2SD2655WM-TL-E
Abstract: RENESAS marking code package 2SB1691 2SD2655 SC-59A RENESAS mpak marking code
Text: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier REJ03G0810-0200 Previous ADE-208-1388A Rev.2.00 Aug.10.2005 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
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2SD2655
REJ03G0810-0200
ADE-208-1388A)
2SB1691
PLSP0003ZB-A
2SD2655WM-TL-E
RENESAS marking code package
2SB1691
2SD2655
SC-59A
RENESAS mpak marking code
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RH1498Mw
Abstract: LTC 809 RH1498M RH1498 MIL-PRF38535 TM1019
Text: SPEC NO. 05-08-5208 REV. B RH1498M, 10MHz, 6V / s Rail-to-Rail Input and Output precision C-load Op Amp Dice REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 04/25/06 A REMOVED NOTE #5 FROM TITLE TABLE II ELECTRICAL CHARACTERISTICS - POSTIRRADIATION, VS=5V, 3V, 50 Krads, IB, from 809 to 800 nA, PAGE 13 OF 14.
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RH1498M,
10MHz,
RH1498Mw
LTC 809
RH1498M
RH1498
MIL-PRF38535
TM1019
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2SB1691
Abstract: 2SD2655
Text: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 Previous ADE-208-1387A (Z Rev.2.00 Dec.09.2004 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)
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2SB1691
REJ03G0482-0200
ADE-208-1387A
2SD2655
dissipati-900
Unit2607
2SB1691
2SD2655
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RH1498Mw
Abstract: RH1498 LTC 809 MIL-PRF38535 TM1019
Text: SPEC NO. 05-08-5208 REV. E RH1498, 10MHz, 6V / s Rail-to-Rail Input and Output precision C-load Op Amp Dice REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 04/25/06 A REMOVED NOTE #5 FROM TITLE TABLE II ELECTRICAL CHARACTERISTICS - POSTIRRADIATION, VS=5V, 3V, 50 Krads, IB, from 809 to 800 nA, PAGE 13 OF 14.
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RH1498,
10MHz,
RH1498Mw
RH1498
LTC 809
MIL-PRF38535
TM1019
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RH1056A
Abstract: No abstract text available
Text: SPEC NO. 05-08-5019 REV. R RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION
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RH1056A,
RH1056A
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RH1056AMW
Abstract: RH1056AMH RH1056A MIL-STD-885
Text: SPEC NO. 05-08-5019 REV. S RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION
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RH1056A,
RH1056AMW
RH1056AMH
RH1056A
MIL-STD-885
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RH1056A
Abstract: RH1056AMW
Text: SPEC NO. 05-08-5019 REV. L RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 µV to 300 µV, TABLE 1, PAGE 16; RELAXATION
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RH1056A,
MIL-STD-883
MIL-STD-883.
RH1056A
RH1056AMW
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w10 jfet
Abstract: RH1056AMW RH1056A MIL-STD-885 RH1056AMH jfet application and specification
Text: SPEC NO. 05-08-5019 REV. N RH1056A, PRECISION, HIGH SPEED, JFET INPUT OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV DATE INITIAL RELEASE 06/12/96 A PAGE 18, TABLE II, DELETED VOS PARAMETER AND CHANGED +IB AND –IB DELTA LIMITS. 04/15/97 B RELAXATION OF MAX VOS AT 25°C, FROM 180 V to 300 μV, TABLE 1, PAGE 16; RELAXATION
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RH1056A,
MIL-STD-883.
w10 jfet
RH1056AMW
RH1056A
MIL-STD-885
RH1056AMH
jfet application and specification
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IDG 600
Abstract: M61880FP 20P2N-A M61880
Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.
