7MC-8128Z
Abstract: CFU455D2 audio squelch circuit toko 10k coil TOKO 7MC-8128Z TOKO quad coil 7MC8128Z 10.245MHz crystal TOKO 10.7MHz quadrature coil audio squelch can
Text: V 1.01 GL3361 Hynix Semiconductor Low Power Narrow Band FM IF Pin Configurations Description The GL3361 is designed for use in FM dual conversion communications equipment. This device contains an Oscillator, Mixer, Limiting Amplifier, Filter Amplifier and
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GL3361
GL3361
7MC-8128Z
220pF
245MHz
CFU455D2
audio squelch circuit
toko 10k coil
TOKO 7MC-8128Z
TOKO quad coil
7MC8128Z
10.245MHz crystal
TOKO 10.7MHz quadrature coil
audio squelch can
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4 MBIT SERIAL FLASH MEMORY HYNIX
Abstract: Hynix Semiconductor America
Text: HY29DS322/HY29DS323 32 Megabit 4M x 8/2M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS322/HY29DS323
4 MBIT SERIAL FLASH MEMORY HYNIX
Hynix Semiconductor America
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HY29LV400
Abstract: Hynix Semiconductor America
Text: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 55, 70 and 90 ns access time versions for
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HY29LV400
8/256K
HY29LV400
Hynix Semiconductor America
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Hynix Semiconductor America
Abstract: No abstract text available
Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current
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HY29F040A
Hynix Semiconductor America
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29F080
Abstract: No abstract text available
Text: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current
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HY29F080
29F080
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HY29F002T
Abstract: HY29F002
Text: HY29F002T 2 Megabit 256K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current
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HY29F002T
HY29F002T
HY29F002
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29f400 psop
Abstract: programming 29F400 0x7C00
Text: HY29F400 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F400
512Kx8/256Kx16)
29f400 psop
programming 29F400
0x7C00
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HY29F800T
Abstract: PSOP 44 Pattern HY29F800B
Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800
1Mx8/512Kx16)
HY29F800T
PSOP 44 Pattern
HY29F800B
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HY29F800ATT
Abstract: hynix 1.8 memory flash 0x78000
Text: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800A
1Mx8/512Kx16)
from55ns,
120ns
HY29F800ATT
hynix 1.8 memory flash
0x78000
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Untitled
Abstract: No abstract text available
Text: HY29F400A 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES 5 Volt Read, Program, and Erase – Minimizes system-level power requirements High Performance – Access times as fast as 50 ns Low Power Consumption – 20 mA typical active read current in byte
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HY29F400A
512Kx8/256Kx16)
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0x7E000
Abstract: HYNIX 512 Mbit HY29LV800 0X7D000
Text: HY29LV800 8 Mbit 1M x 8/512K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full
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HY29LV800
8/512K
0x7E000
HYNIX 512 Mbit
HY29LV800
0X7D000
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2746h
Abstract: k 6257 k 150MIL 300MIL HMS77C2000 HMS77C2001
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS77C2000 HMS77C2001 User’s Manual Ver. 1.1 HMS77C2000/2001 Revision History Ver 1.1 (this manual, NOV. 2002) Add IOL-VOL, IOH-VOH and VPP rising & falling time graphs in the electrical characteristics. Correct mistakes in the paragraph.
