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    Text: ADE-208-385 Z 2SK2334 (L), 2SK2334 (S Silicon N Channel MOS FET HITACHI Preliminary 1st. Edition August 1995 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from


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    PDF ADE-208-385 2SK2334 HSK2334 2SK2334