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    HX6656 Search Results

    HX6656 Datasheets (206)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HX6656 Honeywell 32Kx8 ROM-SOI Original PDF
    HX6656BFC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BFC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BFC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656BFT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BFT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BHC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BNC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656BNT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BNT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656BRC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BRC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-BRT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-EFC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-EFT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-EHC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-EHT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-ENC Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-ENT Honeywell 32K x 8 ROM-SOI Original PDF
    HX6656-ERC Honeywell 32K x 8 ROM-SOI Original PDF
    ...

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    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 ROM—SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF 1x106 1x109 1x1011 1x1014 HX6656 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead

    Diode smd f6

    Abstract: dielectric tester dc FP-28 rom radiation TO-612 ma f4 smd transistor smd a7 transistor smd transistor a4 HX6656
    Text: Military & Space Products 32K x 8 ROM—SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6656 1x106 1x109 1x1011 1x1014 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead Diode smd f6 dielectric tester dc FP-28 rom radiation TO-612 ma f4 smd transistor smd a7 transistor smd transistor a4 HX6656

    rom radiation

    Abstract: HX6656 900-154
    Text: Military & Space Products 32K x 8 ROM—SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6656 1x106 1x109 1x1011 1x1014 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead rom radiation HX6656 900-154

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)


    OCR Scan     		PDF 1x106ra 1x109 1x101 28-Lead 36-Lead HX6656 MIL-STD-1835, CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF HX6656 1x106rad 1x109 1x101 1x10U 28-Lead MIL-STD-18