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    HITACHI 2SJ50 Search Results

    HITACHI 2SJ50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ505STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -50A 22Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SJ504-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 55Mohm To-220Fm Visit Renesas Electronics Corporation
    2SJ506L-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -10A 85Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SJ506STR-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SJ505L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -50A 22Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation

    HITACHI 2SJ50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    2SJ504

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


    Original     		PDF HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141

    2SJ505

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2SJ506

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R

    2SJ506

    Abstract: Hitachi DSA0076 Hitachi 2SJ
    Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548C (Z) 4th. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.


    Original     		PDF 2SJ506 ADE-208-548C Hitachi DSA0076 Hitachi 2SJ

    2SJ504

    Abstract: ADE-208-546 Hitachi DSA00396
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM


    Original     		PDF 2SJ504 ADE-208-546 220FM 2SJ504 ADE-208-546 Hitachi DSA00396

    2SJ506

    Abstract: Hitachi DSA00347
    Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.


    Original     		PDF 2SJ506 ADE-208-548 Hitachi DSA00347

    Hitachi DSA0076

    Abstract: 2SJ505 Hitachi 2SJ
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547B (Z) 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK


    Original     		PDF 2SJ505 ADE-208-547B Hitachi DSA0076 Hitachi 2SJ

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G S


    Original     		PDF 2SJ504 ADE-208-546B 220FM D-85622 Hitachi DSA00276

    2SJ505

    Abstract: Hitachi DSA00347
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi DSA00347

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance RDS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi 2SJ Hitachi DSA002779

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi 2SJ Hitachi DSA002757

    2SJ504

    Abstract: Hitachi 2SJ Hitachi DSA002779
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance RDS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ504 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ504 ADE-208-546 2SJ504 Hitachi 2SJ Hitachi DSA002779

    2sk135

    Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
    Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.


    OCR Scan     		PDF D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48

    2SK134

    Abstract: 2SJ49 2sk134 2SK135 2SJ50 2SJ49 2SK133 hitachi 2sk135 2SJ48 2sk1 CIMI
    Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.


    OCR Scan     		PDF 2SJ48, 2SJ49, 2SJ50 D13D0Ã 2SK133 2SK134 2SK13S D13G10 2SJ49 2sk134 2SK135 2SJ50 2SJ49 hitachi 2sk135 2SJ48 2sk1 CIMI

    ADE-208-546

    Abstract: Hitachi 2SJ
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R ds o« = 0.042Q typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO—220FM


    OCR Scan     		PDF 2SJ504 ADE-208-546 220FM Hitachi 2SJ

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-547 Target specification 1st. Edition Features • Low on-resistance • Low drive current. • 4V gate drive devices. • High speed switching. R d s („ „ ) = 0.017Q typ.


    OCR Scan     		PDF 2SJ505 ADE-208-547 --25A, Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance • L o w drive current • H igh speed switching • 4 V gate drive devices. Roaon) = 0.065 Q typ. (at V GS= -1 0 V , ID = -5 A )


    OCR Scan     		PDF 2SJ506 ADE-208-548

    2SJ56 2sk176

    Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
    Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share


    OCR Scan     		PDF 2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 HITACHI 2SK1058 MOSFET

    2SJ56 2sk176

    Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
    Text: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical


    OCR Scan     		PDF 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application

    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


    OCR Scan     		PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P