hot electron devices
Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li
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plasma cutter
Abstract: tanaka al wire stroboscop grinding mill ultrasonic movement detector cuzn tanaka silver alloy wire ion metal detector for detect gold in ground field UPS error alloy tungsten corrosion plating resistance gold
Text: FAILURE ANALYSIS IV. FAILURE ANALYSIS 1. WHY FAILURE ANALYSIS IS NECESSARY? 2. WHAT IS FAILURE ANALYSIS? 3. PROCEDURE OF FAILURE ANALYSIS 3.1 INVESTIGATION OF FAILURE CIRCUMSTANCES 3.2 PRESERVATION OF FAILED DEVICES 3.3 VISUAL INSPECTION 3.4 ELECTRICAL TESTS
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AN931
Abstract: AN996 AN997 AN998 AN999 M39432 floating-gate
Text: AN998 APPLICATION NOTE FLASH+ Multiple Memory Technology EPROM, Flash and EEPROM devices all use the same basic floating-gate mechanism to store data, but they use different techniques for reading and writing. This application note discusses the similarities and
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floating-gate
Abstract: stmicroelectronics "serial eeprom" tunnelling diode AN931 AN996 AN997 AN998 AN999 M39432 hot electron devices
Text: AN998 APPLICATION NOTE FLASH+ Multiple Memory Technology EPROM, Flash and EEPROM devices all use the same basic floating-gate mechanism to store data, but they use different techniques for reading and writing. This application note discusses the similarities and
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tunnelling diode
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breakdown gate oxide
Abstract: an7081 trapped plasma avalanche C1995 11027 AN-708 national
Text: National Semiconductor Application Note 708 Greg Komoto Marshall Davis Eric Hall June 1990 INTRODUCTION In determining the reliability of a MOS process it’s important to consider two prime factors gate oxide quality and the susceptibility of MOSFETs to hot carrier degradation It’s
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breakdown gate oxide
an7081
trapped plasma avalanche
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schematic diagram of energy saving device
Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
Text: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE
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EPROM Products
Abstract: 17061A
Text: INSIDE AMD’S CMOS EPROM TECHNOLOGY TECH N OLOGY DESCRIPTION AMD’s CMOS EPROM memories use standard CMOS periphery with an n-channel floating-gate memory array. The output buffers of the devices are designed to be compatible with both TTL and CMOS circuits. An n-channel pull-down and a p-channel
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hot electron devices
Abstract: SGS-Thomson ball grid array VLSI Vision
Text: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,
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nec shipping label
Abstract: NEC ELECTRON TUBE radiation tube
Text: User’s Manual Safety Instructions to All Personnel Handling Electron Tubes Document No. ET0048EJ1V1UM00 1st edition Date Published February 2002 N CP(N) Printed in Japan 1997 The information in this document is based on documents issued in December, 2001 at the latest.
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radiation tube
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kc 2462
Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102
Text: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less
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Abstract: failure rate TDDB 7086 pre heating bench AHCI refractory testing
Text: Product Reliability Vishay Siliconix Process Reliability and Wafer-Level Reliability WLR Test Program Due to increasing demand for complicated devices, designed with reduced geometry, Vishay Siliconix has made a commitment to enhance and improve process
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wafer incoming
Abstract: EEPROM retention bake screening
Text: Configuration Elements & Reliability June 1996, ver. 3 Data Sheet Introduction Altera’s broad range of programmable logic devices PLDs incorporates four types of configuration elements: EPROM, EEPROM, FLASH, and SRAM. To ensure the highest level of device performance and reliability,
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702 P TRANSISTOR
Abstract: 702 TRANSISTOR split-gate flash
Text: Technical Comparison of Floating Gate Reprogrammable Nonvolatile Memories Technical Paper November 2001 Technical Comparison of Floating Gate Reprogrammable Nonvolatile Memories INTRODUCTION Floating gate reprogrammable EEPROMs, whether called flash memories, EPROMs, or byte alterable E2PROMs,
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Abstract: No abstract text available
Text: Configuration Elements & Reliability June 1996, ver. 3 Data Sheet Introduction Altera’s broad range of programmable logic devices PLDs incorporates four types of configuration elements: EPROM, EEPROM, FLASH, and SRAM. To ensure the highest level of device performance and reliability,
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ua701
Abstract: 702 TRANSISTOR f050 transistor
Text: Technical Comparison of Floating Gate Reprogrammable Nonvolatile Memories Technical Paper 1.0 INTRODUCTION Floating gate reprogrammable EEPROMs, whether called flash memories, EPROMs, or byte alterable E2PROMs, can be compared on performance, cost, reliability, and technology. Performance, cost, and reliability are directly related to the design and wafer process technology. This paper will compare the three major
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bipolar transistor 1500v
Abstract: B50 data cables AVALANCHE TRANSISTOR AN-1628 Motorola germanium transistor pnp ferrite n27
Text: MOTOROLA AN1628 Order this document by AN1628/D SEMICONDUCTOR APPLICATION NOTE AN1628 Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade Application Engineer Motorola Semiconductors Toulouse, France CONTAINS: 1 BREAKDOWN MECHANISMS
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B50 data cables
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ferrite n27
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Untitled
Abstract: No abstract text available
Text: Configuration Elements & Reliability Introduction A ltera's b road range of p rogram m able logic devices PLDs incorporates four types of configuration elem ents: EPROM, EEPROM, FLASH, and SRAM. To ensure the highest level of device perform ance and reliability,
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back Tunnel diode
Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
Text: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,
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reliability
Abstract: symposium research paper and gate
Text: a ADI Reliability Handbook Analog Devices presents many papers on quality and reliability at technical conferences, and publishes articles in many technical journals. Following is a list of some of the papers presented at these conferences. At the 1995 IEEE
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Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
Text: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important
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transistor 2002b
Abstract: No abstract text available
Text: Configuration Elements & Reliability Introduction Altera's broad range of program m able logic devices incorporates four types of configuration elements: EPRO M , EEPROM , FLASH, and SRAM . To ensure the highest level of device perform ance and reliability, Altera
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kEJ capacitor
Abstract: back Tunnel diode
Text: Inside Vantis' EE CMOS PLD Technology 'V BEYOND PERFORMANCE TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which
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memory eras
Abstract: intel EPROM
Text: iny ENGINEERING REPORT ER-20 September 1989 ETOX ll Flash Memory Technology 6 JASON ZILLER PRODUCT ENGINEERING Order Number: 294005-006 6-371 E T O X T M II FLASH MEMORY TECHNOLOGY CONTENTS page in t r o d u c t io n . 6-373
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CR10
Abstract: No abstract text available
Text: SuperFlash EEPROM Technology Technical Paper 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The
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