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    HY TRANSISTOR Search Results

    HY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY1Z-24V

    Abstract: HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information
    Text: HY High Sensitivity 1 Form C Relay in Ultra Small Size 12 .472 HY-RELAYS 7.4 .291 UL File No.: E43149 CSA File No.: LR26550 10.1 .398 • High sensitivity: 150 mW/200 mW • A wide range of ambient temperature: –40°C to +70°C –40°F to +158°F • Sealed construction


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    E43149 LR26550 mW/200 HY1Z-24V HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information PDF

    HV133WX1-100

    Abstract: 20347-040E-02 20345-040T-02 20347-040E HV133WX1 20397-008E lcd 13.3 monitor led 2600 t series pressure transmitter 20347 I-PEX lvds 40 pin
    Text: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF B OE HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF B OE HY DIS AND MUS T B E R E T UR NE D T O B OE HY DIS UP ON IT S R E QUE S T


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    B2005-C001-A S864-1360 HV133WX1-100 HV133W 20347-040E-02 20345-040T-02 20347-040E HV133WX1 20397-008E lcd 13.3 monitor led 2600 t series pressure transmitter 20347 I-PEX lvds 40 pin PDF

    HV121P01-101

    Abstract: inverter sic 141 rev 00 repair lcd monitor samsung T-CON SAMSUNG LCD samsung t-con THC63LVDM63A samsung ccfl backlight inverter DF19L-20P-1H X199 DF19G-20S-1C
    Text: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF HY DIS AND MUS T B E R E T UR NE D T O HY DIS UP O N IT S R E QUE S T T I T LE : H V 1 2 1 P 0 1 - 1 0 1


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    2005-C 001-D S864-1351 B2005-C001-D HV121P01 HV121P01-101 inverter sic 141 rev 00 repair lcd monitor samsung T-CON SAMSUNG LCD samsung t-con THC63LVDM63A samsung ccfl backlight inverter DF19L-20P-1H X199 DF19G-20S-1C PDF

    12NP135C

    Abstract: 10 ohm resistor transistor 9009
    Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135C 6.3 ±0.2 6.0 ±0.2 5.5 ±0.3 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 6.5 ±0.3 Ø12.0 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12NP135C 10kHz 12NP135C 10 ohm resistor transistor 9009 PDF

    transistor 9009

    Abstract: circuit drawing of digital multimeter 1 ohm resistor 12NP135A magnetic BUZZER CIRCUIT
    Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135A 6.3±0.2 6.0±0.2 5.5±0.3 Ø0.6 x 2 + _ 13.7±0.3 0.5±0.2 6.5±0.3 Ø12.0±0.3 7.5±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12NP135A 10kHz transistor 9009 circuit drawing of digital multimeter 1 ohm resistor 12NP135A magnetic BUZZER CIRCUIT PDF

    circuit drawing of digital multimeter

    Abstract: transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731
    Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135B 6.3 ±0.2 6.0 ±0.2 5.5 ±0.2 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 Ø12.0 ±0.3 6.5 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.


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    12NP135B 10kHz circuit drawing of digital multimeter transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731 PDF

    2N5250

    Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
    Text: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.


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    HIL-s-19500/380B MIL-s-19500/180A( SSN203N3WXUR TYPESN4865, N5250, N5251, NIL-S-19500. F3-114) Force-17 koject5961-1222] 2N5250 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006 PDF

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF PDF

    10K preset

    Abstract: barber ZRA500 4066 u3a the Wheatstone Bridge magnetic stripe immobiliser Ni81Fe19 ZMY20M permalloy zmy20
    Text: Application Note 20 Issue 1 April 1996 Magnetoresistive Sensors Principles of Operation and Applications Stefan Hübschmann Matthias Schneider This a pplication note provides an overview of the Zetex range of Magnetoresistive sensors. The layout of a typical magnetoresistive


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    ZMY20 Ni81Fe19) 10K preset barber ZRA500 4066 u3a the Wheatstone Bridge magnetic stripe immobiliser Ni81Fe19 ZMY20M permalloy zmy20 PDF

    4814 transistor

    Abstract: 4814 charge TDA-4814 dip 4814 ic 4814 Q67000-A8163 active harmonic filter P-DIP-14-1 4814A 4814
    Text: Power Factor Controller TDA 4814 IC for High Power Factor and Active Harmonic Filter Bipolar IC Features IC for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Direct drive of SIPMOS transistor


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    P-DIP-14-1 Q67000-A8163 4814 transistor 4814 charge TDA-4814 dip 4814 ic 4814 Q67000-A8163 active harmonic filter P-DIP-14-1 4814A 4814 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1663 TRANSISTOR PNP 1 FEATURES Power dissipation 0.5 W (Tamb=25℃) PCM: Collector current -1.5 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range


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    OT-89 KTA1663 OT-89 -10mA -500mA -30mA 500mA PDF

    BF494

    Abstract: BF495 Transistors BF 494 bf 494 BF 494 C to92e case to-92e 115 92E
    Text: BF494 ï; BF 495 NPN SILICON HP SMALL SIGNAL TRANSISTORS Va €•im u stM s h i "Hy i I Ì *p:g«J ,1 CASE TO-92E THE BF4 9 4 , BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RP SMALL SIGNAL APPLICATIONS U P TO 100MH z . CBE ABSOLUTE MAXIMUM RATINGS


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    BF494, BF495 100MHz. O-92E BF494 300mW 10jiA Transistors BF 494 bf 494 BF 494 C to92e case to-92e 115 92E PDF

