HWS383 Search Results

HWS383 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HWS383		Hexawave	GAAS Mmic Switch		Original	PDF

HWS383 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HWS383 Abstract: QFN12L Text: HWS383 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description	Original	PDF	HWS383 QFN12L HWS383 11a/b/g QFN12L
HWS383 Abstract: 50GHZ QFN12L Text: HWS383 June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process Description The HWS383 is a GaAs PHEMT MMIC DPDT	Original	PDF	HWS383 QFN12L 50GHz 85GHz HWS383 50GHZ QFN12L
HWS383 Abstract: pHEMT 6GHz 50GHZ QFN12L Text: HWS383 GaAs DC-6GHz DPDT Switch June 2003 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process	Original	PDF	HWS383 QFN12L 50GHz 85GHz HWS383 pHEMT 6GHz 50GHZ QFN12L
HWS410 Abstract: 50GHZ HWS383 QFN12L Text: HWS410 February 2004 V1 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8dB @2.50GHz • • • • • 1.0dB @5.85GHz Isolation: 29.5dB @2.50GHz 20.5dB @5.85GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package PHEMT process	Original	PDF	HWS410 QFN12L 50GHz 85GHz HWS383 HWS410 50GHZ HWS383 QFN12L
Untitled Abstract: No abstract text available Text: HWS420 July 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package PHEMT process	Original	PDF	HWS420 QFN12L HWS383 HWS420 11a/b/g
Untitled Abstract: No abstract text available Text: HWS410 March 2004 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb) Free Package	Original	PDF	HWS410 QFN12L HWS383 HWS410 11a/b/g
HWS383 Abstract: HWS420 QFN12L Text: HWS420 GaAs DC-6 GHz DPDT Switch Sptember 2006 QFN12L 3 x 3 mm Features • Low Insertion Loss: 0.7 dB @ 2.5 GHz • • • • • 1.0 dB @ 4.9 to 6.0 GHz Isolation: 27 dB @ 2.5 GHz 20 dB @ 4.9 to 6.0 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Package,	Original	PDF	HWS420 QFN12L HWS383 HWS420 11a/b/g HWS383 QFN12L
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
HWS410 Abstract: qfn12 HWS383 QFN12L Text: HWS410 GaAs DC-6 GHz DPDT Switch September 2006 V3 QFN12L 3 x 3 mm Features • Low Insertion Loss : 0.8 dB @ 2.50 GHz • • • • • 1.0 dB @ 5.85 GHz Isolation: 29.5 dB @ 2.50 GHz 20.5 dB @ 5.85 GHz Low DC Power Consumption Miniature QFN12L (3x3 mm) Plastic Lead (Pb)	Original	PDF	HWS410 QFN12L HWS383 HWS410 11a/b/g qfn12 HWS383 QFN12L