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HMS77C2000
HMS77C2001
HMS77C2000/2001
howev-921-214
2746h
k 6257 k
150MIL
300MIL
HMS77C2000
HMS77C2001
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Untitled
Abstract: No abstract text available
Text: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full
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HY29LV400
8/256K
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0x1FA000
Abstract: 0x60000 00002A2C
Text: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time
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HY29LV160
0x1FA000
0x60000
00002A2C
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4 MBIT SERIAL FLASH MEMORY HYNIX
Abstract: No abstract text available
Text: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x 16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS162/HY29DS163
4 MBIT SERIAL FLASH MEMORY HYNIX
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hynix 227e
Abstract: No abstract text available
Text: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time
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HY29LV320
128-word,
48ball
63ball
11x7mm2)
hynix 227e
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29DL162T
Abstract: 4 MBIT SERIAL FLASH MEMORY HYNIX HY29DL162 HY29DL163 HY29DL162TT HY29DL163B 0xE8000 29dl163 0x98000 0xa8000
Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
29DL162T
4 MBIT SERIAL FLASH MEMORY HYNIX
HY29DL162
HY29DL163
HY29DL162TT
HY29DL163B
0xE8000
29dl163
0x98000
0xa8000
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32 Megabit 3.0-Volt only Page Mode Flash Memory
Abstract: No abstract text available
Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
32 Megabit 3.0-Volt only Page Mode Flash Memory
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Untitled
Abstract: No abstract text available
Text: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 80, 90 and 120 ns access time versions
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HY29LV320
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voice record to SD card
Abstract: usb ccd controller ic Epson matrix ccd MX8861 specifications tv pattern generator panasonic cmos image sensor matrix CCD epson diagram sony lcd tv tv pattern generator ic schematic diagram tv sharp
Text: BRIEF MX8861 4M PIXEL MULTIMEDIA CAMERA CONTROLLER General Description The MX8861 is a highly integrated system LSI designed for a digital still camera from CIF up to 4 mega-pixels resolution. Based on a built-in powerful 32-bit RISC processor and many flexible and programmable functional
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MX8861
MX8861
32-bit
voice record to SD card
usb ccd controller ic
Epson matrix ccd
specifications tv pattern generator
panasonic cmos image sensor
matrix CCD epson
diagram sony lcd tv
tv pattern generator ic
schematic diagram tv sharp
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LCD Iphone 3G
Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
Text: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355
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TMS320DM355
LLP-16
LP5551
LLP-36
LP5552
SMD-36
LCD Iphone 3G
cd player amplifier double ic 4440
hynix lpddr2
Amphenol Connectors CATALOG
iphone camera module
Hynix Semiconductor lpddr2
samsung lpddr2
samsung* lpddr2
Rockchip
lcd touchscreen iphone 3g
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Trends And Opportunities In Semiconductor Licensing
Abstract: FinFET
Text: Semiconductor Licensing Trends Trends And Opportunities In Semiconductor Licensing By Stefan Tamme, Stephen Schott, Dogan Gunes, Jeffrey Wallace, Richard Boadway, Frank Razavi, and Marc Pépin Summary The following article examines the impact of current business, technology, and international trends
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas
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CH-9552
D-12681
SAMSUNG 4gb NAND Flash Qualification Report
ddr3 MTBF
SAMSUNG 256Mb NAND Flash Qualification Reliability
part number decoder toshiba NAND Flash MLC
DDR3 pcb layout raw card f so-dimm
nand flash socket lga 60
DDR3 sodimm pcb layout
samsung microsd card 2gb
micron DDR3 pcb layout
Hynix 32Gb Nand flash
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88E8001
Abstract: Motherboard dell optiplex gx280 88E8055 Marvell 88E8055 M5229 WD1600JS-00NCB1 marvell 88e8001 nc6000 Motherboard dell optiplex gx620 ibm thinkpad t42
Text: Intel Entry Storage System SS4000-E Tested Hardware and Operating System List Revision 1.5 October, 2006 Storage Server Group Marketing Revision History Intel® Entry Storage System SS4000-E Revision History Date Revision Number 21 Feb 2006 0.5 Modifications
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SS4000-E
BCFv11b214
toDFE-530TX
DFE-530TX
GA-7VM400AM
KT400-8235)
ALC655
VT6420
VT6102
88E8001
Motherboard dell optiplex gx280
88E8055
Marvell 88E8055
M5229
WD1600JS-00NCB1
marvell 88e8001
nc6000
Motherboard dell optiplex gx620
ibm thinkpad t42
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