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M61880FP
REJ03F0068-0100Z
M61880FP
IDG 600
20P2N-A
M61880
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M66515FP
Abstract: m66515 20P2N-A Laser Diode driver making ld
Text: M66515FP Laser Diode Driver/Controller REJ03F0084-0100Z Rev.1.0 Sep.22.2003 Description The M66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem
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M66515FP
REJ03F0084-0100Z
M66515
M66515FP
20P2N-A
Laser Diode driver
making ld
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M61880FP
Abstract: making ld 20P2N-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: 2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier
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2N3904
REA03G0001-0200Z
100mA
100MHz
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TD400
Abstract: 2N3904
Text: 2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier
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2N3904
REA03G0001-0200Z
100mA
100MHz
TD400
2N3904
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NPN 2n3904
Abstract: 2N3904 2N3904 Equivalent
Text: 2N3904 Silicon NPN Epitaxial General Purpose Amplifier REA03G0001-0200Z Rev.2.00 Jul.22.2004 Features • Low saturation voltage • General purpose amplifier and switching • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier
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2N3904
REA03G0001-0200Z
100mA
100MHz
NPN 2n3904
2N3904
2N3904 Equivalent
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2SC1472
Abstract: 2SC1472KATZ-E 2SC1472KBTZ-E PRSS0003DA-A SC-43A 2SC1472KB
Text: 2SC1472 K Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 3 1. Emitter 2. Collector 3. Base 2 1 3 2 1 Absolute Maximum Ratings
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2SC1472
REJ03G0688-0200
ADE-208-1054)
PRSS0003DA-A
2SC1472KATZ-E
2SC1472KBTZ-E
PRSS0003DA-A
SC-43A
2SC1472KB
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R61509V
Abstract: S695 diode
Text: Target Spec R61509V 260k-color, 240RGB x 432-dot graphics liquid crystal controller driver for Amorphous-Silicon TFT Panel REJxxxxxxx-xxxx Rev.0.11 April 25, 2008 Description . 6
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R61509V
260k-color,
240RGB
432-dot
R61509
R61509V.
R61509V
S695 diode
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Untitled
Abstract: No abstract text available
Text: 2SC458 K Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base
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2SC458
REJ03G0680-0200
ADE-208-1045)
PRSS0003DA-A
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2sc458
Abstract: 2SC458KB PRSS0003DA-A SC-43A 2SC458KCTZ-E
Text: 2SC458 K Silicon NPN Epitaxial REJ03G0680-0200 (Previous ADE-208-1045) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base
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2SC458
REJ03G0680-0200
ADE-208-1045)
PRSS0003DA-A
2SC458KB
PRSS0003DA-A
SC-43A
2SC458KCTZ-E
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Untitled
Abstract: No abstract text available
Text: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2857
200mW
14mW/Â
O-206AF)
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2SA673AKC
Abstract: 2SA673A 2SA673AKCTZ-E 2SA673AKBTZ-E 2SA673AKDTZ-E PRSS0003DA-A SC-43A
Text: 2SA673A K Silicon PNP Epitaxial REJ03G0627-0300 (Previous ADE-208-313A) Rev.3.00 Aug.10.2005 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base
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2SA673A
REJ03G0627-0300
ADE-208-313A)
PRSS0003DA-A
2SA673AKC
2SA673AKCTZ-E
2SA673AKBTZ-E
2SA673AKDTZ-E
PRSS0003DA-A
SC-43A
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Untitled
Abstract: No abstract text available
Text: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2857
200mW
14mW/Â
O-206AF)
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7406n
Abstract: 7408n 74193N 7416N 7407N 74181N 74LS01N 7438N 7437N 74h00n
Text: CYFROWE UKtADY SCALONE TTL SERII UCY 74 . /UCA 64 . Wykaz oznaczen parametrów technicznych poj'emnosc Unii statyczny wspólczynnik wzmocnienia pr^dowego w ukladzie OE "21B pr^d bazy IB IC pr^d kolektora Icc pr^d zasilania ICC+ ICC" OD 011 ICCH ICCH-*'
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QML-38535
Abstract: LTC1150MJ8
Text: REVISIONS LTR DESCRIPTION Make changes to 1.3 and Vos, table I. - ro. lio , I ib , A v o l , CMRR, PSRR, lCc DATE YR-MO-DA APPROVED 99-04-13 R. MONNIN tests as specified in REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5
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LTC1150MJ8
QML-38535
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5962-8952001YX
Abstract: No abstract text available
Text: ^crn * U.S. GOVIRNMINT PRINTINGOfFICI: 1987 — 748-129/60911 JLT O/ 5962- El 700 D IS T R IB U T IO N S T A T E M E N T A . A p p ro v e d fo r p u b lic re le a s e ; d is trib u tio n Is u n lim ite d . 1. SCOPE 1. 1 Scope. Th i s dr awi ng de s c r i b es de v i c e r equi r ement s f o r c l a s s B m i c r o c i r c u i t s i n accor dance
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5962-E1700
5962-8952001XX
LT1083MK/883
5962-8952001YX
0M183SCM/883
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