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    HN2D01F Search Results

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    HN2D01F Price and Stock

    Toshiba America Electronic Components HN2D01FTE85LF

    DIODE ARRAY GP 80V 80MA SC74
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    DigiKey HN2D01FTE85LF Cut Tape 7,211 1
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    HN2D01FTE85LF Digi-Reel 7,211 1
    • 1 $0.46
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    HN2D01FTE85LF Reel 6,000 3,000
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    Mouser Electronics HN2D01FTE85LF 9,334
    • 1 $0.33
    • 10 $0.224
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    • 1000 $0.105
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    Toshiba America Electronic Components HN2D01FU(TE85L,F)

    DIODE ARRAY GP 80V 80MA US6
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    DigiKey HN2D01FU(TE85L,F) Cut Tape 1
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    Quest Components HN2D01FU(TE85L,F) 2,276
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    EBV Elektronik HN2D01FU(TE85L,F) 13 Weeks 3,000
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    Toshiba America Electronic Components HN2D01FU,LF

    Diodes - General Purpose, Power, Switching
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    Mouser Electronics HN2D01FU,LF 2,068
    • 1 $0.37
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    • 100 $0.17
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    Toshiba America Electronic Components HN2D01F(TE85L,F)

    Diode Switching 85V 0.08A 6-Pin SM T/R
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    Verical HN2D01F(TE85L,F) 3,061 93
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    • 100 $0.3363
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    Chip1Stop HN2D01F(TE85L,F) Cut Tape 3,061
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    • 100 $0.17
    • 1000 $0.114
    • 10000 $0.0964
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    Toshiba America Electronic Components HN2D01FU,LF(B

    HN2D01FU,LF(B
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    Verical HN2D01FU,LF(B 2,900 556
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    Quest Components HN2D01FU,LF(B 2,320
    • 1 $0.76
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    • 100 $0.76
    • 1000 $0.228
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    Find more HN2D01F price and stock on Findchips.com

    HN2D01F Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2D01F Toshiba Diode, Ultra High Speed Switching Application Original PDF
    HN2D01F Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    HN2D01F Toshiba DIODE Scan PDF
    HN2D01FTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA SM6 Original PDF
    HN2D01FU Toshiba HN2D01 - DIODE 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE, 1-2T1C, 6 PIN, Signal Diode Original PDF
    HN2D01FU Toshiba Diode, Ultra High Speed Switching Application Original PDF
    HN2D01FU Toshiba Japanese - Diodes Original PDF
    HN2D01FU Toshiba Diodes Original PDF
    HN2D01FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN2D01FU Toshiba DIODE Scan PDF
    HN2D01FU Toshiba Ultra High Speed Silicon Epitaxial Planar Type Diode Scan PDF
    HN2D01FU(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V US6 Original PDF

    HN2D01F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN2D01F

    Abstract: No abstract text available
    Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		PDF HN2D01F HN2D01F

    HN2D01F

    Abstract: No abstract text available
    Text: HN2D01F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D01F ○ 超高速スイッチング用 z z z z 単位: mm 独立した 3 個のダイオードを内蔵 順方向特性が良い。 : VF 3 = 0.98V (標準)


    Original     		PDF HN2D01F 100mA HN2D01F

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子 パッケージに 3 素子を内臓しています。 順方向特性が良い。


    Original     		PDF HN2D01FU 100mA HN2D01FU

    HN2D01F

    Abstract: No abstract text available
    Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm l HN2D01F is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance


    Original     		PDF HN2D01F HN2D01F

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN2D01FU HN2D01FU 100mA

    HN2D01F

    Abstract: No abstract text available
    Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN2D01F HN2D01F

    Untitled

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		PDF HN2D01FU HN2D01FU

    Untitled

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN2D01FU HN2D01FU 100mA

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		PDF HN2D01FU HN2D01FU

    HN2D01FU

    Abstract: No abstract text available
    Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application z HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN2D01FU HN2D01FU

    HN2D01F

    Abstract: No abstract text available
    Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		PDF HN2D01F HN2D01F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. + 0.2 2.8 - 0.3 • Low Forward Voltage 1 . 6 - 0.1 • Fast Reverse Recovery Time : trr= 1.6ns Typ.


    OCR Scan     		PDF HN2D01F HN2D01F 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance


    OCR Scan     		PDF HN2D01F HN2D01F

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.


    OCR Scan     		PDF HN2D01FU HN2D01FU 100mA if--H05 01/iF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN2D01F HN2D01F 961001EAA2'

    HN2D01F

    Abstract: lu2b
    Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.


    OCR Scan     		PDF HN2D01F HN2D01F 961001EAA2' lu2b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •


    OCR Scan     		PDF HN2D01 HN2D01FU

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


    OCR Scan     		PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . Unit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • F ast Reverse Recovery Time : tr r = 1.6ns Typ.


    OCR Scan     		PDF HN2D01 HN2D01FU

    1213-00N

    Abstract: HN2D01F toshiba diode 3D
    Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN2D01F is composed of 3 independent diodes. Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN2D01F HN2D01F 961001EAA2' 1213-00N toshiba diode 3D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.


    OCR Scan     		PDF HN2D01FU HN2D01FU 01//F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n n 1 F • ■ m 'm mmr w ■ ■ Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • HN2D01F is composed of 3independent diodes. Low Forward Voltage : V f 3 = 0.98V (Typ.)


    OCR Scan     		PDF HN2D01F HN2D01F a--25 961001EAA2'

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737