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    HL6360MG Price and Stock

    Ushio Opto Semiconductors Inc HL6360MG-A

    639nm / 25mW AlGaInP Laser Diode - Trays (Alt: HL6360MG-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6360MG-A Tray 12 Weeks, 6 Days 116
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.729
    • 10000 $6.9115
    Buy Now

    HL6360MG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6360MG OpNext Low Operating Current Visible Laser Diode Original PDF

    HL6360MG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


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    HL6360MG/61MG HL6360MG/61MG ODE-208-010B HL6360MG/61MG: HL6360MG HL6361MG PDF

    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE-208-010C Z Rev.3 Feb. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    HL6360MG/61MG ODE-208-010C HL6360MG/61MG HL6360MG/61MG: HL6360MG HL6361MG PDF

    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE2025-00 M Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    HL6360MG/61MG HL6360MG/61MG ODE2025-00 HL6360MG/61MG: HL6360MG HL6361MG PDF

    OCLARO

    Abstract: No abstract text available
    Text: Data Sheet HL6360MG/61MG AIGaInP Laser Diode Outline 639nm/25mW Features: • Visible light output: 639nm Typ.  Optical output power: 20mW CW  Single transverse mode  Low operating current: 65mA Typ.  Low operating voltage: 2.5V Max.  Built-in photodiode for monitoring


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    HL6360MG/61MG 639nm 639nm/25mW HL6360MG/61MG OCLARO PDF

    hl6360mg

    Abstract: HL6361MG
    Text: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for


    Original
    HL6360MG/61MG ODE-208-010 HL6360MG/61MG HL6360MG/61MG: HL6360MG hl6360mg HL6361MG PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6360MG/61MG AIGaInP Laser Diode 639nm/25mW Features: Outline • Visible light output: 639nm Typ.  Optical output power: 20mW CW  Single transverse mode  Low operating current: 65mA Typ.  Low operating voltage: 2.5V Max.  Built-in photodiode for monitoring


    Original
    HL6360MG/61MG 639nm/25mW 639nm HL6360MG/61MG PDF

    HL6360MG

    Abstract: HL6361MG
    Text: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    HL6360MG/61MG ODE-208-010B HL6360MG/61MG HL6360MG/61MG: HL6360MG HL6361MG HL6360MG HL6361MG PDF

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original
    OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G PDF

    laser diode 940 nM 200mW

    Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
    Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and


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    200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package PDF

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


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    2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG PDF