HXVN0100 Search Results

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Text: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109