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    HYNIX LOT DATE CODE Search Results

    HYNIX LOT DATE CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    54184J/B Rochester Electronics LLC 54184 - BCD to Binary Converters Visit Rochester Electronics LLC Buy
    74184N Rochester Electronics LLC 74184 - BCD to Binary Converters Visit Rochester Electronics LLC Buy
    74185AN Rochester Electronics LLC 74185 - Binary to BCD Converters Visit Rochester Electronics LLC Buy
    54185AJ/B Rochester Electronics LLC 54185A - Binary to BCD Converters Visit Rochester Electronics LLC Buy

    HYNIX LOT DATE CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYNIX lot date code

    Abstract: 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126
    Text: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-07 Date Issued: April 8, 2004 Product(s) Affected: PI5C3257, PI5C33X257, and PI5V330 Manufacturing Location Affected: Hynix Semiconductor, Korea Date Effective: July 8, 2004


    Original     		PI5C3257, PI5C33X257, PI5V330 200-mm HYNIX lot date code 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126 PDF

    HYNIX lot date code

    Abstract: HYNIX manufacturing code HP8110A "TSMC 0.6um" thermostream 1P2M A18-B18 TBS24 1p2m tsmc HP8116A
    Text: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-03 Date Issued: March 1, 2004 Product(s) Affected: PI5C16862C Manufacturing Location Affected: Hynix Semiconductor Date Effective: June 1, 2004 (calendar week 23, 2004).


    Original     		PI5C16862C 50pF//500W 50pF//500W, 10MHz 20MHz HYNIX lot date code HYNIX manufacturing code HP8110A "TSMC 0.6um" thermostream 1P2M A18-B18 TBS24 1p2m tsmc HP8116A PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMP532U646-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production


    Original     		HYMP532U646-E3/C4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMP564U728-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production


    Original     		HYMP564U728-E3/C4 PDF

    HYMP532U64P6-E3

    Abstract: No abstract text available
    Text: HYMP532U64P6-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production


    Original     		HYMP532U64P6-E3/C4 HYMP532U64P6-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMP564U648-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production


    Original     		HYMP564U648-E3/C4 PDF

    HYMP564U64P8-E3

    Abstract: HYmp564u64p8
    Text: HYMP564U64P8-E3/C4 SERIAL PRESENCE DETECT E3 Function described 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58~61 62 63 Number of SPD Bytes Written during Module Production


    Original     		HYMP564U64P8-E3/C4 HYMP564U64P8-E3 HYmp564u64p8 PDF

    a2030

    Abstract: 3CH100 Q030 PI3L110 PI3L301D PI3L301DA 3CH400
    Text: Date: Subject: March 15, 2006 Update Hynix CMOS 0.5 m 1P3M Wafer Fab Reliability Report - PI3L301D A total of 134 units successfully completed Dynamic High Temperature Operating Life (DHTOL) test with no failures for the PI3L301D device type. The units were tested for 3000 hours at a temperature of 150°C. This


    Original     		PI3L301D PI3L301D PI3L110, 3L500, 3L510 PI3USB10, 3USB20, 3USB40 PI3DBV10, 3DBV14, a2030 3CH100 Q030 PI3L110 PI3L301DA 3CH400 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64UD16322A 32Mbit HYUD16322A PDF

    HY62CT081

    Abstract: hy62ct081e HY62CT08081E
    Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


    Original     		HY62CT08081E 32Kx8bit HY62CT081E HY62CT08081E HY62CT081 hy62ct081e PDF

    hy62kt081e

    Abstract: HY62VT08081E-DPC
    Text: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type


    Original     		HY62K T08081E 32Kx8bit T08081 HY62vT081E HY62KT081E HY62UT081E hy62kt081e HY62VT08081E-DPC PDF

    HY64SD16162B

    Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I
    Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64SD16162B 16Mbit 16bits. HYSD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I PDF

    hy62wt081

    Abstract: HY62WT081E
    Text: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA


    Original     		HY62WT08081E 32Kx8bit HY62WT081E hy62wt081 HY62WT081E PDF

    HYUD16162B

    Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64UD16162B 16Mbit 16bits. HYUD16162B HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64LD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ‘ 01 Preliminary Oct. 06. ’ 01


    Original     		HY64LD16322M HYLD16322M PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64SD16162B 16Mbit 16bits. HYSD16162B PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01


    Original     		HY64LD16162M 100uA HYLD16162M PDF

    HYUD16162

    Abstract: HYUD16162B HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64UD16162B 16Mbit HYUD16162B HYUD16162 HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I PDF

    HYUD16162

    Abstract: HYUD16162M HY64UD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I
    Text: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’01 Preliminary 1.1 Revised Jul. 03. ’01 Preliminary Jul.18. ’01 Preliminary Oct. 07. ‘01 Preliminary


    Original     		HY64UD16162M HYUD16162M HYUD16162 HYUD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16162B- P Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		HY64UD16162B- 16Mbit HY64UD16162B HYUD16162B PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64SD16322B-DF Series Document Title 2Mx16 bit Low Low Power 1T/1C Pseudo SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jan. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any


    Original     		HY64SD16322B-DF 2Mx16 48-FBGA HYSD16322B 85-85ns PDF

    Untitled

    Abstract: No abstract text available
    Text: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01


    Original     		HY64UD16322M HYUD16322M PDF

    VL15

    Abstract: No abstract text available
    Text: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01


    Original     		HY64UD16162M 100uA HYUD16162M VL15 PDF

    494P

    Abstract: PI5C3384 BEX52 HP8110A PI5C3245 PI5C3861 Volt, SPDM, CMOS HYNIX lot date code 5C338
    Text: PCN # 02-01 DATE: January 21, 2002 TO: All Affected Pericom Customers SUBJECT: Product Change Notice PCN – Revised Die Array Type for Select 5 Volt 8-Bit Bus Switches Pericom is in the process of converting some additional 5-volt, 8-bit Bus Switch products from Chartered


    Original     		PI5C3384 10MHZ 20MHZ PI5C3384Q 494P BEX52 HP8110A PI5C3245 PI5C3861 Volt, SPDM, CMOS HYNIX lot date code 5C338 PDF