Untitled
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682 █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126F Tstg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃
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HBD682
O-126F
-100V
-100mA
-100V,
-30mA
-50mA,
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npn transistor 100v min
Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃
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HBDW93C
O-220
100mA,
100mA
npn transistor 100v min
NPN Transistor 10A 100V
HBDW93C
IB 100MA NPN
npn DARLINGTON 15A
transistor npn ic10A
DARLINGTON 3A 100V npn
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HSBD438
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. PN P S I L I C O N T R A N S I S T O R HSBD438 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃
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HSBD438
-10mA
-500mA
-100mA
-250mA,
HSBD438
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H8050
Abstract: H8050 equivalent
Text: H8050 Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃
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H8050
E00mA
800mA
800mA,
800mA
100AIE
100AIC
H8050
H8050 equivalent
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H3904
Abstract: H3906
Text: N PN S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3904 █ APPLICATIONS Small Signal Amplifier ；High Frequency oscillator；Switching Applications. complement To H3906 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃
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H3904
H3906)
625mW
100AIE
10mAIB
10AIC
100MHz
H3904
H3906
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POWER MOSFET Rise Time 1 ns
Abstract: mosfet gate source voltage 20v
Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF640 █ APPLICATIONSL TO-220F High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） 1 T stg ——Storage Temperature……………………………－55~150℃
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HFF640
O-220F
Width300sDuty
200VVGS
POWER MOSFET Rise Time 1 ns
mosfet gate source voltage 20v
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H78L12
Abstract: ViN-19V 16VVIN27V low current fixed regulator three terminal
Text: 23213 Shantou Huashan Electronic Devices Co.,Ltd. 3-TERMINAL FIXED VOLTAGE REGULATOR H78L12 █ Description H78L12 is the three terminal positive Regulators with single chip, and in a wide range of applications 。It supplies fixed output TO-92 voltages of 12V, deliver over 100mA output current ,and employs
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H78L12
H78L12
100mA
100mA
1mAIO40mA
16VVIN27V,
16VVIN27V
1mAIO100mA
5VVIN27V
14VVIN27V
ViN-19V
16VVIN27V
low current fixed regulator three terminal
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H11-44
Abstract: No abstract text available
Text: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃
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H1144
O-126ML
-120V
-100V
-100V,
-100mA
-500mA,
-50mA
H11-44
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hb123d
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HB123D
O-126ML
300mA
500mA
100mA,
hb123d
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7905
Abstract: ci 7905 transistor 7905 7905 datasheet MA 7905 of transistor 7905 7905 voltage regulator 7905 a 7905 TO-220 H7905
Text: Shantou Huashan Electronic Devices Co.,Ltd. H 7905 █ 3-TERMINAL 1A NEGATIVE VOLTAGE REGULATORS The H7905 series of three terminal negative regulators are available in the TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs
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H7905
O-220
O-220
-20VIO
-12VIO
PO15W,
100kHz
120Hz
7905
ci 7905
transistor 7905
7905 datasheet
MA 7905
of transistor 7905
7905 voltage regulator
7905 a
7905 TO-220
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Untitled
Abstract: No abstract text available
Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML
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HM13002
O-126ML
500mA
100mA
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POWER MOSFET Rise Time 1 ns
Abstract: c25 mosfet "N-Channel MOSFET" HFP45N06 MOSFET 20V 45A MOSFET Rise Time 1 ns MOSFET C25 mosfet gate source voltage 20v mosfet low vgs 1502d
Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~175℃ 1―G
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HFP45N06
O-220
Width300sDuty
60VVGS
POWER MOSFET Rise Time 1 ns
c25 mosfet
"N-Channel MOSFET"
HFP45N06
MOSFET 20V 45A
MOSFET Rise Time 1 ns
MOSFET C25
mosfet gate source voltage 20v
mosfet low vgs
1502d
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H1008
Abstract: No abstract text available
Text: NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H1008 █ █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃
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H1008
800mW
700mA
500mA,
10AIC
H1008
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Untitled
Abstract: No abstract text available
Text: PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX789A █ APPLICATIONS Motor drivers. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃
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HX789A
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Untitled
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HSBD138 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃
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HSBD138
-150mA
-500mA,
-50mA
-30mA
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H557
Abstract: No abstract text available
Text: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H557 █ APPLICATIONS SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃
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500mW
-100mA
-100AIC
-10mA,
-100mA,
-10mA
-10mA
H557
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Untitled
Abstract: No abstract text available
Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2717 █ APPLICATIONS TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃
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H2717
300mW
100AIC
30MHz
45MHz
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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H2682
O-126ML
10AIC
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electronic devices
Abstract: No abstract text available
Text: N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13007 █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＡＴＩＯＮ █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB
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HE13007
O-220AB
electronic devices
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H2907A
Abstract: h2907
Text: PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2907A █ APPLICATIONS GENERAL PURPOSE APPLICATION. SWITCHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃
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H2907A
625mW
-610V,
-500mA
-150mA,
-15mA
-500mA,
-50mA
H2907A
h2907
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HBS170
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They
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HBS170
500mA
100uA
200mA
HBS170
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD377 █ ＡＰＰＬＩＣＡＴＩＯＮＳ Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… －55~150℃
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HSBD377
150mA
100mA,
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H3906
Abstract: H3904
Text: PN P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3906 █ APPLICATIONS Small Signal Amplifier ；High Frequency oscillator；Switching Applications. complement To H3904 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃
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H3906
H3904)
625mW
-100AIE
-10mAIB
-10AIC
-10mA
-10mA,
-10mA
H3906
H3904
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HFP840
Abstract: diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220
Text: HFP840 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,
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HFP840
O-220
IRF840
width300S
HFP840
diode 400V 4A
IRF840
irf840 equivalent
8A500V
transistor 400v 8a to220
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