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Ushio Opto Semiconductors Inc HL6362MG02-A Laser Diode AlGaInP 640nm 45mW 3-Pin Through Hole - Rail/Tube (Alt: HL6362MG02-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HL6362MG02-A	Tube			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ushio Opto Semiconductors Inc HL6362MG-A 640nm / 45mW AlGaInP Laser Diode - Trays (Alt: HL6362MG-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HL6362MG-A	Tray		12 Weeks, 6 Days	22	1 - 10 - 100 $56.7248 1000 $44.9305 10000 $44.9305	Buy Now
OPNEXT HL6362MG01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	HL6362MG01		1			1 $47.216 10 $47.216 100 $47.216 1000 $47.216 10000 $47.216	Buy Now

HL6362MG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HL6362MG		OpNext	Low Operating Current Visible Laser Diode		Original	PDF

HL6362MG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HL6362MG/63MG ODE2026-00 M Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.	Original	HL6362MG/63MG HL6362MG/63MG ODE2026-00 HL6362MG/63MG: HL6362MG HL6363MG	PDF
HL6362MG Abstract: HL6363MG Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.	Original	HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG	PDF
OCLARO Abstract: HL6362MG Text: Data Sheet HL6362MG/63MG AIGaInP Laser Diode Outline 640nm/45mW Features: • Visible light output: 640nm Typ.  Optical output power: 40 mW CW  Single transverse mode  Low operating current: 90mA Typ.  Low operating voltage: 2.6V Max.  Operating temperature: +50°C	Original	HL6362MG/63MG 640nm 640nm/45mW HL6362MG/63MG OCLARO HL6362MG	PDF
Untitled Abstract: No abstract text available Text: HL6362MG/63MG ODE-208-011F Z Rev.6 Feb. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.	Original	HL6362MG/63MG ODE-208-011F HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG	PDF
Untitled Abstract: No abstract text available Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.	Original	HL6362MG/63MG HL6362MG/63MG ODE-208-011E HL6362MG/63MG: HL6362MG HL6363MG	PDF
HL6362MG Abstract: HL6363MG 63MG Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.	Original	HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG 63MG	PDF
Untitled Abstract: No abstract text available Text: Data Sheet HL6362MG/63MG AIGaInP Laser Diode 640nm/45mW Features: Outline • Visible light output: 640nm Typ.  Optical output power: 45 mW CW  Single transverse mode  Low operating current: 90mA Typ.  Low operating voltage: 2.6V Max.  Operating temperature: +50°C	Original	HL6362MG/63MG 640nm/45mW 640nm HL6362MG/63MG	PDF
LD5033 Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet	Original	OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G	PDF
laser diode 940 nM 200mW Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and	Original	200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package	PDF
HL6362MG Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated	Original	2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG	PDF