HY1Z-24V
Abstract: HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information
Text: HY High Sensitivity 1 Form C Relay in Ultra Small Size 12 .472 HY-RELAYS 7.4 .291 UL File No.: E43149 CSA File No.: LR26550 10.1 .398 • High sensitivity: 150 mW/200 mW • A wide range of ambient temperature: –40°C to +70°C –40°F to +158°F • Sealed construction
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E43149
LR26550
mW/200
HY1Z-24V
HY1-12V
HY1-24V
HY1Z-12V
LR26550
AgPd
Matsua Miniature Relay s3 12v
Matsua Relay Technical Information
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HV133WX1-100
Abstract: 20347-040E-02 20345-040T-02 20347-040E HV133WX1 20397-008E lcd 13.3 monitor led 2600 t series pressure transmitter 20347 I-PEX lvds 40 pin
Text: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF B OE HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF B OE HY DIS AND MUS T B E R E T UR NE D T O B OE HY DIS UP ON IT S R E QUE S T
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B2005-C001-A
S864-1360
HV133WX1-100
HV133W
20347-040E-02
20345-040T-02
20347-040E
HV133WX1
20397-008E
lcd 13.3 monitor led
2600 t series pressure transmitter
20347
I-PEX lvds 40 pin
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HV121P01-101
Abstract: inverter sic 141 rev 00 repair lcd monitor samsung T-CON SAMSUNG LCD samsung t-con THC63LVDM63A samsung ccfl backlight inverter DF19L-20P-1H X199 DF19G-20S-1C
Text: P R OP R IE T AR Y NOT E T HIS S P E C IF IC AT ION IS T HE P R OP E R T Y OF HY DIS AND S HALL NOT B E R E P R ODUC E D OR C O P IE D W IT HOUT T HE W R IT T E N P E R MIS S ION OF HY DIS AND MUS T B E R E T UR NE D T O HY DIS UP O N IT S R E QUE S T T I T LE : H V 1 2 1 P 0 1 - 1 0 1
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2005-C
001-D
S864-1351
B2005-C001-D
HV121P01
HV121P01-101
inverter sic 141 rev 00
repair lcd monitor samsung
T-CON SAMSUNG LCD
samsung t-con
THC63LVDM63A
samsung ccfl backlight inverter
DF19L-20P-1H
X199
DF19G-20S-1C
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12NP135C
Abstract: 10 ohm resistor transistor 9009
Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135C 6.3 ±0.2 6.0 ±0.2 5.5 ±0.3 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 6.5 ±0.3 Ø12.0 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.
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12NP135C
10kHz
12NP135C
10 ohm resistor
transistor 9009
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transistor 9009
Abstract: circuit drawing of digital multimeter 1 ohm resistor 12NP135A magnetic BUZZER CIRCUIT
Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135A 6.3±0.2 6.0±0.2 5.5±0.3 Ø0.6 x 2 + _ 13.7±0.3 0.5±0.2 6.5±0.3 Ø12.0±0.3 7.5±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.
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12NP135A
10kHz
transistor 9009
circuit drawing of digital multimeter
1 ohm resistor
12NP135A
magnetic BUZZER CIRCUIT
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circuit drawing of digital multimeter
Abstract: transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731
Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135B 6.3 ±0.2 6.0 ±0.2 5.5 ±0.2 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 Ø12.0 ±0.3 6.5 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.
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12NP135B
10kHz
circuit drawing of digital multimeter
transistor 9009
magnetic BUZZER CIRCUIT
12NP135B
Buzzer
buzzer circuit
transistor 2731
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2N5250
Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
Text: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.
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HIL-s-19500/380B
MIL-s-19500/180A(
SSN203N3WXUR
TYPESN4865,
N5250,
N5251,
NIL-S-19500.
