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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching R07DS0483EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 92 m typ (VGS = 10 V, ID = 1.3 A)  Low drive current  High speed switching  4.5 V gate drive


    Original     		PDF HITK0302MP R07DS0483EJ0100 PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching R07DS0483EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 92 m typ (VGS = 10 V, ID = 1.3 A)  Low drive current  High speed switching  4.5 V gate drive


    Original     		PDF HITK0302MP R07DS0483EJ0100 PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HITK0302MP 30V, 2.7A, 115mmax. Silicon N Channel MOS FET Power Switching R07DS0483EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 92 m typ (VGS = 10 V, ID = 1.3 A)  Low drive current  High speed switching


    Original     		PDF HITK0302MP R07DS0483EJ0200 PLSP0003ZB-A