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    HUF75337S3ST Price and Stock

    Harris Semiconductor HUF75337S3ST

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HUF75337S3ST 800 2
    • 1 -
    • 10 $2.1294
    • 100 $1.5289
    • 1000 $1.3432
    • 10000 $1.3432
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    Quest Components HUF75337S3ST 640
    • 1 $4.3875
    • 10 $4.3875
    • 100 $2.0475
    • 1000 $1.9013
    • 10000 $1.9013
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    HUF75337S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75337S3ST Fairchild Semiconductor 75 A, 55 V, 0.014 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75337S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75337S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75337S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75337P

    Abstract: 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 75337P 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9

    75337P

    Abstract: 77e-1 75337 HUF75337 75337S HUF75337P3 HUF75337S3S HUF75337S3ST TB334 HUF75337G3
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 75337P 77e-1 75337 HUF75337 75337S HUF75337P3 HUF75337S3S HUF75337S3ST TB334 HUF75337G3

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75337S

    Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS 75337S HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334

    75337

    Abstract: 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 43ucts 75337 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2

    rr180

    Abstract: 75337 75337S 75337P
    Text: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337S3S AN7260. rr180 75337 75337S 75337P

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S Semiconductor Data Sheet 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S O-263AB O-263AB

    huf75337g3

    Abstract: 75337S
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS huf75337g3 75337S

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337

    75337P

    Abstract: ta75337
    Text: interrii HUF75337G3, HUF75337P3, HUF75337S3S Data S heet Ju n e 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S AN7254 AN7260. 75337P ta75337