F3-114)
Force-17
koject5961-1222]
2N5250
2N5251
mug 14 431
NIL-S-19500
2N4865
2N5151
FSC5961
2N5250 JAN
Xelerated
SAA 1006
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2N7002 NXP MARKING
Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101) Very high ESD protection levels and
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OD323
SC-76)
OD882D
OD882
OD123F
2N7002 NXP MARKING
TL431 transistor 139 et
cd player amplifier double ic 4440
BCM 4709
sot1194
SSOP14 land pattern
ip4065cx11
PMV27UP
TRANSISTOR SMD CODE PACKAGE SOT89 gy
IP4058CX8/LF
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10K preset
Abstract: barber ZRA500 4066 u3a the Wheatstone Bridge magnetic stripe immobiliser Ni81Fe19 ZMY20M permalloy zmy20
Text: Application Note 20 Issue 1 April 1996 Magnetoresistive Sensors Principles of Operation and Applications Stefan Hübschmann Matthias Schneider This a pplication note provides an overview of the Zetex range of Magnetoresistive sensors. The layout of a typical magnetoresistive
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ZMY20
Ni81Fe19)
10K preset
barber
ZRA500
4066 u3a
the Wheatstone Bridge
magnetic stripe
immobiliser
Ni81Fe19
ZMY20M
permalloy zmy20
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PDF
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4814 transistor
Abstract: 4814 charge TDA-4814 dip 4814 ic 4814 Q67000-A8163 active harmonic filter P-DIP-14-1 4814A 4814
Text: Power Factor Controller TDA 4814 IC for High Power Factor and Active Harmonic Filter Bipolar IC Features IC for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Direct drive of SIPMOS transistor
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P-DIP-14-1
Q67000-A8163
4814 transistor
4814 charge
TDA-4814
dip 4814
ic 4814
Q67000-A8163
active harmonic filter
P-DIP-14-1
4814A
4814
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1663 TRANSISTOR PNP 1 FEATURES Power dissipation 0.5 W (Tamb=25℃) PCM: Collector current -1.5 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range
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OT-89
KTA1663
OT-89
-10mA
-500mA
-30mA
500mA
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BF494
Abstract: BF495 Transistors BF 494 bf 494 BF 494 C to92e case to-92e 115 92E
Text: BF494 ï; BF 495 NPN SILICON HP SMALL SIGNAL TRANSISTORS Va €•im u stM s h i "Hy i I Ì *p:g«J ,1 CASE TO-92E THE BF4 9 4 , BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RP SMALL SIGNAL APPLICATIONS U P TO 100MH z . CBE ABSOLUTE MAXIMUM RATINGS
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BF494,
BF495
100MHz.
O-92E
BF494
300mW
10jiA
Transistors BF 494
bf 494
BF 494 C
to92e
case to-92e
115 92E
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Untitled
Abstract: No abstract text available
Text: Hy Custom Hybrid ICs Hybrid IC component specifications-BX series Item BX- 1 Process general process BX-II Double side through-holes Chip size Density (high-density process) Thickness 0.8mm, 4 layers BX- III (high-density process) Thickness 0.8mm, 4 to 6 layers
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LL--41
-65mm
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Untitled
Abstract: No abstract text available
Text: Hy Hybrid ICs ROHM’s Hybrid ICs ROHM produces the following four hybrid 1C series to meet various customer needs. 3 BK series Choose the series that best suits your requirements in terms of operating conditions, These are hybrid ICs formed by directly mounting chip components
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2SD1809
Abstract: fe1000 100 amp npn darlington power transistors T103 SC511
Text: 2SD1809 h ~7> y X $ / T ransistors 2 S D 1 8 9 !x N P N > y =3 - y > h> hy > v * * 4,W ^ Jlillliffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • £Wf2rJ*i&lSl/Dimen$ions Unit: mm • « * 1) £ — u x' h fSjhFE^’’ <&) "?>o
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2SD1809
2SD1809
500mA)
O-92L
SC-51
V/500mA
500mA/500MA
fe1000
100 amp npn darlington power transistors
T103
SC511
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PDF
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ASY77
Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74
Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15
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ACY33
ACY34
ACY35
ACY36
ACY38
ACY39
ACY40
ACY41
ACY44
ASY26
ASY77
OC75
GERMANIUM SMALL SIGNAL TRANSISTORS
oc75 oc76
oc77
Germanium power
Germanium Power Transistors
OC74
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PDF
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OC74
Abstract: OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72
Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max M in Max Cal, mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15 10
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ACY33
ACY34
ACY35
ACY36
ACY38
ACY39
ACY40
ACY41
ACY44
ASY26
OC74
OC76
GERMANIUM SMALL SIGNAL TRANSISTORS
OC71
OC75
oc75 oc76
ASY76
ASY77
ASY80
OC72
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Untitled
Abstract: No abstract text available
Text: Linear Regulator Protection Circuitry hy K ii'ran 'M .ille \ M ost m onolithic lin ear regulators contain basic protection featu res to safegu ard again st poten tially catastrophic events. These featu res include short circu it and overvoltage p rotection , therm al shu tdow n , reverse battery a n d reverse transient protection.
