HVL147
Abstract: No abstract text available
Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0300 Rev.3.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147
REJ03G0393-0300
PXSF0002ZA-A
HVL147
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147M
REJ03G0394-0100
Unit2607
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0300 Rev.3.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147
REJ03G0393-0300
HVL147
PXSF0002ZA-A
|
PDF
|
HVL147M
Abstract: PUSF0002ZA-A
Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147M
REJ03G0394-0300
PUSF0002ZA-A
HVL147M
PUSF0002ZA-A
|
PDF
|
HVL147
Abstract: No abstract text available
Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0200 Rev.2.00 Oct 20, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147
REJ03G0393-0200
temperature-900
Unit2607
HVL147
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147
REJ03G0393-0100
Junction-900
Unit2607
|
PDF
|
HVL147M
Abstract: No abstract text available
Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0200 Rev.2.00 Oct 20, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
|
Original
|
HVL147M
REJ03G0394-0200
te-900
Unit2607
HVL147M
|
PDF
|
DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
|
Original
|
REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP409KS
REJ03G1501-0200
MFP12)
MFP12
PUSF0012ZA-A
HVL147M
RKP201KN
REJ03G1501-0200
|
PDF
|
RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
|
Original
|
R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP401KS
REJ03G1345-0200
MFP12)
MFP12
PUSF0012ZA-A
RKP200KP
HVL147M
|
PDF
|
HVL147M
Abstract: PUSF0002ZA-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
|
PDF
|
HVL147M
Abstract: PUSF0012ZA-A RKP408KS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: RKP401KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1345-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP401KS
REJ03G1345-0100
MFP12)
RKP401KS
MFP12
PUSF0012ZA-A
RKP200
HVL147
|
PDF
|
BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
|
PDF
|
r61505
Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials
|
Original
|
REJ13G0001-1900
r61505
R63400
R61506
R61504
R61501
NS953 Niigata Seimitsu
ns953 ic data
r61503
Niigata Seimitsu
04BZ
|
PDF
|
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
|
Original
|
REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
|
PDF
|
HVL147M
Abstract: PUSF0012ZA-A RKP201KN RKP409KS
Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP409KS
REJ03G1501-0200
MFP12)
MFP12
PUSF0012ZA-A
HVL147M
RKP201KN
REJ03G1501-0200
PUSF0012ZA-A
RKP409KS
|
PDF
|
RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
|
Original
|
R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
|
PDF
|
Ample Communications
Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
REJ27G0027-0100/Rev
Ample Communications
HVU365
GSM repeater circuit at 400
310 variable capacitance diode
HVL400C
RKV600KP
RKV601KP
RKV602KP
RKV603KP
RKV605KP
|
PDF
|
rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP401KS
REJ03G1345-0200
MFP12)
RKP401KS
MFP12
PUSF0012ZA-A
RKP200KP
HVL147M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
|
Original
|
RKP409KS
REJ03G1501-0200
MFP12)
RKP409KS
MFP12
PUSF0012ZA-A
HVL147M
RKP201KN
|
PDF
|
