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    hy57v16

    Abstract: HY57V164010D-10
    Text: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    Original     		PDF HY57V164010D HY57V164010D 216-bits 152x4. 400mil 44pin hy57v16 HY57V164010D-10

    HY57V164010

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		PDF 164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010