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27ki2
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2SC2412KLN
Abstract: No abstract text available
Text: 2 3 2SC2412KLN $ /T ra n sisto rs h "7 > v C 2 4 1 2 K L t ‘* * >Planar T ;u y uNPN ~ ^S ilicon NPN Transistor hy>' > 7'* 'Expitaxial fé M fé & ^ tÌ< H ffl/L o w Freq. Noise Amp. N • i'W i v t'ìiS I/D im e n s io n s U nit : mm N F = 1 d B (Typ.) (at V ce = 6 V ,
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2SC2412KLN
2SC2412KLN
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TRANSISTOR TZ
Abstract: No abstract text available
Text: hy V > $ IMT4 /Transistors IMT4 T'T V \s — x "J K ^— ^ — JU Kx/W 7. Isolated Mini-Mold Device raWJŒii'I’iffl/H ig h Voltage Amp. W fi^& HI/Diinensions Unit : mm 1) SMT(SC-59) ¿ I rI — 2ï i £>- r h 7 > ^ * ''A o T t '- 5 o 2) S M T < O g t(lfé * iS tC < t‘J î l * A i nIfÊ
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SC-59)
TRANSISTOR TZ
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PANASONIC CE EB
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO 72 M f f lIC AN90C00 Series A N 9 0 C 0 0 Series h * 7 > ï? 7 Is <4 /Transistor I- 7 > i> X ;? 7 1-"f AN90C00 ^ ¡ I - X l i , 4 Arrays hy « 1 i -y ? £ & iit t L t z 0SS ì i / 1 U V«/ 9 IC i t L tz •>' —X o n iiX 't* 9 f > ' 7 ' 7 X f . ? } ' S I L t c . y ' r — ì; X-,
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AN90C00
AN90C00
-CICJC22
200//A
PANASONIC CE EB
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tf81
Abstract: No abstract text available
Text: • 7 0 2 0 ^ 0 0 0 Ô 2 Ü 1 357 ■ RHN -fe>'9‘/S e n s o rs RPT-38PT RPT-38PT Silicon Planar Phototransistor • íl-Jfé rfü Eil/D im en sion s Unit : mm RPT-38PT ti., -fe is -y- m t-h hy> > z$?to «an; ”"103.1 ±0.2 K SIR-38ST * h h "7 RPT-38PT represents silicon planer
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RPT-38PT
RPT-38PT
SIR-38ST
SIR-38ST)
500Lux
tf81
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smd transistor HY 30
Abstract: smd transistor HY 10
Text: TCA 505 B Revision History: Original Version 09.91 Previous Releases: TCA 505 Page Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exeeding only one of these values may cause ir reversible damage to the integrated circuit.
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P-DIP-16
P-DSO-16
smd transistor HY 30
smd transistor HY 10
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ISP824-1
Abstract: No abstract text available
Text: AC Input Photo Transistors Low Input Current 4 pin Packages fte t N u M te r : C o f ftttita m ia r m io v««<uv f M M S /a S /lm A W n {% ISP814-1 ISP814-2 ISF814-3 Two Infra-Red LEDs Connected In Inverse Parallel ISP824-1 ISP824-2 Dual Independent AC Input Isolators
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ISP814-1
ISP814-2
ISF814-3
ISP824-1
ISP824-2
ISP824-3
ISP844-1
ISP844-2
ISP844-3
EN60950
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