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    HUFA75309D3ST Search Results

    HUFA75309D3ST Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUFA75309D3ST Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF

    HUFA75309D3ST Datasheets Context Search

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    75309P

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 TO-252 N-channel power MOSFET
    Text: HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309P HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 TO-252 N-channel power MOSFET

    75309

    Abstract: No abstract text available
    Text: HUFA75309P3, HUFA75309D3, HUFA75309D3S TM Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309

    75309p

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334
    Text: HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 309P These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309p HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334