82C694A
Text: Part 6: Schematics Part 6: Schematics 6–1 Service Manual V TT V TT 3 HA #[3.31] HA #[3.31] 3 HRE Q#[0.4] R8 20K 3,7,12 P WROK P WROK R7 AK 18 A H16 A H18 AL19 AL17 3 ADS# ADS# A N31 3 3 3 3 B RE Q0# B PRI# BNR# HLOCK# 3 3 3 HIT# HITM# DEFER# R367 330 R
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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PDF
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Untitled
Abstract: No abstract text available
Text: EbE D May 10, 1989 _ • □ES47T3 Q000177 b ■ ADVANCED ELECTRONIC P K G AEPSX256K8 STATIC RAM MODULE > > 262,144 x 8 Organization > > Double sided to maximize hit density > > Low 0.66" stand-off height suited to 0.8" card spacing > > Completely Static operation
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OCR Scan
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ES47T3
Q000177
AEPSX256K8
AEPSX256K8
88/E2/9
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PDF
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM ^ p M T R O N Preliminary Datasheet Features I On-Chip Cache Hit/Miss Comparator I Transparent DRAM Refresh During Cache Reads I Hidden DRAM Precharge During Cache Reads I Refresh Counter with Dedicated Path to DRAM Array
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OCR Scan
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DM2200EDRAM
15nsec
35nsec
2200J
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tp5n40
Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs
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b3b725H
O-204AA)
97A-01
97A-03
-fUO-30(
97A-03
O-204AE)
tp5n40
Motorola transistor 388 TO-204AA
TIC 160 D
M30TR
TP5N40E
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 ÖE D 7555015 D 0 Q 0 1 ÖS 51? I RAM DM2200EDRAM 'TT4tZ3-37 4Mbx1 EnhancedDynamic RAM r ^ M lR O IN I Preliminary Datasheet R A MT RO N CORP Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array
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DM2200EDRAM
T4tZ3-37
15nsec
35nsec
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER TRANSISTORS Sat Test Voltages Conditions V a V bì le Ubo" le V V A A ma PT TYPE NO. hit MAXIMUM RATINGS le 25-C BV cbo BVceo BV ebo V V V A Watts & b A Va V le MIN MAX SPC163-04 200 55 40 15 20 15 5 4 1.1 2.2 5 .5 25 SPC163-06 200 75 60 15 20 15 5 4
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SPC163-04
SPC163-06
SPC163-08
SPC163-10
SPC163-12
SPC163-14
SPC164-30
TWX-510-224-6582
0000M27
O-114
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PDF
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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PDF
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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OCR Scan
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DM512K64DT6/DM512K72DT6
64/512Kb
72-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ p M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ 8ns Burst Read Capability ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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OCR Scan
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DM2200EDRAM
256-byte
DM2200J
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PDF
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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OCR Scan
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DM2200EDRAM
256-byte
DM2200
DM2200J
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PDF
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write-verify
Abstract: DM2200J
Text: par Enhanced K l MemoiySystemsInc. DM 2200edram 4Ubx1GlancedDynamicRAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page
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OCR Scan
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256-byte
DM2200J
write-verify
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PDF
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Untitled
Abstract: No abstract text available
Text: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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OCR Scan
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DM2240Multibank
256-byte
Oper0J2-121
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PDF
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes
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OCR Scan
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DM2200EDRAM
256-byte
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PDF
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