Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HUF75321P3 Search Results

    SF Impression Pixel

    HUF75321P3 Price and Stock

    onsemi HUF75321P3

    MOSFET N-CH 55V 35A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75321P3 Tube 470 1
    • 1 $2.02
    • 10 $2.02
    • 100 $2.02
    • 1000 $0.63756
    • 10000 $0.55488
    		Buy Now
    Avnet Americas HUF75321P3 Tube 17 Weeks 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.52595
    		Buy Now
    Mouser Electronics HUF75321P3 1,566
    • 1 $1.18
    • 10 $0.766
    • 100 $0.673
    • 1000 $0.554
    • 10000 $0.554
    		Buy Now
    Verical HUF75321P3 600 50
    • 1 -
    • 10 -
    • 100 $0.6312
    • 1000 $0.5528
    • 10000 $0.5407
    		Buy Now
    Arrow Electronics HUF75321P3 600 17 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.6312
    • 1000 $0.5528
    • 10000 $0.5407
    		Buy Now
    Newark HUF75321P3 Bulk 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.88
    • 10000 $0.685
    		Buy Now
    Future Electronics HUF75321P3 Tube 17 Weeks 1,200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.565
    • 10000 $0.515
    		Buy Now
    Onlinecomponents.com HUF75321P3 8
    • 1 $0.705
    • 10 $0.705
    • 100 $0.641
    • 1000 $0.574
    • 10000 $0.534
    		Buy Now
    Bristol Electronics HUF75321P3 30 3
    • 1 -
    • 10 $1.875
    • 100 $1.2188
    • 1000 $1.2188
    • 10000 $1.2188
    		Buy Now
    Quest Components HUF75321P3 24
    • 1 $2.5
    • 10 $2
    • 100 $1.25
    • 1000 $1.25
    • 10000 $1.25
    		Buy Now
    Rochester Electronics HUF75321P3 551 1
    • 1 $0.6165
    • 10 $0.6165
    • 100 $0.5795
    • 1000 $0.524
    • 10000 $0.524
    		Buy Now
    TME HUF75321P3 1
    • 1 $1.31
    • 10 $1.25
    • 100 $0.92
    • 1000 $0.7
    • 10000 $0.7
    		Get Quote
    Avnet Silica HUF75321P3 18 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    EBV Elektronik HUF75321P3 100 19 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Master Electronics HUF75321P3 8
    • 1 $0.705
    • 10 $0.705
    • 100 $0.641
    • 1000 $0.574
    • 10000 $0.534
    		Buy Now

    Rochester Electronics LLC HUF75321P3

    POWER FIELD-EFFECT TRANSISTOR, 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75321P3 Bulk 468
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.64
    • 10000 $0.64
    		Buy Now

    Fairchild Semiconductor Corporation HUF75321P3

    Power Field-Effect Transistor, 35A, 55V, 0.034ohm, N-Channel, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75321P3 7,467 1
    • 1 $0.6165
    • 10 $0.6165
    • 100 $0.5795
    • 1000 $0.524
    • 10000 $0.524
    		Buy Now
    ComSIT USA HUF75321P3 650
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HUF75321P3 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75321P3 Fairchild Semiconductor 35 A, 55 V, 0.034 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75321P3 Fairchild Semiconductor 35A, 55V, 0.034 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321P3 Harris Semiconductor 31A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75321P3 Intersil 35A, 55V, 0.034 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321P3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75321P3_NL Fairchild Semiconductor 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75321P3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 relay 6v 200 ohm

    75321p

    Abstract: DIODE 709 1334 AN9321 HUF75321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321
    Text: HUF75321P3, HUF75321S3, HUF75321S3S S E M I C O N D U C T O R 31A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 31A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 1-800-4-HARRIS 75321p DIODE 709 1334 AN9321 HUF75321P3 HUF75321S3 HUF75321S3S HUF75321S3ST TA75321

    75321p

    Abstract: HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321P3, HUF75321S3S 75321p HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    75321p

    Abstract: No abstract text available
    Text: HUF75321P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 35 A, 34 mΩ Features • 35A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75321P3 HUF75321P3 75321p

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321P3, HUF75321S3S

    75321p

    Abstract: AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay
    Text: HUF75321P3, HUF75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321P3, HUF75321S3S 75321p AN9321 AN9322 HUF75321P3 HUF75321S3S HUF75321S3ST TA75321 TB334 Saber Relay

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    AN9525

    Abstract: IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525
    Text: Application Note AN-002 Power MOSfet selection guidelines for class-D power amplifiers with ultra-low distortion. Selection of MOSfets using these guidelines can help the design of highly efficient full bridge class-D power amplifiers. This is achieved by carefully considering certain


    Original     		PDF AN-002 AN-003) 4261GA AN-9525 AN-1070 AN-1071 AN9525 IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB O-263AB

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S interrii D a ta S h e e t 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S AN7260.

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S HUF75321P 10e-3 72e-2 67e-2 30e-1 49e-1

    75321P

    Abstract: 75321S
    Text: HUF75321P3, HUF75321S3S interrii Data S heet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs um fy' These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S HUF7S321P3, HUF75321S3S AN7254 AN7260. 75321P 75321S

    75321p

    Abstract: 75321S HUF75321 410E1
    Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB 330mm 100mm 75321p 75321S 410E1

    75321p

    Abstract: JCN7
    Text: HUF75321P3, HUF75321S3S S em iconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S 72e-2 67e-2 30e-1 49e-1 HUF75321P 10e-3 75321p JCN7