HN3C10FT Search Results

HN3C10FT Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN3C10FT		Toshiba	Transistor Silicon NPN Epitaxial Planar Type		Scan	PDF
HN3C10FT		Toshiba			Scan	PDF
HN3C10FT(TE85L)		Toshiba	TRANS GP BJT NPN 12V 0.08A 6TU6		Scan	PDF

HN3C10FT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	PDF	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Untitled Abstract: No abstract text available Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1	OCR Scan	PDF	HN3C10FT 2SC5086 203C10FT 1000MHz
Untitled Abstract: No abstract text available Text: TO SHIBA HN3C10FT TENTATIVE TOSHIBA TRANSISTOR H M • ■ m 'm SILICON NPN EPITAXIAL PLANAR TYPE i f HF l n F T■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 ±0.1 • TW O devices are built in to the super-thin and ultra super 1.25 ± 0.1	OCR Scan	PDF	HN3C10FT 500MHz --20mA, 1000MGHz 1000MHz
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 -1	OCR Scan	PDF	HN3C10FT 2SC5086 500MHz 1000M
2SC5086 Abstract: HN3C10FT Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1	OCR Scan	PDF	HN3C10FT 2SC5086 2SC5086 HN3C10FT
2SC5086 Abstract: HN3C10FT ultra low noise NPN transistor C2 marking Text: T O S H IB A HN3C10FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C1OFT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6	OCR Scan	PDF	HN3C10FT 2SC5086 500MHz 1000MHz 2SC5086 HN3C10FT ultra low noise NPN transistor C2 marking
2SC5086 Abstract: HN3C10FT Text: TO SH IBA TENTATIVE HN3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C10FT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1	OCR Scan	PDF	HN3C10FT 2SC5086