    Untitled

    Abstract: No abstract text available
    Text: Hy Custom Hybrid ICs Hybrid IC component specifications-BX series Item BX- 1 Process general process BX-II Double side through-holes Chip size Density (high-density process) Thickness 0.8mm, 4 layers BX- III (high-density process) Thickness 0.8mm, 4 to 6 layers


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    LL--41 -65mm PDF

    Untitled

    Abstract: No abstract text available
    Text: Hy Hybrid ICs ROHM’s Hybrid ICs ROHM produces the following four hybrid 1C series to meet various customer needs. 3 BK series Choose the series that best suits your requirements in terms of operating conditions, These are hybrid ICs formed by directly mounting chip components


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    PDF

    2SD1809

    Abstract: fe1000 100 amp npn darlington power transistors T103 SC511
    Text: 2SD1809 h ~7> y X $ / T ransistors 2 S D 1 8 9 !x N P N > y =3 - y > h> hy > v * * 4,W ^ Jlillliffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • £Wf2rJ*i&lSl/Dimen$ions Unit: mm • « * 1) £ — u x' h fSjhFE^’’ <&) "?>o


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    2SD1809 2SD1809 500mA) O-92L SC-51 V/500mA 500mA/500MA fe1000 100 amp npn darlington power transistors T103 SC511 PDF

    ASY77

    Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74
    Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15


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    ACY33 ACY34 ACY35 ACY36 ACY38 ACY39 ACY40 ACY41 ACY44 ASY26 ASY77 OC75 GERMANIUM SMALL SIGNAL TRANSISTORS oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74 PDF

    OC74

    Abstract: OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72
    Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max M in Max Cal, mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15 10


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    ACY33 ACY34 ACY35 ACY36 ACY38 ACY39 ACY40 ACY41 ACY44 ASY26 OC74 OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72 PDF

    Untitled

    Abstract: No abstract text available
    Text: Linear Regulator Protection Circuitry hy K ii'ran 'M .ille \ M ost m onolithic lin ear regulators contain basic protection featu res to safegu ard again st poten tially catastrophic events. These featu res include short circu it and overvoltage p rotection , therm al shu tdow n , reverse battery a n d reverse transient protection.


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    27ki2 PDF

    2SC2412KLN

    Abstract: No abstract text available
    Text: 2 3 2SC2412KLN $ /T ra n sisto rs h "7 > v C 2 4 1 2 K L t ‘* * >Planar T ;u y uNPN ~ ^S ilicon NPN Transistor hy>' > 7'* 'Expitaxial fé M fé & ^ tÌ< H ffl/L o w Freq. Noise Amp. N • i'W i v t'ìiS I/D im e n s io n s U nit : mm N F = 1 d B (Typ.) (at V ce = 6 V ,


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    2SC2412KLN 2SC2412KLN PDF

    TRANSISTOR TZ

    Abstract: No abstract text available
    Text: hy V > $ IMT4 /Transistors IMT4 T'T V \s — x "J K ^— ^ — JU Kx/W 7. Isolated Mini-Mold Device raWJŒii'I’iffl/H ig h Voltage Amp. W fi^& HI/Diinensions Unit : mm 1) SMT(SC-59) ¿ I rI — 2ï i £>- r h 7 > ^ * ''A o T t '- 5 o 2) S M T < O g t(lfé * iS tC < t‘J î l * A i nIfÊ


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    SC-59) TRANSISTOR TZ PDF

    PANASONIC CE EB

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK -CIO 72 M f f lIC AN90C00 Series A N 9 0 C 0 0 Series h * 7 > ï? 7 Is <4 /Transistor I- 7 > i> X ;? 7 1-"f AN90C00 ^ ¡ I - X l i , 4 Arrays hy « 1 i -y ? £ & iit t L t z 0SS ì i / 1 U V«/ 9 IC i t L tz •>' —X o n iiX 't* 9 f > ' 7 ' 7 X f . ? } ' S I L t c . y ' r — ì; X-,


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    AN90C00 AN90C00 -CICJC22 200//A PANASONIC CE EB PDF

    tf81

    Abstract: No abstract text available
    Text: • 7 0 2 0 ^ 0 0 0 Ô 2 Ü 1 357 ■ RHN -fe>'9‘/S e n s o rs RPT-38PT RPT-38PT Silicon Planar Phototransistor • íl-Jfé rfü Eil/D im en sion s Unit : mm RPT-38PT ti., -fe is -y- m t-h hy> > z$?to «an; ”"103.1 ±0.2 K SIR-38ST * h h "7 RPT-38PT represents silicon planer


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    RPT-38PT RPT-38PT SIR-38ST SIR-38ST) 500Lux tf81 PDF

    smd transistor HY 30

    Abstract: smd transistor HY 10
    Text: TCA 505 B Revision History: Original Version 09.91 Previous Releases: TCA 505 Page Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exeeding only one of these values may cause ir­ reversible damage to the integrated circuit.


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    P-DIP-16 P-DSO-16 smd transistor HY 30 smd transistor HY 10 PDF

    ISP824-1

    Abstract: No abstract text available
    Text: AC Input Photo Transistors Low Input Current 4 pin Packages fte t N u M te r : C o f ftttita m ia r m io v««<uv f M M S /a S /lm A W n {% ISP814-1 ISP814-2 ISF814-3 Two Infra-Red LEDs Connected In Inverse Parallel ISP824-1 ISP824-2 Dual Independent AC Input Isolators


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    ISP814-1 ISP814-2 ISF814-3 ISP824-1 ISP824-2 ISP824-3 ISP844-1 ISP844-2 ISP844-3 EN60950 PDF