HT 1000 - 4
Abstract: HT 1000 4 HT11 HT18 HT120 HT-120
Text: HT11 THRU HT18 1.0 AMP. High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a a a a a a a Case: Molded plastic TS-1
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Original
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MIL-STD202,
260oC/10
HT 1000 - 4
HT 1000 4
HT11
HT18
HT120
HT-120
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PDF
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HT 1000 - 4
Abstract: HT11G HT18G
Text: HT11G THRU HT18G 1.0 AMP. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a a
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HT11G
HT18G
HT 1000 - 4
HT18G
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PDF
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HT 1000 - 4
Abstract: HT11 HT18 HT-120
Text: HT11 THRU HT18 1.0 AMP. High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic TS-1 Epoxy: UL 94V-O rate flame retardant
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Original
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MIL-STD202,
260oC/10
25ambient
HT 1000 - 4
HT11
HT18
HT-120
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PDF
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HT 1000 - 4
Abstract: 11g 140 HT11G HT18G
Text: HT11G THRU HT18G 1.0 AMP. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a a
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Original
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HT11G
HT18G
MIL-STD202,
260oC/10
HT 1000 - 4
11g 140
HT18G
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PDF
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HT 1000 - 4
Abstract: No abstract text available
Text: HT11G THRU HT18G 1.0 AMP. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic TS-1
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Original
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HT11G
HT18G
MIL-STD202,
260oC/10
HT16G
HT 1000 - 4
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PDF
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HT 1000 - 4
Abstract: HT11G HT16G HT18G a14g
Text: HT11G THRU HT18G 1.0 AMP. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic TS-1
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Original
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HT11G
HT18G
MIL-STD202,
260oC/10
25ambient
HT16G
HT 1000 - 4
HT16G
HT18G
a14g
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PDF
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HT11
Abstract: HT14 HT16 HT18 HT1112 HT-120
Text: HT11 - HT18 1.0 AMP. High Efficient Rectifiers TS-1 Features High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
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Original
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MIL-STD-202,
oC/10
50Vdc
HT11
HT14
HT16
HT18
HT1112
HT-120
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PDF
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HT11
Abstract: HT14 HT15 HT16 HT18 HT-120
Text: HT11 THRU HT18 1.0 AMP. High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic TS-1 Epoxy: UL 94V-O rate flame retardant
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Original
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MIL-STD202,
260oC/10
25ambient
HT11
HT14
HT15
HT16
HT18
HT-120
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PDF
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HT11
Abstract: HT18
Text: IM TAIWAN SEMICONDUCTOR HT11 -H T18 1.0 AMP. High Efficient Rectifiers TS-1 RoHS COMPLIANCE -m - Features High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection
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OCR Scan
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-HT18
MIL-STD-202,
50Vdc
10ns/cm
HT11
HT18
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PDF
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HT11G
Abstract: HT16G HT18G HT16G-HT18G
Text: HT11G - HT18G 1.0 AMP. Glass Passivated High Efficient Rectifiers TS-1 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor,
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Original
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HT11G
HT18G
MIL-STD-202,
HT16G
HT11G-HT14G
HT16G-HT18G
50Vdc
HT16G
HT18G
HT16G-HT18G
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PDF
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Untitled
Abstract: No abstract text available
Text: HT11 THRU HT18 1.0 AMP. High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a a a a a a a Case: Molded plastic TS-1
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Original
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PDF
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HT13
Abstract: HT14 HT15 HT16 HT17 HT18 HT11 HT12 HT 1000 4 HT16 8
Text: HT11 THRU HT18 1.0 AMP. High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere TS-1 Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a a a a a a a Case: Molded plastic TS-1
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Original
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PDF
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HT11G
Abstract: HT18G
Text: TAIWAN HT11G - HT18G m . SEMICONDUCTOR 1.0 AMP. Glass Passivated High Efficient Rectifiers TS-1 RoHS COMPLIANCE Features_ <• 4-$■ > -$■ Glass passivated chip junction. High efficiency, Low VF High current capability High reliability
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OCR Scan
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HT11G
HT18G
MIL-STD-202,
HT18G)
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1892
2SB1252
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage
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Original
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2SD1891
2SB1251
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 3.5±0.2 7.2±0.3 0.8±0.2 3.0±0.2 • Features 0.85±0.1 10.0 –0. ● +0.3 M Di ain sc te on na tin nc ue e/ d 1.0±0.2
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2SD2209
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V
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2SB1253
2SD1893
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 φ3.2±0.1 3.5 ● Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000
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2SB1493
2SD2255
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
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2SD1890
2SB1250
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000
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2SD2255
2SB1493
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1500 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2273 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 4.0 6.0 3.0 20.0±0.5 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage
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2SB1500
2SD2273
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD2275
2SB1502
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2221 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1469 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000
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2SD2221
2SB1469
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage
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2SD2274
2SB1501
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PDF
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