GA200SA60SP
Abstract: No abstract text available
Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC
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I27235
GA200SA60SP
OT-227
OT-227
GA200SA60SP
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GA100TS60SF
Abstract: No abstract text available
Text: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending
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I27201
GA100TS60SF
08-Mar-07
GA100TS60SF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27299
GB30XF60K
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GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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I27243
GA100TS120UPbF
GA100TS120UPBF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27231 07/06 UFB200FA20P Insulated Ultrafast Rectifier Module Features • • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape
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I27231
UFB200FA20P
OT-227
UFB200FA20P
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Untitled
Abstract: No abstract text available
Text: Bulletin I27219 03/06 MT.KPbF SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio
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I27219
E78996
113MT
112MT
111MT
113MT.
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thyristor diode module IRK E78996
Abstract: IR E78996 105 IR E78996
Text: Bulletin I27215 01/07 IRK.105.PbF SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage TOTALLY LEAD-FREE
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I27215
E78996
3500VRMS
O-240AA
Al203
thyristor diode module IRK E78996
IR E78996 105
IR E78996
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E78996
Abstract: IR E78996 4000VRMS transistor and IGBT
Text: Bulletin I27220 03/06 200MT40KPbF THREE PHASE BRIDGE Power Module Features Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Low power loss 200 A Excellent power volume ratio, outline for easy connections to
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I27220
200MT40KPbF
E78996
12-Mar-07
IR E78996
4000VRMS
transistor and IGBT
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Untitled
Abstract: No abstract text available
Text: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic
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I27245
HFA120FA60P
270nC
OT-227
OT-227
HFA120EA60)
OT-227)
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Untitled
Abstract: No abstract text available
Text: Bulletin I27213 03/06 IRK.41, .56.PbF SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage TOTALLY LEAD-FREE
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I27213
E78996
3500VRMS
O-240AA
Al203
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40HF
Abstract: No abstract text available
Text: Bulletin I27268 rev. A 12/06 IRKCS203/100P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS203. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical
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I27268
IRKCS203/100P
IRKCS203.
40HF
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Diode smd code EXP
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
Diode smd code EXP
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40HF
Abstract: SCHOTTKY RECTIFIER 400A 500 va sine wave ups circuit
Text: Bulletin I27257 09/06 IRKCS401/045P SCHOTTKY RECTIFIER 400 Amp Description/ Features 1 The IRKCS401. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical
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I27257
IRKCS401/045P
IRKCS401.
40HF
SCHOTTKY RECTIFIER 400A
500 va sine wave ups circuit
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40HF
Abstract: No abstract text available
Text: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27262
IRKDS209/150P
IRKDS209.
40HF
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GA200HS60S1
Abstract: 30EPH06 tig welding machine
Text: Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package
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I27222
GA200HS60S1
GA200HS60S1
30EPH06
tig welding machine
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Untitled
Abstract: No abstract text available
Text: Bulletin I27295 12/06 IRKJS403/100P SCHOTTKY RECTIFIER 400 Amp Description/ Features The IRKJS403. Schottky rectifier Common Anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical
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I27295
IRKJS403/100P
IRKJS403.
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft
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I27299
GB30XF60K
80merchantability,
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27290 12/06 IRKCS209/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS209. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27290
IRKCS209/150P
IRKCS209.
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27262
IRKDS209/150P
IRKDS209.
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27273 02/07 CPV364M4UPbF UltraFast IGBT IGBT SIP MODULE 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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I27273
CPV364M4UPbF
360Vdc,
12-Mar-07
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94356
Abstract: No abstract text available
Text: Bulletin I27217 03/06 MT.KPbF SERIES Power Modules THREE PHASE BRIDGE Features Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio, outline for easy connections to
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I27217
E78996
60MTmerchantability,
12-Mar-07
94356
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27251 02/07 CPV362M4FPbF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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I27251
CPV362M4FPbF
360Vdc,
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin I27264 rev. A 11/06 IRKDS408/060P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKDS408. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical
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I27264
IRKDS408/060P
IRKDS408.
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27293 12/06 IRKCS201/045P SCHOTTKY RECTIFIER 200 Amp Description/ Features 1 The IRKCS201. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical
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I27293
IRKCS201/045P
IRKCS201.
12-Mar-07
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